- Все продукты
- /
- Connectors, Interconnects
- /
- Memory Connectors - Accessories
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIS43R32800B-6BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
256M, 2.5V, DDR, 16MX16, 166MHZ, 144-BALL BGA (12MMX12MM) RO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 144 | 0.7 ns | - | INTEGRATED SILICON SOLUTION INC | IS43R32800B-6BLI | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | 10 | 5.68 | - | Yes | 2.5 V | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 144 | S-PBGA-B144 | Not Qualified | 2.7 V | - | INDUSTRIAL | 2.3 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | 8MX32 | - | 1.4 mm | 32 | - | 268435456 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | 12 mm | 12 mm | ||
| IS43R32800B-6BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105B-50TIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16M 1Mx16 50ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 44 | 50 ns | - | INTEGRATED SILICON SOLUTION INC | IS41LV16105B-50TI | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.73 | - | No | 3.3 V | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | ASYNCHRONOUS | 0.16 mA | - | - | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | - | - | COMMON | FAST PAGE DRAM | 1024 | - | - | FAST PAGE | NO | 20.95 mm | 10.16 mm | ||
| IS41LV16105B-50TI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43LR32400E-6BLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 128M, 1.8V, Mobile DDR, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 90 | 5.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | IS43LR32400E-6BL | 3 | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | 40 | 5.56 | - | Yes | 1.8 V | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.09 mA | - | - | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.00003 A | 134217728 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8,16 | 2,4,8,16 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| IS43LR32400E-6BL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16128-3DBLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
2G, 1.8V, DDR2, 128Mx16, 333Mhz @ CL5, 126 ball BGA (11mmx14mm) RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16128-3DBL | - | 134217728 words | 128000000 | 70 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | 40 | 5.63 | - | Yes | 1.8 V | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.485 mA | - | - | 128MX16 | 3-STATE | 1.4 mm | 16 | 0.03 A | 2147483648 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.5 mm | 10.5 mm | ||
| IS43DR16128-3DBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS49RL18320-125EBL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip RLDRAM3 576M-Bit 32M x 18 1.35V/2.5V 168-Pin FCBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | YES | 168 | 10 ns | - | INTEGRATED SILICON SOLUTION INC | IS49RL18320-125EBL-TR | - | 33554432 words | 32000000 | 95 °C | - | PLASTIC/EPOXY | TBGA | TBGA, | - | SQUARE | GRID ARRAY, THIN PROFILE | Not Recommended | - | NOT SPECIFIED | 5.63 | - | Yes | 1.35 V | - | - | - | - | - | - | - | AUTO REFRESH | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | - | S-PBGA-B168 | - | 1.42 V | - | OTHER | 1.28 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | 32MX18 | - | 1.2 mm | 18 | - | 603979776 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | - | 13.5 mm | 13.5 mm | ||
| IS49RL18320-125EBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105B-50TAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16M 1Mx16 50ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 44 | 50 ns | - | INTEGRATED SILICON SOLUTION INC | IS41LV16105B-50T | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.77 | - | No | 3.3 V | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | 1 | ASYNCHRONOUS | 0.16 mA | - | - | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | - | - | COMMON | FAST PAGE DRAM | 1024 | - | - | FAST PAGE | NO | 20.95 mm | 10.16 mm | ||
| IS41LV16105B-50T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105B-60TAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16M 1Mx16 60ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 44 | 60 ns | - | INTEGRATED SILICON SOLUTION INC | IS41LV16105B-60T | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.77 | - | No | 3.3 V | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | 1 | ASYNCHRONOUS | 0.16 mA | - | - | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | - | - | COMMON | FAST PAGE DRAM | 1024 | - | - | FAST PAGE | NO | 20.95 mm | 10.16 mm | ||
| IS41LV16105B-60T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46LR16160G-6BLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin TFBGA T/R - Tape and Reel (Alt: IS46LR16160G-6BLA2-TR)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | YES | 60 | 5.5 ns | - | INTEGRATED SILICON SOLUTION INC | IS46LR16160G-6BLA2-TR | - | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | - | NOT SPECIFIED | 5.69 | Compliant | Yes | 1.8 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | - | 1.95 V | - | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | 16MX16 | - | 1.1 mm | 16 | - | 268435456 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | 10 mm | 8 mm | ||
| IS46LR16160G-6BLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR85120A-107MBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM 4G-Bit 512Mx8 1.5V 78-Pin TWBGA - Trays (Alt: IS43TR85120A-107MBLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | YES | 78 | 0.085 ns | - | INTEGRATED SILICON SOLUTION INC | IS43TR85120A-107MBLI | - | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | End Of Life | - | - | 5.63 | - | Yes | 1.5 V | - | - | - | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | - | 1.575 V | - | INDUSTRIAL | 1.425 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | 512MX8 | - | 1.2 mm | 8 | - | 4294967296 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 10.5 mm | 9 mm | ||
| IS43TR85120A-107MBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16640A-25DBLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 105C),1G, 1.8V, DDR2, 64MX16, 400MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS46DR16640A-25DBLA2-TR | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | 5.84 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS46DR16640A-25DBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16320B-25DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 32MX16, 400MHZ @ CL5, 84 BALL BGA (10.5MMX
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-25DBLI-TR | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.84 | - | Yes | 1.8 V | - | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.35 mA | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
| IS43DR16320B-25DBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR16640AL-15GBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.35V, DDR3, 64MX16, 1333MT/S @ 8-8-8, 96 BALL BGA (9MM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 96 | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR16640AL-15GBLI | - | 67108864 words | 64000000 | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.61 | - | - | 1.35 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B96 | - | 1.45 V | - | - | 1.283 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | 64MX16 | - | 1.2 mm | 16 | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | ||
| IS43TR16640AL-15GBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR86400B-3DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (10mmx10.5mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 60 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR86400B-3DBLI-TR | 1 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.84 | - | Yes | 1.8 V | - | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.22 mA | - | - | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 10.5 mm | 10 mm | ||
| IS43DR86400B-3DBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42VM16400G-75BLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
64M, 1.8v, Mobile SDRAM, 4Mx16, 133Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 54 | 6 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | IS42VM16400G-75BLI-TR | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | - | - | 5.75 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | S-PBGA-B54 | Not Qualified | - | 1.8 V | INDUSTRIAL | - | - | - | - | - | - | 0.075 mA | - | - | 4MX16 | 3-STATE | - | 16 | 0.00003 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | ||
| IS42VM16400G-75BLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR81280A-25EBL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 128MX8, 400MHZ @CL6, 60 BALL BGA, (8MMX 13.6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 60 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR81280A-25EBL-TR | - | 134217728 words | 128000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.49 | - | Yes | 1.8 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.31 mA | - | - | 128MX8 | 3-STATE | 1.2 mm | 8 | - | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS43DR81280A-25EBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16160A-5BBLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 16M x 16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS46DR16160A-5BBLA2-TR)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | YES | 84 | 0.6 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16160A-5BBLA2-TR | - | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.84 | - | Yes | 1.8 V | Automotive grade | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.21 mA | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||
| IS46DR16160A-5BBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR86400B-3DBL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 64MX8, 333MHZ @ CL5, 60 BALL BGA (10MMX10.
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 60 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR86400B-3DBL-TR | 1 | 67108864 words | 64000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.84 | - | Yes | 1.8 V | - | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.22 mA | - | - | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 10.5 mm | 10 mm | ||
| IS43DR86400B-3DBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR32801A-37CBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
256M, 1.8V, DDR2, Reduced Page, 8MX32, 267MHZ @ CL4, 126 Bal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 126 | 0.5 ns | 267 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR32801A-37CBLI | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA126,12X16,32 | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | 10 | 5.25 | - | Yes | 1.8 V | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.45 mA | - | - | 8MX32 | 3-STATE | 1.4 mm | 32 | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 11 mm | ||
| IS43DR32801A-37CBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16160A-37CBA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 16M x 16 1.8V 84-Pin TWBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | YES | 84 | 0.5 ns | 266 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16160A-37CBA1-TR | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.92 | Non-Compliant | No | 1.8 V | Automotive grade | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | 0.27 mA | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||
| IS46DR16160A-37CBA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16640A-3DBLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 105C),1G, 1.8V, DDR2, 64MX16, 333MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 84 | 0.4 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16640A-3DBLA2-TR | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.69 | Compliant | Yes | 1.8 V | Automotive grade | - | - | - | - | 105 °C | -40 °C | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 128 MB | 1 | SYNCHRONOUS | 0.35 mA | 450 ps | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS46DR16640A-3DBLA2-TR |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ