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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mount | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Resistance | Max Operating Temperature | Min Operating Temperature | Composition | Power (Watts) | Additional Feature | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Failure Rate | Configuration | Operating Mode | Transistor Application | Rise Time | Polarity/Channel Type | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Features | Height Seated (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипLP8314DT1AGAnlielectronics Тип | Leshan |
30V P-CHANNEL (D-S) MOSFET DFN3030-8B (Alt: LP8314DT1AG)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| LP8314DT1AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипLN237N3T5GAnlielectronics Тип | Leshan |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Axial | - | Axial | - | - | - | LESHAN RADIO CO LTD | LRC Leshan Radio Co Ltd | LN237N3T5G | - | - | - | - | , | - | - | Contact Manufacturer | NOT SPECIFIED | 5.76 | - | Yes | -55°C ~ 175°C | Tape & Reel (TR) | CMF | 0.090 Dia x 0.240 L (2.29mm x 6.10mm) | ±0.1% | Active | 2 | - | ±25ppm/°C | 243 kOhms | - | - | Metal Film | 0.5W, 1/2W | - | - | - | - | NOT SPECIFIED | unknown | - | - | -- | - | - | - | - | - | - | - | - | - | - | - | - | - | Flame Retardant Coating, Moisture Resistant, Safety | -- | ||
| LN237N3T5G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипLN2502LT1GAnlielectronics Тип | Leshan |
SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 3 | SILICON | 4.2 A | LESHAN RADIO CO LTD | LRC Leshan Radio Co Ltd | LN2502LT1G | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | 5.65 | - | Yes | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | ULTRA LOW RESISTANCE | FET General Purpose Power | DUAL | GULL WING | - | unknown | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | TO-236AB | - | 4.2 A | 0.04 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| LN2502LT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипLN4501LT1GAnlielectronics Тип | Leshan |
SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 3 | SILICON | 3.2 A | LESHAN RADIO CO LTD | LRC Leshan Radio Co Ltd | LN4501LT1G | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | NOT SPECIFIED | 5.65 | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FET General Purpose Power | DUAL | GULL WING | NOT SPECIFIED | unknown | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | - | N-CHANNEL | - | TO-236AB | - | 3.2 A | 0.08 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | 1.25 W | - | - | ||
| LN4501LT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипL2N7002KWT1GAnlielectronics Тип | Leshan |
Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | - | YES | - | 3 | SILICON | 0.32 A | LESHAN RADIO CO LTD | LRC Leshan Radio Co Ltd | L2N7002KWT1G | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | NOT SPECIFIED | 5.56 | Yes | Yes | - | - | - | - | - | - | - | EAR99 | - | - | 150 °C | -55 °C | - | - | - | - | DUAL | GULL WING | NOT SPECIFIED | unknown | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | 3.4 ns | N-CHANNEL | 320 mA | - | 20 V | - | 2.3 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| L2N7002KWT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипLP9435LT1GAnlielectronics Тип | Leshan |
Fet 5.3A 30V 3PIN SOT-23 P-channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | - | YES | - | - | - | - | LESHAN RADIO CO LTD | LRC Leshan Radio Co Ltd | LP9435LT1G | - | 150 °C | - | - | , | - | - | Contact Manufacturer | - | 5.68 | Compliant | Yes | - | - | - | - | - | - | - | EAR99 | - | - | 150 °C | -55 °C | - | - | - | Other Transistors | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | Single | - | - | 15 ns | P-CHANNEL | 5.3 A | - | 20 V | 5.3 A | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | ||
| LP9435LT1G |
Индекс :
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