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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width |
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  | Mfr. ТипIS43DR16640A-25DBL-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 64MX16, 400MHZ @ CL5, 84 BALL BGA (8MMX13.65
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-25DBL-TR | - | - | - | 67108864 words | 64000000 | 70 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.42 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.36 mA | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 13.65 mm | 8 mm | ||
| IS43DR16640A-25DBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR81280AL-15GBLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3L SDRAM 1G-Bit 128M x 8 1.35V 78-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | - | - | YES | - | - | 78 | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR81280AL-15GBL | - | - | - | 134217728 words | 128000000 | - | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.61 | - | Yes | 1.35 V | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | - | - | 1.45 V | - | - | 1.283 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | 128MX8 | - | 1.2 mm | 8 | - | - | - | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | - | 10.5 mm | 8 mm | ||
| IS43TR81280AL-15GBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46LD32640B-18BLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LPDDR2 S4 SDRAM 2G-Bit 64M X 32 1.2V 134-Pin TFBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 134-TFBGA | YES | - | 134-TFBGA (10x11.5) | 134 | - | - | INTEGRATED SILICON SOLUTION INC | IS46LD32640B-18BLA2-TR | Volatile | ISSI, Integrated Silicon Solution Inc | - | 67108864 words | 64000000 | 105 °C | -40 °C | Bulk | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Last Time Buy | NOT SPECIFIED | 5.64 | - | Yes | 1.2 V | - | -40°C ~ 105°C (TC) | - | - | - | - | - | - | - | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | - | 1.14V ~ 1.3V, 1.7V ~ 1.95V | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PBGA-B134 | - | - | 1.3 V | - | INDUSTRIAL | 1.14 V | - | - | 2Gbit | 1 | - | SYNCHRONOUS | 533 MHz | - | 5.5 ns | DRAM | HSUL_12 | 64MX32 | - | 1.1 mm | 32 | 15ns | - | - | - | 2147483648 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 64M x 32 | 11.5 mm | 10 mm | ||
| IS46LD32640B-18BLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16800D-7BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
IC Sdram 128MBIT 143MHZ 54BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | IS42S16800D-7BLI | - | - | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 40 | 5.58 | - | Yes | 3.3 V | - | - | - | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.13 mA | - | - | - | 8MX16 | 3-STATE | 1 mm | 16 | - | - | - | 0.001 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 8 mm | ||
| IS42S16800D-7BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR32800A-37CBLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (8Mx32) 266MHz Commercial Temp
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 126 | 0.5 ns | 267 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR32800A-37CBL | - | - | 3 | 8388608 words | 8000000 | 70 °C | - | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA126,12X16,32 | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 10 | 5.29 | - | Yes | 1.8 V | - | - | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | Not Qualified | - | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.45 mA | - | - | - | 8MX32 | 3-STATE | 1.4 mm | 32 | - | - | - | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 14 mm | 11 mm | ||
| IS43DR32800A-37CBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR82560A-15HBLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM 2G-Bit 256M X 8 1.5V 78-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | Surface Mount | - | - | YES | 78 | - | 78 | 13.125 ns | 667 MHz | INTEGRATED SILICON SOLUTION INC | IS43TR82560A-15HBL | - | - | - | 268435456 words | 256000000 | 95 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | - | 5.6 | Compliant | Yes | 1.5 V | - | - | - | - | - | EAR99 | - | 95 °C | 0 °C | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.36 | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | Not Qualified | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | - | 1 | 140 mA | SYNCHRONOUS | - | 0.245 mA | 20 ns | - | - | 256MX8 | 3-STATE | 1.2 mm | 8 | - | 18 b | 2 Gb | 0.014 A | 2147483648 bit | 1.333 GHz | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 10.5 mm | 9 mm | ||
| IS43TR82560A-15HBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16320B-37CBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 32MX16, 267MHZ @ CL4, 84 BALL BGA (10.5MMX
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 84 | 0.5 ns | 266 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-37CBLI-TR | - | - | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.83 | - | Yes | 1.8 V | - | - | - | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.335 mA | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | 13 mm | 10.5 mm | ||
| IS43DR16320B-37CBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16320B-7CTNA1Anlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
Automotive (-40 to 85C), 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin TSOP II RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 54 | 6 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | IS45S16320B-7CTNA1 | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | NOT SPECIFIED | 5.38 | - | Yes | 3.3 V | Automotive grade | - | - | e4 | - | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.3 mA | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.004 A | 536870912 bit | - | AEC-Q100 | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | ||
| IS45S16320B-7CTNA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16800CC-6TLAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 66 | 0.7 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | IS43R16800CC-6TL | - | - | 3 | 8388608 words | 8000000 | 70 °C | - | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 40 | 5.13 | - | Yes | 2.5 V | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | - | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.25 mA | - | - | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.025 A | 134217728 bit | - | - | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | ||
| IS43R16800CC-6TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR82560AL-15HBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3L SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TWBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | - | 78 | 0.255 ns | 667 MHz | INTEGRATED SILICON SOLUTION INC | IS43TR82560AL-15HBLI | - | - | - | 268435456 words | 256000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.6 | - | Yes | 1.35 V | - | - | - | - | - | - | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | Not Qualified | - | 1.45 V | 1.35 V | INDUSTRIAL | 1.283 V | - | - | - | 1 | - | SYNCHRONOUS | - | 0.24 mA | - | - | - | 256MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | 0.014 A | 2147483648 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 10.5 mm | 8 mm | ||
| IS43TR82560AL-15HBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43LD16320A-3BLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip Mobile LPDDR2 S4 SDRAM 512M-Bit 32M x 16 1.2V 134-Pin TFBGA - Bulk (Alt: IS43LD16320A-3BLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | 134 | - | - | INTEGRATED SILICON SOLUTION INC | IS43LD16320A-3BLI | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | NOT SPECIFIED | 5.7 | - | Yes | 1.2 V | - | - | - | e1 | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY | - | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PBGA-B134 | - | - | 1.3 V | - | INDUSTRIAL | 1.14 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | - | 32MX16 | - | 1.1 mm | 16 | - | - | - | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | 11.5 mm | 10 mm | ||
| IS43LD16320A-3BLI |
Индекс :
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