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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer Part Number | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Programming Voltage | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипNAND01GR3B2BZA6EAnlielectronics Тип | STMicroelectronics |
IC FLASH 1G PARALLEL 63VFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 63 | 30 ns | MICRON TECHNOLOGY INC | NAND01GR3B2BZA6E | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.83 | Yes | 1.8 V | e1 | Yes | 3A991.B.1.A | SLC NAND TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 63 | R-PBGA-B63 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.015 mA | 128MX8 | 1.05 mm | 8 | 0.00005 A | 1073741824 bit | PARALLEL | FLASH | 1.8 V | - | NO | NO | YES | 1K | 128K | 2K words | YES | - | - | 12 mm | 9.5 mm | ||
| NAND01GR3B2BZA6E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM29W640DB90N6FAnlielectronics Тип | STMicroelectronics |
NOR Flash STD FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 48 | 90 ns | STMICROELECTRONICS | M29W640DB90N6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 30 | 5.09 | Yes | 3 V | e3/e6 | - | 3A991.B.1.A | NOR TYPE | TIN/TIN BISMUTH | BOTTOM BOOT BLOCK | 8542.32.00.51 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.0001 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | - | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||
| M29W640DB90N6F |
Индекс :
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