Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page19

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8161Z36DD-333IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	-	NBT SRAM	1.8, 2.5 V	-	-40 to 100 °C	Tray	GS8161Z36DD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	-	-	260 mA, 330 mA	5@Flow-Through/3@Pip	-	512 k x 36	-	-	-	19 Bit	SRAM	-	-	18	-	-	-	-	-	SRAM	-	-
GS8161Z36DD-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D19BGD-300 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342D19BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	530 mA	-	Pipelined	2 M x 18	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342D19BGD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816036DGT-333V Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816036DGT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	4	-	260 mA, 315 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS816036DGT-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S08BGD-375 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	DDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182S08BGD-375	375 MHz	375 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	3	Surface Mount	SMD/SMT	8 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.19	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO DDR-II	1.8000 V	Commercial grade	0 to 70 °C	Tray	GS8182S08BGD	e1	Yes	3A991.B.2.B	SigmaSIO DDR-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	680 mA	-	Pipelined	2 M x 8	-	1.4 mm	8	20 Bit	SRAM	18 Mbit	-	16777216 bit	Commercial	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182S08BGD-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q07BD-250I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	250 MHz	250 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q07BD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	675 mA	-	Pipelined	4 M x 8	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342Q07BD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832236AB-150I Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	150 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-150I	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.12	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	210 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	22 mm	14 mm
GS832236AB-150I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS841Z36CGT-100 Anlielectronics Тип	GSI Technology	ZBT SRAM, 128KX36, 12ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	7 Weeks	TQFP-100	YES	100	12 ns	GSI Technology	100 MHz	-	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS841Z36CGT-100	100 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	NBT SRAM	-	-	-	Tray	GS841Z36CGT	-	-	3A991.B.2.B	NBT Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	110 mA, 120 mA	12 ns	-	128 k x 36	3-STATE	1.6 mm	36	-	SRAM	-	0.025 A	4718592 bit	-	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	20 mm	14 mm
GS841Z36CGT-100 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D08BGD-300 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342D08BGD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	530 mA	-	Pipelined	4 M x 8	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342D08BGD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT37BGD-300 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342TT37BGD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	570 mA	-	Pipelined	1 M x 36	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342TT37BGD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D18BGD-333I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182D18BGD-333I	333 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	3	-	SMD/SMT	-	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.18	Details	Yes	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II	-	-	-	Tray	GS8182D18BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	525 mA	-	-	1 M x 18	-	1.4 mm	18	-	SRAM	-	-	18874368 bit	-	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182D18BGD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D18BD-400 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342D18BD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	705 mA	-	Pipelined	2 M x 18	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342D18BD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S36BGD-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182S36BGD-250I	250 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	3	-	SMD/SMT	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15	Details	Yes	-	1.9 V	1.7 V	1.8 V	-	SigmaSIO DDR-II	-	-	-	Tray	GS8182S36BGD	e1	Yes	3A991.B.2.B	SigmaSIO DDR-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	525 mA	-	-	512 k x 36	-	1.4 mm	36	-	SRAM	-	-	18874368 bit	-	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182S36BGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182Q36BD-167 Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	167 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	Tray	GS8182Q36BD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	485 mA	-	-	512 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS8182Q36BD-167 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342R36BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342R36BD	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	580 mA	-	Pipelined	1 M x 36	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342R36BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S18BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	-	SMD/SMT	18 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	-	SigmaSIO DDR-II	1.8000 V	-	-40 to 100 °C	Tray	GS8342S18BD	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	-	-	540 mA	0.45	-	2 M x 18	-	-	-	-	SRAM	-	-	36	-	-	-	-	-	SRAM	-	-
GS8342S18BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832236AGD-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	250 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AGD-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.12	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AGD	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
GS832236AGD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D07BGD-300 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342D07BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	530 mA	-	Pipelined	4 M x 8	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342D07BGD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z18DGT-150IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	7.5 ns	-	-	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z18DGT-150IV	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C	-	1.7, 2.3 V	- 40 C	-	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.26	-	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	-	1.8, 2.5 V	Industrial grade	-40 to 100 °C	-	GS8161Z18DGT	-	-	3A991.B.2.B	-	-	ALSO OPERATES AT 2.5V	8542.32.00.41	-	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	-	2 V	-	INDUSTRIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	180 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1MX18	-	1.6 mm	18	20 Bit	-	18 Mbit	-	18874368 bit	Industrial	PARALLEL	-	ZBT SRAM	-	-	20 mm	14 mm
GS8161Z18DGT-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T09BD-400 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342T09BD	-	-	-	SigmaDDR-II B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	600 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342T09BD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z32DD-333IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX32, 5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z32DD-333IV	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	512 kWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	-	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8161Z32DD	-	-	3A991.B.2.B	NBT	-	FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2 V	-	INDUSTRIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 32	-	1.4 mm	32	19 Bit	SRAM	18 Mbit	-	33554432 bit	Industrial	PARALLEL	-	ZBT SRAM	-	SRAM	15 mm	13 mm
GS8161Z32DD-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8161Z36DD-333IV,GS8342D19BGD-300,GS816036DGT-333V,GS8182S08BGD-375,GS8342Q07BD-250I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)