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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer Part Number | Maximum Clock Rate | Memory Types | Mfr | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Memory Organization | Length | Width |
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  | Mfr. ТипIS43R16400B-6TLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
64M, 2.5V, DDR, 4Mx16, 166MHz, 66 pin TSOP II (400 mil) RoHS,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | - | - | YES | - | - | 66 | 0.7 ns | - | 166 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43R16400B-6TL | - | - | - | - | - | - | 4194304 words | 4000000 | 70 °C | - | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | - | - | 5.43 | - | Yes | - | 2.5 V | - | - | - | - | - | EAR99 | - | - | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | DUAL | GULL WING | - | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | - | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.2 mA | - | - | - | - | 4MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.01 A | 67108864 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
| IS43R16400B-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16400B-5TLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 64M-Bit 4M X 16 2.5V 66-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | - | - | YES | - | - | 66 | 0.7 ns | - | 200 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43R16400B-5TL | - | - | - | - | - | - | 4194304 words | 4000000 | 70 °C | - | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | - | - | 5.19 | - | Yes | - | 2.5 V | - | - | - | - | - | EAR99 | - | - | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | DUAL | GULL WING | - | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | - | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.22 mA | - | - | - | - | 4MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.01 A | 67108864 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
| IS43R16400B-5TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR32801A-5BBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (8Mx32) 200MHz DDR2 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 126 | 0.6 ns | - | 200 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR32801A-5BBLI-TR | - | - | - | - | - | - | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | FBGA | - | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | - | 5.84 | - | Yes | - | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | R-PBGA-B126 | Not Qualified | - | - | 1.8 V | INDUSTRIAL | - | - | - | - | - | - | - | - | 0.43 mA | - | - | - | - | 8MX32 | 3-STATE | - | 32 | - | - | - | - | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | - | - | - | - | - | - | ||
| IS43DR32801A-5BBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16320B-37CBLA2Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 512M (32Mx16) 267MHz DDR2 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.5 ns | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-37CBLA2 | - | - | - | - | - | - | 33554432 words | 32000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | - | - | 5.64 | - | Yes | - | 1.8 V | Automotive grade | - | - | - | - | EAR99 | - | - | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.335 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.008 A | 536870912 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | 13 mm | 10.5 mm | ||
| IS46DR16320B-37CBLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42VM32100C-75BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LP SDRAM 32M-Bit 1M x 32 1.8V 90-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 90 | 6 ns | - | 133 MHz | - | INTEGRATED SILICON SOLUTION INC | IS42VM32100C-75BLI | - | - | - | 3 | - | - | 1048576 words | 1000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 40 | 5.56 | - | Yes | - | 1.8 V | - | - | - | e1 | Yes | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | - | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.07 mA | - | - | - | - | 1MX32 | 3-STATE | 1.2 mm | 32 | - | - | - | - | 0.00001 A | 33554432 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | - | - | 13 mm | 8 mm | ||
| IS42VM32100C-75BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16160D-6BIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 256M-Bit 16M x 16 3.3V 54-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | Surface Mount | - | - | YES | 54 | - | 54 | 5.4 ns | - | 166 MHz | - | INTEGRATED SILICON SOLUTION INC | IS42S16160D-6BI | - | - | - | 3 | - | - | 16777216 words | 16000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | 13 X 8 MM, 0.80 MM PITCH, MS-207, TFBGA-54 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | - | NOT SPECIFIED | 5.28 | Non-Compliant | No | - | 3.3 V | - | - | - | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.24 | - | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PBGA-B54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 3.6 V | 3 V | 32 MB | 1 | 180 mA | SYNCHRONOUS | - | 0.18 mA | 5.4 ns | - | - | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | - | 15 b | - | 256 Mb | 0.003 A | 268435456 bit | 166 MHz | - | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 13 mm | 8 mm | ||
| IS42S16160D-6BI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16320B-37CBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 95C), 512M, 1.8V, DDR2, 32MX16, 267M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.5 ns | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-37CBLA1-TR | - | - | - | 1 | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.84 | Compliant | Yes | - | 1.8 V | Automotive grade | - | - | e3 | Yes | - | - | Matte Tin (Sn) | 95 °C | -40 °C | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 64 MB | 1 | - | SYNCHRONOUS | - | 0.335 mA | 500 ps | - | - | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.008 A | 536870912 bit | 266 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | 13 mm | 10.5 mm | ||
| IS46DR16320B-37CBLA1-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R83200B-6TLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (32Mx8) 333MHz DDR 2.5v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43R83200B-6TLI-TR | - | - | - | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | 5.84 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS43R83200B-6TLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42SM16200C-6BLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LP SDRAM 32M-Bit 2M x 16 3.3V 54-Pin TFBGA T/R - Tape and Reel (Alt: IS42SM16200C-6BLI-TR)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 54 | 5.5 ns | - | 166 MHz | - | INTEGRATED SILICON SOLUTION INC | IS42SM16200C-6BLI-TR | - | - | - | 1 | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.84 | - | Yes | - | 3.3 V | - | - | - | e3 | Yes | - | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | S-PBGA-B54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 2.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.06 mA | - | - | - | - | 2MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.00001 A | 33554432 bit | - | - | COMMON | CACHE DRAM MODULE | 4096 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | - | - | 8 mm | 8 mm | ||
| IS42SM16200C-6BLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR83200A-3DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 32M x 8 1.8V 60-Pin TWBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 60 | 0.45 ns | - | 333 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR83200A-3DBLI-TR | - | - | - | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.84 | - | Yes | - | 1.8 V | - | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.33 mA | - | - | - | - | 32MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | 0.005 A | 268435456 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | 10.5 mm | 8 mm | ||
| IS43DR83200A-3DBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46LQ32128A-062BLA2Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128MX32, 1600MHZ, 200 BALL BGA (10Mm x 14.5MM) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Surface Mount | 200-WFBGA | YES | - | 200-VFBGA (10x14.5) | 200 | - | ISSI | - | 136 | INTEGRATED SILICON SOLUTION INC | IS46LQ32128A-062BLA2 | - | Volatile | ISSI, Integrated Silicon Solution Inc | - | - | - | 134217728 words | 128000000 | 105 °C | -40 °C | Bulk | PLASTIC/EPOXY | VFBGA | FBGA-200 | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | Active | - | 5.61 | Details | Yes | - | - | - | -40°C ~ 105°C (TC) | Automotive, AEC-Q100 | - | - | - | - | - | - | - | TERM PITCH-MAX | - | Memory & Data Storage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B200 | - | - | 1.95 V | - | INDUSTRIAL | 1.7 V | - | - | 4Gbit | 1 | - | SYNCHRONOUS | 1.6 GHz | - | 3.5 ns | DRAM | LVSTL | - | 128MX32 | - | 0.8 mm | 32 | 18ns | - | DRAM | - | - | 4294967296 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | - | DRAM | 128M x 32 | 14.5 mm | 10 mm | ||
| IS46LQ32128A-062BLA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16320E-5TL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 2.5V, Ddr 32Mx16, 200Mhz, 66 Pin Tsop Ii (400 Mil) Rohs, T&
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | - | 66-TSOP II | 66 | 0.7 ns | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43R16320E-5TL-TR | 200 MHz | Volatile | ISSI, Integrated Silicon Solution Inc | - | Surface Mount | 16 Bit | 33554432 words | 32000000 | 70 °C | - | Tape & Reel (TR) | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Active | NOT SPECIFIED | 4.72 | Compliant | Yes | TSOP-II | 2.5 V | Commercial grade | 0 to 70 °C | - | - | - | - | DDR SDRAM | - | 70 °C | 0 °C | AUTO/SELF REFRESH | - | - | 2.3V ~ 2.7V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | - | 2.5, 2.6 V | 2.7 V | - | COMMERCIAL | 2.3 V | - | - | 512Mbit | 1 | - | SYNCHRONOUS | 200 MHz | - | 700 ps | DRAM | SSTL_2 | 16 Bit | 32MX16 | - | 1.2 mm | 16 | 15ns | 13 Bit | - | 512 Mbit | - | 536870912 bit | 200 MHz | Commercial | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | 32M x 16 | 22.22 mm | 10.16 mm | ||
| IS43R16320E-5TL-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR82560A-15HBLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM 2G-Bit 256M X 8 1.5V 78-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | Surface Mount | - | - | YES | 78 | - | 78 | 13.125 ns | - | 667 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43TR82560A-15HBL | - | - | - | - | - | - | 268435456 words | 256000000 | 95 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | - | 5.6 | Compliant | Yes | - | 1.5 V | - | - | - | - | - | EAR99 | - | - | 95 °C | 0 °C | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.36 | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | Not Qualified | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | - | 1 | 140 mA | SYNCHRONOUS | - | 0.245 mA | 20 ns | - | - | - | 256MX8 | 3-STATE | 1.2 mm | 8 | - | 18 b | - | 2 Gb | 0.014 A | 2147483648 bit | 1.333 GHz | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | - | 10.5 mm | 9 mm | ||
| IS43TR82560A-15HBL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16320B-37CBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 32MX16, 267MHZ @ CL4, 84 BALL BGA (10.5MMX
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.5 ns | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-37CBLI-TR | - | - | - | 1 | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.83 | - | Yes | - | 1.8 V | - | - | - | e3 | Yes | - | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.335 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | 13 mm | 10.5 mm | ||
| IS43DR16320B-37CBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16320B-7CTNA1Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
Automotive (-40 to 85C), 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin TSOP II RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 54 | 6 ns | - | 143 MHz | - | INTEGRATED SILICON SOLUTION INC | IS45S16320B-7CTNA1 | - | - | - | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | NOT SPECIFIED | 5.38 | - | Yes | - | 3.3 V | Automotive grade | - | - | e4 | - | EAR99 | - | - | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | - | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.3 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.004 A | 536870912 bit | - | AEC-Q100 | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
| IS45S16320B-7CTNA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16800CC-6TLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 66 | 0.7 ns | - | 166 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43R16800CC-6TL | - | - | - | 3 | - | - | 8388608 words | 8000000 | 70 °C | - | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 40 | 5.13 | - | Yes | - | 2.5 V | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | - | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.25 mA | - | - | - | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.025 A | 134217728 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
| IS43R16800CC-6TL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR82560AL-15HBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3L SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 78 | 0.255 ns | - | 667 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43TR82560AL-15HBLI | - | - | - | - | - | - | 268435456 words | 256000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.6 | - | Yes | - | 1.35 V | - | - | - | - | - | - | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | Not Qualified | - | 1.45 V | 1.35 V | INDUSTRIAL | 1.283 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.24 mA | - | - | - | - | 256MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | 0.014 A | 2147483648 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | - | 10.5 mm | 8 mm | ||
| IS43TR82560AL-15HBLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43LD16320A-3BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LPDDR2 S4 SDRAM 512M-Bit 32M x 16 1.2V 134-Pin TFBGA - Bulk (Alt: IS43LD16320A-3BLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 134 | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43LD16320A-3BLI | - | - | - | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | NOT SPECIFIED | 5.7 | - | Yes | - | 1.2 V | - | - | - | e1 | - | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY | - | - | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PBGA-B134 | - | - | 1.3 V | - | INDUSTRIAL | 1.14 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | - | 32MX16 | - | 1.1 mm | 16 | - | - | - | - | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | - | 11.5 mm | 10 mm | ||
| IS43LD16320A-3BLI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR83200A-37CBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
256M, 1.8V, DDR2, 32Mx8, 267Mhz @ CL4, 60 ball BGA (8mmx10.5mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 60 | 0.5 ns | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR83200A-37CBLI-TR | - | - | - | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.84 | Compliant | Yes | - | 1.8 V | - | - | - | - | - | - | - | - | 85 °C | -40 °C | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 32 MB | 1 | - | SYNCHRONOUS | - | 0.27 mA | 500 ps | - | - | 8 b | 32MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | 0.005 A | 268435456 bit | 266 MHz | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | 10.5 mm | 8 mm | ||
| IS43DR83200A-37CBLI-TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16800E-7CTNA2Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 128M-Bit 8M x 16 3.3V 54-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | - | - | YES | - | - | 54 | 5.4 ns | - | 143 MHz | - | INTEGRATED SILICON SOLUTION INC | IS45S16800E-7CTNA2 | - | - | - | 3 | - | - | 8388608 words | 8000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 10 | 5.66 | - | Yes | - | 3.3 V | - | - | - | e4 | Yes | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.16 mA | - | - | - | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.001 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
| IS45S16800E-7CTNA2 |
Индекс :
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