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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width | Radiation Hardening |
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  | Mfr. ТипIS43LD32128A-18BPLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LPDDR2 S4 SDRAM 4G-Bit 128M x 32 1.2V 168-Pin VFBGA (Alt: IS43LD32128A-18BPLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 168-VFBGA | YES | - | 168-VFBGA (12x12) | 168 | - | IS43LD32128 | - | INTEGRATED SILICON SOLUTION INC | IS43LD32128A-18BPLI | Volatile | ISSI, Integrated Silicon Solution Inc | - | 134217728 words | 128000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | Obsolete | NOT SPECIFIED | 5.65 | - | Yes | 1.8 V | - | -40°C ~ 85°C (TC) | - | - | - | EAR99 | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | - | 1.14V ~ 1.3V, 1.7V ~ 1.95V | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | compliant | - | S-PBGA-B168 | - | - | 1.95 V | - | INDUSTRIAL | 1.7 V | - | - | 4Gbit | 1 | - | SYNCHRONOUS | 533 MHz | - | 5.5 ns | DRAM | HSUL_12 | - | 128MX32 | - | 0.95 mm | 32 | 15ns | - | - | - | 4294967296 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 128M x 32 | 12 mm | 12 mm | - | ||
| IS43LD32128A-18BPLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16160B-5BLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (16Mx16) 400MHz DDR 2.5v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | YES | 60 | - | 60 | 0.7 ns | - | 200 MHz | INTEGRATED SILICON SOLUTION INC | IS43R16160B-5BL | - | - | - | 16777216 words | 16000000 | 70 °C | - | - | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | - | 40 | 5.64 | Compliant | Yes | 2.5 V | - | - | - | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 2.5 V | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 2.7 V | 2.3 V | 32 MB | 1 | 290 mA | SYNCHRONOUS | - | 0.29 mA | 700 ps | - | - | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | - | 15 b | 256 Mb | 0.03 A | 268435456 bit | 200 MHz | - | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 8 mm | - | ||
| IS43R16160B-5BL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16400B-5TLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 64M-Bit 4M x 16 2.5V 66-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | - | - | YES | - | - | 66 | 0.7 ns | - | 200 MHz | INTEGRATED SILICON SOLUTION INC | IS43R16400B-5TLI | - | - | - | 4194304 words | 4000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | - | - | 5.17 | - | Yes | 2.5 V | - | - | - | - | - | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | DUAL | GULL WING | - | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | - | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.22 mA | - | - | - | - | 4MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.01 A | 67108864 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
| IS43R16400B-5TLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R32800B-5BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
256M, 2.5V, DDR, 16MX16, 200MHZ, 144-BALL BGA (12MMX12MM) RO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 144 | 0.7 ns | - | - | INTEGRATED SILICON SOLUTION INC | IS43R32800B-5BLI | - | - | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, | - | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 10 | 5.66 | - | Yes | 2.5 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 144 | S-PBGA-B144 | Not Qualified | - | 2.7 V | - | INDUSTRIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | - | 8MX32 | - | 1.4 mm | 32 | - | - | - | - | 268435456 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | 12 mm | 12 mm | - | ||
| IS43R32800B-5BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16128B-3DBLA2Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V Automotive 84-Pin TW-BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.45 ns | - | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16128B-3DBLA2 | - | - | - | 134217728 words | 128000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | BGA | - | - | 5.69 | - | Yes | 1.8 V | Automotive grade | - | - | - | - | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.485 mA | - | - | - | - | 128MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.03 A | 2147483648 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.5 mm | 10.5 mm | - | ||
| IS46DR16128B-3DBLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16320B-3DBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 32Mx16, 333Mhz @ CL5, 84 ball BGA (10.5mmx13mm) RoHS, IT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.45 ns | - | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-3DBLI | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | - | 40 | 5.61 | - | Yes | 1.8 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.34 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 10.5 mm | - | ||
| IS43DR16320B-3DBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S32160F-7BLA2Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 512Mbit 16Mx32 3.3V Automotive 90-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 90 | 5.4 ns | - | - | INTEGRATED SILICON SOLUTION INC | IS45S32160F-7BLA2 | - | - | - | 16777216 words | 16000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | NOT SPECIFIED | 5.68 | - | Yes | 3.3 V | - | - | - | - | - | EAR99 | - | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | - | R-PBGA-B90 | - | - | 3.6 V | - | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | - | 16MX32 | - | 1.2 mm | 32 | - | - | - | - | 536870912 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | 13 mm | 8 mm | - | ||
| IS45S32160F-7BLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR32800A-37CBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (8Mx32) 266MHz Industrial Temp
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 126 | 0.5 ns | - | 267 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR32800A-37CBLI | - | - | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA126,12X16,32 | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 10 | 5.27 | - | Yes | 1.8 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.45 mA | - | - | - | - | 8MX32 | 3-STATE | 1.4 mm | 32 | - | - | - | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 14 mm | 11 mm | - | ||
| IS43DR32800A-37CBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42SM32400F-75BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 128M (4Mx32) 133MHz Industrial Temp
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 90 | 6 ns | - | 133 MHz | INTEGRATED SILICON SOLUTION INC | IS42SM32400F-75BLI | - | - | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | - | 40 | 5.37 | - | Yes | 3.3 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | - | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.125 mA | - | - | - | - | 4MX32 | 3-STATE | 1.2 mm | 32 | - | - | - | 0.00001 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 8 mm | - | ||
| IS42SM32400F-75BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16640A-25EBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 1G-Bit 64M x 16 1.8V 84-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | - | - | YES | - | - | 84 | 0.4 ns | - | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-25EBLI | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | - | 40 | 5.2 | - | Yes | 1.8 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.32 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.36 mA | - | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.65 mm | 8 mm | - | ||
| IS43DR16640A-25EBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16640A-25EBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO +95C),1G, 1.8V, DDR2, 64MX16, 400MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.4 ns | - | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16640A-25EBLA1-TR | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.69 | Compliant | Yes | 1.8 V | Automotive grade | - | - | - | - | - | - | 95 °C | -40 °C | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 128 MB | 1 | - | SYNCHRONOUS | - | 0.36 mA | 400 ps | - | - | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.015 A | 1073741824 bit | 400 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.65 mm | 8 mm | - | ||
| IS46DR16640A-25EBLA1-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16640A-25DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8mmx13.65mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.4 ns | - | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-25DBLI-TR | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.41 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.36 mA | - | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.65 mm | 8 mm | - | ||
| IS43DR16640A-25DBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16320B-3DBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO +95C), 512M, 1.8V, DDR2, 32MX16, 333M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.45 ns | - | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-3DBLA1-TR | - | - | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.84 | Compliant | Yes | 1.8 V | Automotive grade | - | - | e3 | Yes | - | Matte Tin (Sn) | 95 °C | -40 °C | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 64 MB | 1 | - | SYNCHRONOUS | - | 0.34 mA | 450 ps | - | - | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.008 A | 536870912 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 10.5 mm | - | ||
| IS46DR16320B-3DBLA1-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR81280ED-15HBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM with ECC 1G-Bit 128Mx8 1.5V 78-Ball FBGA (Alt: IS43TR81280ED-15HBLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 78 | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR81280ED-15HBLI | - | - | 3 | 134217728 words | 128000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | FBGA-78 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 10 | 5.61 | - | Yes | 1.5 V | - | - | - | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | - | - | 1.575 V | - | INDUSTRIAL | 1.425 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | - | 128MX8 | - | 1.2 mm | 8 | - | - | - | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | - | 10.5 mm | 8 mm | - | ||
| IS43TR81280ED-15HBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42VM32200G-75BLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 64M (2Mx32) 133MHz Mobile SDRAM 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 90 | 6 ns | - | 133 MHz | INTEGRATED SILICON SOLUTION INC | IS42VM32200G-75BLI-TR | - | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | - | - | 5.75 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | R-PBGA-B90 | Not Qualified | - | - | 1.8 V | INDUSTRIAL | - | - | - | - | - | - | - | - | 0.075 mA | - | - | - | - | 2MX32 | 3-STATE | - | 32 | - | - | - | 0.00003 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | - | ||
| IS42VM32200G-75BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16640A-3DBI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 64MX16, 333MHZ @ CL5, 84 BALL BGA (8MMX13.65
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.45 ns | - | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-3DBI-TR | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, MO-207, TWBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.92 | - | No | 1.8 V | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.35 mA | - | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.65 mm | 8 mm | - | ||
| IS43DR16640A-3DBI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R86400E-5TLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.5V/2.6V 66-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | - | 66-TSOP II | 66 | 0.7 ns | - | - | INTEGRATED SILICON SOLUTION INC | IS43R86400E-5TL | Volatile | ISSI, Integrated Silicon Solution Inc | - | 67108864 words | 64000000 | 70 °C | - | Bulk | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Active | NOT SPECIFIED | 5.59 | - | Yes | 2.5 V | - | 0°C ~ 70°C (TA) | - | - | - | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | 2.3V ~ 2.7V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PDSO-G66 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | - | - | 512Mbit | 1 | - | SYNCHRONOUS | 200 MHz | - | 700 ps | DRAM | SSTL_2 | - | 64MX8 | - | 1.2 mm | 8 | 15ns | - | - | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | 64M x 8 | 22.22 mm | 10.16 mm | - | ||
| IS43R86400E-5TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16800D-7TLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
IC Sdram 128MBIT 143MHZ 54TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 54 | 5.4 ns | - | - | INTEGRATED SILICON SOLUTION INC | IS42S16800D-7TLI-TR | - | - | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 40 | 5.07 | - | Yes | 3.3 V | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | - | 3.6 V | - | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | - | 8MX16 | - | 1.2 mm | 16 | - | - | - | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
| IS42S16800D-7TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR32801A-5BBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (8Mx32) 200MHz DDR2 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | YES | 126 | - | 126 | 0.6 ns | - | 200 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR32801A-5BBLI | - | - | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA126,12X16,32 | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 10 | 5.67 | Compliant | Yes | 1.8 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 32 MB | 1 | 210 mA | SYNCHRONOUS | - | 0.43 mA | 600 ps | - | - | 32 b | 8MX32 | 3-STATE | 1.4 mm | 32 | - | 15 b | 256 Mb | 0.008 A | 268435456 bit | 400 MHz | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 14 mm | 11 mm | No | ||
| IS43DR32801A-5BBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R32400D-4BL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 128M (4Mx32) 250MHz DDR 2.5v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43R32400D-4BL-TR | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | 5.84 | Compliant | - | - | - | - | - | - | - | - | - | 70 °C | 0 °C | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | 2.7 V | 2.3 V | 16 MB | - | - | - | - | - | 700 ps | - | - | 32 b | - | - | - | - | - | - | - | - | - | 250 MHz | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS43R32400D-4BL-TR |
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