[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Package / Case Surface Mount Number of Terminals Access Time-Max Brand Clock Frequency-Max (fCLK) Data Rate Architecture Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Interface Type Manufacturer Manufacturer Part Number Maximum Clock Frequency Maximum Clock Rate Maximum Operating Supply Voltage Maximum Operating Temperature Memory Types Minimum Operating Supply Voltage Minimum Operating Temperature Moisture Sensitive Moisture Sensitivity Levels Mounting Mounting Styles Number of I/O Lines Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Supplier Package Supply Voltage-Max Supply Voltage-Min Supply Voltage-Nom (Vsup) Timing Type Tradename Typical Operating Supply Voltage Usage Level Operating Temperature Packaging Series JESD-609 Code Pbfree Code ECCN Code Type Terminal Finish Additional Feature HTS Code Subcategory Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Power Supplies Temperature Grade Supply Voltage-Min (Vsup) Memory Size Number of Ports Operating Mode Supply Current-Max Access Time Architecture Organization Output Characteristics Seated Height-Max Memory Width Address Bus Width Product Type Density Standby Current-Max Memory Density Screening Level Parallel/Serial I/O Type Memory IC Type Standby Voltage-Min Product Category Length Width
GSI Technology GS816236DGB-400
Mfr. Тип
GS816236DGB-400
Anlielectronics Тип

GSI Technology
Cache SRAM, 512KX36, 4ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - BGA-119 - - - GSI Technology - - 21 - Parallel GSI Technology - 400 MHz 250@Flow-Through/400@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes - - SMD/SMT 36 Bit - - - - - - - - - - - - - - Details - FBGA 3.6 V 2.3 V - Synchronous SyncBurst 2.5, 3.3 V - 0 to 85 °C Tray GS816236DGB - - - Pipeline/Flow Through - - - Memory & Data Storage - - - - - - - 119 - - - - - - 18 Mbit - - 280 mA, 365 mA 4@Flow-Through/2.5@P - 512 k x 36 - - - 19 Bit SRAM - - 18 - - - - - SRAM - -
    GS816236DGB-400
    GS816236DGB-400

    GSI Technology
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    GSI Technology GS8672D19BE-450I
    Mfr. Тип
    GS8672D19BE-450I
    Anlielectronics Тип

    		GSI Technology
    Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FPBGA-165
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - BGA-165 - - - GSI Technology - - 15 - Parallel GSI Technology - 450 MHz - - + 85 C QDR-II - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - - - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - Tray GS8672D19BE - - - SigmaQuad-II+ - - - Memory & Data Storage - - - - - - - - - - - - - - 72 Mbit - - 1.51 A - - 4 M x 18 - - - - SRAM - - 72 - - - - - SRAM - -
      GS8672D19BE-450I
      GS8672D19BE-450I

      GSI Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      GSI Technology GS8161Z36DGD-150V
      Mfr. Тип
      GS8161Z36DGD-150V
      Anlielectronics Тип

      		GSI Technology
      ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 10 Weeks BGA-165 YES 165 7.5 ns GSI Technology - SDR 18 GSI TECHNOLOGY Parallel GSI Technology GS8161Z36DGD-150V 150 MHz - 2, 2.7 V + 70 C SDR 1.7, 2.3 V 0 C Yes - Surface Mount SMD/SMT 36 Bit 512 kWords 512000 70 °C - PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.26 Details Yes FBGA 2.7 V 1.7 V 1.8 V Synchronous NBT SRAM 1.8, 2.5 V Commercial grade 0 to 85 °C Tray GS8161Z36DGD - - 3A991.B.2.B NBT - FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 - 2 V - COMMERCIAL 1.7 V 18 Mbit 4 SYNCHRONOUS 175 mA, 190 mA 7.5 ns Flow-Through/Pipelined 512 k x 36 - 1.4 mm 36 - SRAM 18 Mbit - 18874368 bit Commercial PARALLEL - ZBT SRAM - SRAM 15 mm 13 mm
        GS8161Z36DGD-150V
        GS8161Z36DGD-150V

        GSI Technology
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        GSI Technology GS8342Q18BGD-333
        Mfr. Тип
        GS8342Q18BGD-333
        Anlielectronics Тип

        		GSI Technology
        QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - BGA-165 - - - GSI Technology - QDR 15 - Parallel GSI Technology - 333 MHz 333 MHz 1.9 V + 70 C DDR 1.7 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 2 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II 1.8000 V Commercial grade 0 to 85 °C Tray GS8342Q18BGD - - - SigmaQuad-II - - - Memory & Data Storage - - - - - - - 165 - - - - - - 36 Mbit 2 - 885 mA - Pipelined 2 M x 18 - - - 20 Bit SRAM 36 Mb - - Commercial - - - - SRAM - -
          GS8342Q18BGD-333
          GS8342Q18BGD-333

          GSI Technology
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          GSI Technology GS88236CB-250
          Mfr. Тип
          GS88236CB-250
          Anlielectronics Тип

          		GSI Technology
          Cache SRAM, 256KX36, 5.5ns, CMOS, PBGA119, FPBGA-119
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 8 Weeks BGA-119 YES 119 5.5 ns GSI Technology - - 42 GSI TECHNOLOGY Parallel GSI Technology GS88236CB-250 250 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - 262144 words 256000 70 °C - PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.13 N No - 3.6 V 2.3 V 2.5 V - SyncBurst - - - Tray GS88236CB e0 No 3A991.B.2.B Pipeline/Flow Through Tin/Lead (Sn/Pb) PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified 2.7 V - COMMERCIAL 2.3 V 9 Mbit - SYNCHRONOUS 155 mA, 195 mA 5.5 ns - 256 k x 36 - 1.77 mm 36 - SRAM - - 9437184 bit - PARALLEL - CACHE SRAM - SRAM 22 mm 14 mm
            GS88236CB-250
            GS88236CB-250

            GSI Technology
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            GSI Technology GS8182S18BGD-200
            Mfr. Тип
            GS8182S18BGD-200
            Anlielectronics Тип

            		GSI Technology
            DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - BGA-165 - - - GSI Technology - - 18 - Parallel GSI Technology - 200 MHz - - + 70 C DDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - - SigmaSIO DDR-II - - - Tray GS8182S18BGD - - - SigmaSIO DDR-II - - - Memory & Data Storage - - - - - - - - - - - - - - 18 Mbit - - 355 mA - - 1 M x 18 - - - - SRAM - - - - - - - - SRAM - -
              GS8182S18BGD-200
              GS8182S18BGD-200

              GSI Technology
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              GSI Technology GS8161E18DGD-200I
              Mfr. Тип
              GS8161E18DGD-200I
              Anlielectronics Тип

              		GSI Technology
              Cache SRAM, 1MX18, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 10 Weeks - YES 165 6.5 ns - - SDR - GSI TECHNOLOGY - GSI Technology GS8161E18DGD-200I - 153.8@Flow-Through/200@Pipelined MHz 2.7, 3.6 V - - 2.3, 3 V - - - Surface Mount - 18 Bit 1 MWords 1000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.29 - Yes FBGA - - 2.5 V Synchronous - 2.5, 3.3 V Industrial grade -40 to 85 °C - - - - 3A991.B.2.B - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 - CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified 2.7 V - INDUSTRIAL 2.3 V - 2 SYNCHRONOUS - - Flow-Through/Pipelined 1MX18 - 1.4 mm 18 20 Bit - 18 Mbit - 18874368 bit Industrial PARALLEL - CACHE SRAM - - 15 mm 13 mm
                GS8161E18DGD-200I
                GS8161E18DGD-200I

                GSI Technology
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                GSI Technology GS8182S36BD-167
                Mfr. Тип
                GS8182S36BD-167
                Anlielectronics Тип

                		GSI Technology
                DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - BGA-165 - - - - - - - - Parallel - - 167 MHz - - + 70 C - - 0 C - - - SMD/SMT - - - - - - - - - - - - - - - - - - 1.9 V 1.7 V - - - - - - - GS8182S36BD - - - - - - - - - - - - - - - - - - - - - - 18 Mbit - - 380 mA - - 512 k x 36 - - - - - - - - - - - - - - - -
                  GS8182S36BD-167
                  GS8182S36BD-167

                  GSI Technology
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  GSI Technology GS8342D37BD-300
                  Mfr. Тип
                  GS8342D37BD-300
                  Anlielectronics Тип

                  		GSI Technology
                  QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, BGA-165
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 10 Weeks BGA-165 YES 165 0.45 ns GSI Technology 300 MHz QDR 15 GSI TECHNOLOGY Parallel GSI Technology GS8342D37BD-300 300 MHz 300 MHz - + 70 C DDR - 0 C Yes - Surface Mount SMD/SMT 36 Bit 1 MWords 1000000 70 °C - PLASTIC/EPOXY LBGA LBGA, BGA165,11X15,40 BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.36 N No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaQuad-II+ 1.8000 V Commercial grade 0 to 85 °C Tray GS8342D37BD - - 3A991.B.2.B SigmaQuad-II+ B4 - PIPELINED ARCHITECTURE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified 1.9 V 1.5/1.8,1.8 V COMMERCIAL 1.7 V 36 Mbit 2 SYNCHRONOUS 675 mA - Pipelined 1 M x 36 3-STATE 1.4 mm 36 18 Bit SRAM 36 Mbit 0.2 A 37748736 bit Commercial PARALLEL SEPARATE QDR SRAM 1.7 V SRAM 15 mm 13 mm
                    GS8342D37BD-300
                    GS8342D37BD-300

                    GSI Technology
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    GSI Technology GS8672D38BE-450
                    Mfr. Тип
                    GS8672D38BE-450
                    Anlielectronics Тип

                    		GSI Technology
                    QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - BGA-165 - - - GSI Technology - - 15 - Parallel GSI Technology - 450 MHz - - + 70 C QDR-II - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - Tray GS8672D38BE - - - SigmaQuad-II+ B4 - - - Memory & Data Storage - - - - - - - - - - - - - - 72 Mbit - - 2.05 A - - 2 M x 36 - - - - SRAM - - 72 - - - - - SRAM - -
                      GS8672D38BE-450
                      GS8672D38BE-450

                      GSI Technology
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      GSI Technology GS8161E32DD-250I
                      Mfr. Тип
                      GS8161E32DD-250I
                      Anlielectronics Тип

                      		GSI Technology
                      Cache SRAM, 512KX32, 5.5ns, CMOS, PBGA165, FPBGA-165
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - BGA-165 - - - GSI Technology - - 36 - - GSI Technology - 250 MHz - - + 85 C SDR - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - - - - 3.6 V 2.3 V - - SyncBurst - - - Tray GS8161E32DD - - - DCD Pipeline/Flow Through - - - Memory & Data Storage - - - - - - - - - - - - - - 18 Mbit - - 250 mA, 270 mA 5.5 ns - 512 k x 32 - - - - SRAM - - - - - - - - SRAM - -
                        GS8161E32DD-250I
                        GS8161E32DD-250I

                        GSI Technology
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        GSI Technology GS8342D08BGD-300I
                        Mfr. Тип
                        GS8342D08BGD-300I
                        Anlielectronics Тип

                        		GSI Technology
                        QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - BGA-165 - - - GSI Technology - QDR 15 - Parallel GSI Technology - 300 MHz 300 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 8 Bit 4 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II 1.8000 V Industrial grade -40 to 100 °C Tray GS8342D08BGD - - - SigmaQuad-II - - - Memory & Data Storage - - - - - - - 165 - - - - - - 36 Mbit 2 - 540 mA - Pipelined 4 M x 8 - - - 20 Bit SRAM 36 Mbit - - Industrial - - - - SRAM - -
                          GS8342D08BGD-300I
                          GS8342D08BGD-300I

                          GSI Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          GSI Technology GS8342D20BD-350I
                          Mfr. Тип
                          GS8342D20BD-350I
                          Anlielectronics Тип

                          		GSI Technology
                          QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 10 Weeks BGA-165 YES 165 0.45 ns GSI Technology 350 MHz QDR 15 GSI TECHNOLOGY Parallel GSI Technology GS8342D20BD-350I 350 MHz 350 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 2 MWords 4000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, BGA165,11X15,40 BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA - 5.21 - No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaQuad-II+ 1.8000 V Industrial grade -40 to 100 °C Tray GS8342D20BD - - 3A991.B.2.B SigmaQuad-II+ - PIPELINED ARCHITECTURE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL - 1 1 mm compliant 165 R-PBGA-B165 Not Qualified 1.9 V 1.5/1.8,1.8 V INDUSTRIAL 1.7 V 36 Mbit 2 SYNCHRONOUS 675 mA - Pipelined 2 M x 18 3-STATE 1.4 mm 18 19 Bit SRAM 36 Mbit 0.23 A 75497472 bit Industrial PARALLEL SEPARATE QDR SRAM 1.7 V SRAM 15 mm 13 mm
                            GS8342D20BD-350I
                            GS8342D20BD-350I

                            GSI Technology
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            GSI Technology GS8161E36DGD-150
                            Mfr. Тип
                            GS8161E36DGD-150
                            Anlielectronics Тип

                            		GSI Technology
                            Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - BGA-165 - - - GSI Technology - - 36 - Parallel GSI Technology - 150 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 3.6 V 2.3 V - - SyncBurst - - - Tray GS8161E36DGD - - - DCD Pipeline/Flow Through - - - Memory & Data Storage - - - - - - - - - - - - - - 18 Mbit - - 180 mA, 190 mA 7.5 ns - 512 k x 36 - - - - SRAM - - - - - - - - SRAM - -
                              GS8161E36DGD-150
                              GS8161E36DGD-150

                              GSI Technology
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              GSI Technology GS816136DD-150V
                              Mfr. Тип
                              GS816136DD-150V
                              Anlielectronics Тип

                              		GSI Technology
                              Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, FPBGA-165
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - BGA-165 - - - - - SDR - - Parallel - - 150 MHz 133.3@Flow-Through/150@Pipelined MHz 2, 2.7 V + 70 C - 1.7, 2.3 V 0 C - - Surface Mount SMD/SMT 36 Bit 512 kWords - - - - - - - - - - - - - - - FBGA 2.7 V 1.7 V - Synchronous - 1.8, 2.5 V Commercial grade 0 to 85 °C - - - - - - - - - - - - - - - - - 165 - - - - - - 18 Mbit 4 - 175 mA, 190 mA 7.5 ns Flow-Through/Pipelined 512 k x 36 - - - 19 Bit - 18 Mbit - - Commercial - - - - - - -
                                GS816136DD-150V
                                GS816136DD-150V

                                GSI Technology
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                GSI Technology GS881Z32CGD-300
                                Mfr. Тип
                                GS881Z32CGD-300
                                Anlielectronics Тип

                                		GSI Technology
                                ZBT SRAM, 256KX32, 5ns, CMOS, PQFP100, TQFP-100
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 8 Weeks BGA-165 YES 100 5 ns GSI Technology - SDR 36 GSI TECHNOLOGY Parallel GSI Technology GS881Z32CGD-300 300 MHz 200@Flow-Through/300@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes 3 Surface Mount SMD/SMT 32 Bit 256 kWords 256000 70 °C - PLASTIC/EPOXY LQFP LQFP, - RECTANGULAR FLATPACK, LOW PROFILE Active QFP NOT SPECIFIED 5.29 Details Yes FBGA 3.6 V 2.3 V 2.5 V Synchronous NBT SRAM 2.5, 3.3 V Commercial grade 0 to 70 °C Tray GS881Z32CGD e1 Yes 3A991.B.2.B NBT Pipeline/Flow Through Tin/Silver/Copper (Sn/Ag/Cu) FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS QUAD GULL WING 260 1 0.65 mm compliant 165 R-PQFP-G100 Not Qualified 2.7 V - COMMERCIAL 2.3 V 9 Mbit 1 SYNCHRONOUS 165 mA, 225 mA 5 ns Flow-Through/Pipelined 256 k x 32 - 1.6 mm 32 18 Bit SRAM 8 Mbit - 8388608 bit Commercial PARALLEL - ZBT SRAM - SRAM 20 mm 14 mm
                                  GS881Z32CGD-300
                                  GS881Z32CGD-300

                                  GSI Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  GSI Technology GS816132DGD-250V
                                  Mfr. Тип
                                  GS816132DGD-250V
                                  Anlielectronics Тип

                                  		GSI Technology
                                  Cache SRAM, 512KX32, 5.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - BGA-165 - - - GSI Technology - SDR 18 - Parallel GSI Technology - 250 MHz 181.8@Flow-Through/250@Pipelined MHz 2, 2.7 V + 85 C SDR 1.7, 2.3 V 0 C Yes - Surface Mount SMD/SMT 32 Bit 512 kWords - - - - - - - - - - - - - Details - FBGA 2.7 V 1.7 V - Synchronous SyncBurst 1.8, 2.5 V Commercial grade 0 to 85 °C Tray GS816132DGD - - - Synchronous Burst - - - Memory & Data Storage - - - - - - - 165 - - - - - - 18 Mbit 4 - 225 mA, 245 mA 5.5 ns Flow-Through/Pipelined 512 k x 32 - - - 19 Bit SRAM 18 Mbit - - Commercial - - - - SRAM - -
                                    GS816132DGD-250V
                                    GS816132DGD-250V

                                    GSI Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    GSI Technology GS8182S36BGD-200I
                                    Mfr. Тип
                                    GS8182S36BGD-200I
                                    Anlielectronics Тип

                                    		GSI Technology
                                    DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - BGA-165 - - - GSI Technology - - 18 - Parallel GSI Technology - 200 MHz - - + 85 C DDR - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - - SigmaSIO DDR-II - - - Tray GS8182S36BGD - - - SigmaSIO DDR-II - - - Memory & Data Storage - - - - - - - - - - - - - - 18 Mbit - - 445 mA - - 512 k x 36 - - - - SRAM - - - - - - - - SRAM - -
                                      GS8182S36BGD-200I
                                      GS8182S36BGD-200I

                                      GSI Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      GSI Technology GS8161Z18DD-200I
                                      Mfr. Тип
                                      GS8161Z18DD-200I
                                      Anlielectronics Тип

                                      		GSI Technology
                                      ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 10 Weeks BGA-165 YES 165 6.5 ns GSI Technology - - 36 GSI TECHNOLOGY Parallel GSI Technology GS8161Z18DD-200I 200 MHz 153.8@Flow-Through/200@Pipelined MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V - 40 C Yes - - SMD/SMT 18 Bit 1048576 words 1000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.26 - No FBGA 3.6 V 2.3 V 2.5 V Synchronous NBT SRAM 2.5, 3.3 V Industrial grade -40 to 85 °C Tray GS8161Z18DD - - 3A991.B.2.B NBT - FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 - 2.7 V - INDUSTRIAL 2.3 V 18 Mbit - SYNCHRONOUS 215 mA 6.5@Flow-Through/3@P - 1 M x 18 - 1.4 mm 18 - SRAM - - 18 Industrial PARALLEL - ZBT SRAM - SRAM 15 mm 13 mm
                                        GS8161Z18DD-200I
                                        GS8161Z18DD-200I

                                        GSI Technology
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        GSI Technology GS8342DT10BGD-300I
                                        Mfr. Тип
                                        GS8342DT10BGD-300I
                                        Anlielectronics Тип

                                        		GSI Technology
                                        QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - BGA-165 - - - GSI Technology - QDR 15 - Parallel GSI Technology - 300 MHz 300 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 9 Bit 4 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II+ 1.8000 V Industrial grade -40 to 100 °C Tray GS8342DT10BGD - - - SigmaQuad-II+ B4 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 36 Mbit 2 - 540 mA - Pipelined 4 M x 9 - - - 20 Bit SRAM 36 Mbit - - Industrial - - - - SRAM - -
                                          GS8342DT10BGD-300I
                                          GS8342DT10BGD-300I

                                          GSI Technology
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS816236DGB-400,GS8672D19BE-450I,GS8161Z36DGD-150V,GS8342Q18BGD-333,GS88236CB-250.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.