Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page2

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS81302TT07E-400I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302TT07E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	905 mA	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302TT07E-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88132CGT-150I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, CMOS, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	-	GSI Technology	-	-	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88132CGT-150I	150 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	262144 words	256000	85 °C	-40 °C	UNSPECIFIED	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.29	Details	Yes	-	3.6 V	2.3 V	3.3 V	-	SyncBurst	-	-	-	Tray	GS88132CGT	-	-	3A991.B.2.B	Pipeline/Flow Through	-	ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-XQFP-G100	Not Qualified	3.6 V	-	INDUSTRIAL	3 V	9 Mbit	-	SYNCHRONOUS	150 mA, 160 mA	7.5 ns	-	256 k x 36	-	1.6 mm	32	-	SRAM	-	-	8388608 bit	-	SERIAL	-	CACHE SRAM	-	SRAM	20 mm	14 mm
GS88132CGT-150I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816132DD-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX32, 5.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS816132DD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	230 mA, 250 mA	5.5 ns	-	512 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS816132DD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880F18CGT-6.5I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	153 MHz	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880F18CGT-6.5I	-	153.8 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.36	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS880F18CGT	e3	Yes	3A991.B.2.B	Flow Through	PURE MATTE TIN	FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	150 mA	6.5 ns	Flow-Through	512 k x 18	3-STATE	1.6 mm	18	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
GS880F18CGT-6.5I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AGB-250I Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	14	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832218AGB	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	36 Mbit	2	-	235 mA, 275 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS832218AGB-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D38BE-500 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	500 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672D38BE	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	2.23 A	-	-	2 M x 36	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672D38BE-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342QT19BGD-200 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	200 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342QT19BGD-200	200 MHz	200 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.22	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342QT19BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	555 mA	-	Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit	-	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342QT19BGD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS74116AGX-8I Anlielectronics Тип	GSI Technology	Standard SRAM, 256KX16, 8ns, CMOS, PBGA48, 6 X 10 MM, ROHS COMPLIANT, FBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	BGA-48	YES	48	8 ns	GSI Technology	-	-	135	GSI TECHNOLOGY	Parallel	GSI Technology	GS74116AGX-8I	-	-	3.6 V	+ 85 C	SDR	3 V	- 40 C	-	3	Surface Mount	SMD/SMT	16 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.2	Details	Yes	FBGA	3.6 V	3 V	3.3 V	Asynchronous	-	3.3000 V	Industrial grade	-40 to 85 °C	-	GS74116AGX	e1	Yes	3A991.B.2.B	Asynchronous	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	-	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.6 V	3.3 V	INDUSTRIAL	3 V	4 Mbit	1	ASYNCHRONOUS	140 mA	8 ns	-	256 k x 16	3-STATE	1.2 mm	16	18 Bit	SRAM	4 Mbit	0.02 A	4194304 bit	Industrial	PARALLEL	COMMON	STANDARD SRAM	3 V	SRAM	10 mm	6 mm
GS74116AGX-8I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D18BGE-400 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	400 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	Tray	GS8672D18BGE	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.36 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672D18BGE-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT07E-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	-	SMD/SMT	8 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	-	-40 to 100 °C	Tray	GS81302TT07E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	-	-	1.01 A	0.45	-	16 M x 8	-	-	-	-	SRAM	-	-	144	-	-	-	-	-	SRAM	-	-
GS81302TT07E-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS71108AGU-12I Anlielectronics Тип	GSI Technology	Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	-	YES	48	12 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS71108AGU-12I	-	-	-	-	-	-	-	-	3	-	-	-	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.22	-	Yes	-	-	-	3.3 V	-	-	-	-	-	-	-	e1	Yes	3A991.B.2.B	-	TIN SILVER COPPER	-	8542.32.00.41	-	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.6 V	-	INDUSTRIAL	3 V	-	-	ASYNCHRONOUS	-	-	-	128KX8	-	1.2 mm	8	-	-	-	-	1048576 bit	-	PARALLEL	-	STANDARD SRAM	-	-	8 mm	6 mm
GS71108AGU-12I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS71108AGU-8 Anlielectronics Тип	GSI Technology	Standard SRAM, 128KX8, 8ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	-	YES	48	8 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS71108AGU-8	-	-	-	-	-	-	-	-	3	-	-	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.22	-	Yes	-	-	-	3.3 V	-	-	-	-	-	-	-	e1	Yes	3A991.B.2.B	-	TIN SILVER COPPER	-	8542.32.00.41	-	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.6 V	-	COMMERCIAL	3 V	-	-	ASYNCHRONOUS	-	-	-	128KX8	-	1.2 mm	8	-	-	-	-	1048576 bit	-	PARALLEL	-	STANDARD SRAM	-	-	8 mm	6 mm
GS71108AGU-8 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88018CGT-250I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX18, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	72	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88018CGT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	9 Mbit	2	-	165 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18	-	-	-	19 Bit	SRAM	9 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS88018CGT-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T37E-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T37E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	905 mA	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302T37E-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D11GE-500I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.37ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	500 MHz	500 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302D11GE	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.27 A	-	Pipelined	16 M x 9	-	-	-	22 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302D11GE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z32CD-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX32, 6.5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS881Z32CD	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	160 mA, 190 mA	6.5 ns	-	256 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS881Z32CD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T07GE-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T07GE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	810 mA	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302T07GE-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS74116AX-10E Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-48	-	-	-	GSI Technology	-	-	135	-	Parallel	GSI Technology	-	-	-	-	-	-	-	-	-	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	3.6 V	3 V	-	-	-	-	-	-	-	GS74116AX	-	-	-	Asynchronous	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	105 mA	10 ns	-	256 k x 16	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS74116AX-10E GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS882Z36CGD-250I Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS882Z36CGD	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	175 mA, 215 mA	5.5 ns	-	256 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS882Z36CGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT38E-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302DT38E-500I	500 MHz	500 MHz	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.06	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302DT38E	-	No	3A991.B.2.B	SigmaQuad-II+	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	1.67 A	-	Pipelined	4 M x 36	-	1.5 mm	36	20 Bit	SRAM	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	QDR SRAM	-	SRAM	17 mm	15 mm
GS81302DT38E-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS81302TT07E-400I,GS88132CGT-150I,GS816132DD-250,GS880F18CGT-6.5I,GS832218AGB-250I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)