Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page11

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8342T10BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342T10BD	-	SigmaDDR-II+ B2	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	460 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	SRAM	36 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8342T10BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q18BE-200 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	200 MHz	-	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8672Q18BE-200	200 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	SMD/SMT	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	-	5.49	N	No	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II	-	-	-	Tray	GS8672Q18BE	3A991.B.2.B	SigmaQuad-II	-	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	-	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	72 Mbit	-	SYNCHRONOUS	850 mA	-	-	4 M x 18	3-STATE	1.5 mm	18	-	SRAM	-	72	-	PARALLEL	SEPARATE	STANDARD SRAM	1.7 V	SRAM	17 mm	15 mm
GS8672Q18BE-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816132DGD-150IV Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	32 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816132DGD	-	Synchronous Burst	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32	-	-	-	19 Bit	SRAM	18 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS816132DGD-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T19BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342T19BD	-	SigmaDDR-II+ B2	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	460 mA	-	Pipelined	2 M x 18	-	-	-	20 Bit	SRAM	36 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8342T19BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z36DGD-250I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 5.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	-	-	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGD-250I	250 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	SMD/SMT	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	NBT SRAM	-	-	-	Tray	GS8161Z36DGD	3A991.B.2.B	NBT	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2.7 V	-	INDUSTRIAL	2.3 V	18 Mbit	-	SYNCHRONOUS	250 mA, 270 mA	5.5 ns	-	512 k x 36	-	1.4 mm	36	-	SRAM	-	18874368 bit	-	PARALLEL	-	ZBT SRAM	-	SRAM	15 mm	13 mm
GS8161Z36DGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT07BGD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	333 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342TT07BGD-333	333 MHz	333 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	8 Bit	4 MWords	4000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342TT07BGD	3A991.B.2.B	SigmaDDR-II+ B2	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	1	SYNCHRONOUS	515 mA	-	Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	33554432 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342TT07BGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D19BGE-450 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	450 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672D19BGE	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.49 A	-	-	4 M x 18	-	-	-	-	SRAM	-	72	-	-	-	-	-	SRAM	-	-
GS8672D19BGE-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q18BGE-300 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	300 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	Tray	GS8672Q18BGE	-	SigmaQuad-II	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.1 A	-	-	4 M x 18	-	-	-	-	SRAM	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q18BGE-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816136DD-333IV Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816136DD	-	Synchronous Burst	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS816136DD-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8160Z36DGT-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	-	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z36DGT-250V	250 MHz	-	-	+ 85 C	SDR	-	0 C	Yes	-	SMD/SMT	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.49	Details	Yes	-	2.7 V	1.7 V	1.8 V	-	NBT SRAM	-	-	-	Tray	GS8160Z36DGT	3A991.B.2.B	NBT	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	-	2 V	-	COMMERCIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	225 mA, 245 mA	5.5 ns	-	512 k x 36	-	1.6 mm	36	-	SRAM	-	18	-	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS8160Z36DGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DD-200IV Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DD-200IV	200 MHz	-	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.25	-	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816218DD	3A991.B.2.B	Pipeline/Flow Through	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2 V	-	INDUSTRIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.4 mm	18	-	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	-	CACHE SRAM	-	SRAM	15 mm	13 mm
GS816218DD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S09BD-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaSIO DDR-II	-	-	-	Tray	GS8182S09BD	-	SigmaSIO DDR-II	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	430 mA	-	-	2 M x 9	-	-	-	-	SRAM	-	-	-	-	-	-	-	SRAM	-	-
GS8182S09BD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D19BGE-300I Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	300 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672D19BGE	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.12 A	-	-	4 M x 18	-	-	-	-	SRAM	-	72	-	-	-	-	-	SRAM	-	-
GS8672D19BGE-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84036CB-250 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 36 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84036CB-250	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	SMD/SMT	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.73	-	No	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS84036CB	3A991.B.2.B	Pipeline/Flow Through	IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	155 mA, 195 mA	6.5 ns	-	128 k x 36	-	1.99 mm	36	-	-	-	4718592 bit	-	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS84036CB-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84032CB-250 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 32 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	-	84	-	Parallel	-	-	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS84032CB	-	Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	155 mA, 195 mA	6.5 ns	-	128 k x 32	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS84032CB-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D37BGE-450 Anlielectronics Тип	GSI Technology	Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	450 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672D37BGE	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	2.05 A	-	-	2 M x 36	-	-	-	-	SRAM	-	72	-	-	-	-	-	SRAM	-	-
GS8672D37BGE-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q37BE-375 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	375 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672Q37BE	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.76 A	-	-	2 M x 36	-	-	-	-	SRAM	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q37BE-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q07BGD-200I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	200 MHz	200 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q07BGD	-	SigmaQuad-II+ B2	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	565 mA	-	Pipelined	4 M x 8	-	-	-	21 Bit	SRAM	36 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8342Q07BGD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D38BE-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	-	-	Parallel	-	-	500 MHz	-	-	+ 85 C	-	-	- 40 C	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	-	-	-	-	-	GS8672D38BE	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	2.25 A	-	-	2 M x 36	-	-	-	-	-	-	72	-	-	-	-	-	-	-	-
GS8672D38BE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S18BGD-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342S18BGD	-	SigmaSIO DDR-II	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	675 mA	-	Pipelined	2 M x 18	-	-	-	20 Bit	SRAM	36 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8342S18BGD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8342T10BD-300I,GS8672Q18BE-200,GS816132DGD-150IV,GS8342T19BD-300I,GS8161Z36DGD-250I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

Индекс :

0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Локаль

Язык

Валюта

Здравствуйте, добро пожаловать в ANLI

Anlielectronics

Локаль

Язык

Валюта

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Integrated Circuits (ICs)