| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипHY628100BLLG-70IAnlielectronics Тип | SK Hynix Inc |
Description: Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, SOP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | 70 ns | - | SK HYNIX INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | 5 V | - | - | EAR99 | - | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 3.048 mm | 8 | - | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 20.498 mm | 11.2015 mm | ||
| HY628100BLLG-70I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V641620HGT-SAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 6 ns | 100 MHz | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 4MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 67108864 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.23 mm | 10.16 mm | ||
| HY57V641620HGT-S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5DU2562GFR-K3IAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.75 ns | 133 MHz | SK HYNIX INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.2 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.003 A | 268435456 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 8 mm | ||
| H5DU2562GFR-K3I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGM71V18163CLT-7Anlielectronics Тип | SK Hynix Inc |
Description: EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | 70 ns | - | SK HYNIX INC | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 50 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | - | 1MX16 | - | 1.2 mm | 16 | - | 16777216 bit | - | - | EDO DRAM | - | - | - | - | FAST PAGE WITH EDO | - | - | 20.95 mm | 10.16 mm | ||
| GM71V18163CLT-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY5V26CLF-HAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 3.3 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 54 | R-PBGA-B54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.22 mA | 8MX16 | 3-STATE | 1.18 mm | 16 | 0.001 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 10.5 mm | 8.3 mm | ||
| HY5V26CLF-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY5DU121622CLTP-JIAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 66 | 0.7 ns | 166 MHz | SK HYNIX INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 2.5 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | - | 32MX16 | 3-STATE | 1.194 mm | 16 | 0.01 A | 536870912 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.225 mm | 10.16 mm | ||
| HY5DU121622CLTP-JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V121620T-HAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.3 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 536870912 bit | - | COMMON | SYNCHRONOUS DRAM | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| HY57V121620T-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5DU2562GFR-E3LAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.7 ns | 200 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.004 A | 268435456 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 8 mm | ||
| H5DU2562GFR-E3L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5TQ8G83BMR-RDCAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 78 | - | - | SK HYNIX INC | 1073741824 words | 1000000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | - | R-PBGA-B78 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 1GX8 | - | 1.2 mm | 8 | - | 8589934592 bit | - | COMMON | DDR3 DRAM | - | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | NO | YES | 11.1 mm | 9 mm | ||
| H5TQ8G83BMR-RDC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V281620FTP-7Anlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.19 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.238 mm | 10.16 mm | ||
| HY57V281620FTP-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V561620CLTP-HAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | Yes | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.22 mA | 16MX16 | 3-STATE | 1.194 mm | 16 | 0.001 A | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.238 mm | 10.16 mm | ||
| HY57V561620CLTP-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5PS1G83EFR-S5Anlielectronics Тип | SK Hynix Inc |
Description: DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.4 ns | 400 MHz | SK HYNIX INC | 134217728 words | 128000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | - | 1073741824 bit | - | COMMON | DDR2 DRAM | - | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | - | YES | 11.4 mm | 8 mm | ||
| H5PS1G83EFR-S5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5DU5162EFR-E3IAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.7 ns | 200 MHz | SK HYNIX INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 32MX16 | 3-STATE | 1 mm | 16 | 0.005 A | 536870912 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 8 mm | ||
| H5DU5162EFR-E3I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V28820AT-SAnlielectronics Тип | SK Hynix Inc |
Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 6 ns | 100 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.2 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| HY57V28820AT-S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5AN4G6NBJR-UHIAnlielectronics Тип | SK Hynix Inc |
DDR DRAM,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 96 | - | - | SK HYNIX INC | 268435456 words | 256000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 1.2 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | - | R-PBGA-B96 | - | 1.26 V | INDUSTRIAL | 1.14 V | 1 | SYNCHRONOUS | - | 256MX16 | - | 1.2 mm | 16 | - | 4294967296 bit | - | - | DDR4 DRAM | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 13 mm | 7.5 mm | ||
| H5AN4G6NBJR-UHI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY57V281620FTP-7IAnlielectronics Тип | SK Hynix Inc |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | Yes | 3.3 V | - | - | EAR99 | - | - | 8542.32.00.02 | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | INDUSTRIAL | - | - | - | 0.19 mA | 8MX16 | 3-STATE | - | 16 | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | ||
| HY57V281620FTP-7I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY5DU283222BF-25Anlielectronics Тип | SK Hynix Inc |
DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 144 | 0.6 ns | 400 MHz | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | 2.5 V | e0 | - | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 144 | S-PBGA-B144 | Not Qualified | 2.7 V | COMMERCIAL | 2.375 V | 1 | SYNCHRONOUS | 0.7 mA | 4MX32 | 3-STATE | 1.3 mm | 32 | 0.05 A | 134217728 bit | - | COMMON | DDR1 DRAM | - | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 12 mm | ||
| HY5DU283222BF-25 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY62V8200LLST-85IAnlielectronics Тип | SK Hynix Inc |
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | 85 ns | - | SK HYNIX INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | - | 3.3 V | e6 | - | 3A991.B.2.A | TIN BISMUTH | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 0.5 mm | compliant | - | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | ASYNCHRONOUS | - | 256KX8 | - | 1.2 mm | 8 | - | 2097152 bit | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | 11.8 mm | 8 mm | ||
| HY62V8200LLST-85I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHY5RS573225AFP-11Anlielectronics Тип | SK Hynix Inc |
DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 136 | 0.25 ns | 909 MHz | SK HYNIX INC | 8388608 words | 8000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA136,12X17,32 | BGA136,12X17,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 2.2 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 136 | R-PBGA-B136 | Not Qualified | 2.3 V | OTHER | 2.1 V | 1 | SYNCHRONOUS | - | 8MX32 | 3-STATE | 1.2 mm | 32 | - | 268435456 bit | - | COMMON | DDR3 DRAM | - | 4096 | 4,8 | 4,8 | FOUR BANK PAGE BURST | - | YES | 14 mm | 11 mm | ||
| HY5RS573225AFP-11 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH5PS5182FFP-Y5Anlielectronics Тип | SK Hynix Inc |
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.45 ns | 333 MHz | SK HYNIX INC | 67108864 words | 64000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.165 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | - | COMMON | DDR2 DRAM | - | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | - | YES | 10.5 mm | 10 mm | ||
| H5PS5182FFP-Y5 |
Индекс :
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