Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page21

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8342S09BGD-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342S09BGD	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	675 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342S09BGD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGT-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	-	-	SDR	-	-	Parallel	-	-	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	-	1.7, 2.3 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TQFP	2.7 V	1.7 V	-	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	2	-	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	-	18 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS816118DGT-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGT-333V Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816118DGT	-	-	-	Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	2	-	220 mA, 280 mA	5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS816118DGT-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z32DD-150I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX32, 7.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	7.5 ns	-	-	SDR	-	GSI TECHNOLOGY	-	GSI Technology	GS8161Z32DD-150I	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	-	2.3, 3 V	- 40 C	-	-	Surface Mount	SMD/SMT	32 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Industrial grade	-40 to 85 °C	-	-	-	-	3A991.B.2.B	-	-	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	-	165	R-PBGA-B165	-	2.7 V	-	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32	-	1.4 mm	32	19 Bit	-	18 Mbit	-	16777216 bit	Industrial	PARALLEL	-	ZBT SRAM	-	-	15 mm	13 mm
GS8161Z32DD-150I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AGD-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832218AGD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS832218AGD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT38BD-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342TT38BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	860 mA	-	Pipelined	1 M x 36	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342TT38BD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DGD-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5.5ns, CMOS, PBGA165, ROHS COMPLIANT, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816218DGD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	2	-	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS816218DGD-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342R08BGD-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	250 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342R08BGD-250I	250 MHz	250 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.35	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaCIO DDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342R08BGD	-	-	3A991.B.2.B	SigmaDDR-II B4	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	-	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	36 Mbit	1	SYNCHRONOUS	405 mA	-	Pipelined	4 M x 8	3-STATE	1.4 mm	8	20 Bit	SRAM	36 Mbit	0.185 A	33554432 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342R08BGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342QT37BD-250 Anlielectronics Тип	GSI Technology	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	250 MHz	250 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342QT37BD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	765 mA	-	Pipelined	1 M x 36	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342QT37BD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816236DGD-200IV Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816236DGD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS816236DGD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z32DGD-333V Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX32, 5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z32DGD-333V	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	512 kWords	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z32DGD	-	-	3A991.B.2.B	NBT	-	FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	-	165	R-PBGA-B165	-	2 V	-	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	240 mA, 310 mA	5 ns	Flow-Through/Pipelined	512 k x 32	-	1.4 mm	32	19 Bit	SRAM	18 Mbit	-	33554432 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	15 mm	13 mm
GS8161Z32DGD-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672T38BE-400I Anlielectronics Тип	GSI Technology	Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	400 MHz	-	-	+ 85 C	DDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II+	-	-	-	Tray	GS8672T38BE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.45 A	-	-	2 M x 36	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672T38BE-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832236AGB-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	4.5 ns	GSI Technology	333 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AGB-333	333 MHz	-	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.12	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AGB	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	-	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	260 mA, 345 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	-	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	22 mm	14 mm
GS832236AGB-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E32CGT-150I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	150 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS880E32CGT	-	-	-	DCD	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	150 mA, 160 mA	7.5 ns	-	256 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS880E32CGT-150I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D37BD-333I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	333 MHz	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182D37BD-333I	333 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	-	SMD/SMT	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.21	-	No	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II+	-	-	-	Tray	GS8182D37BD	e0	No	3A991.B.2.B	SigmaQuad II+	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	-	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	585 mA	-	-	512 k x 36	3-STATE	1.4 mm	36	-	SRAM	-	0.17 A	18874368 bit	-	PARALLEL	SEPARATE	DDR SRAM	1.7 V	SRAM	15 mm	10 mm
GS8182D37BD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S18BD-350 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	350 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342S18BD-350	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342S18BD	-	-	3A991.B.2.B	SigmaSIO DDR-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	-	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	665 mA	-	Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit	0.22 A	37748736 bit	Commercial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342S18BD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS840Z36CGT-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 128KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS840Z36CGT	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	160 mA, 190 mA	6.5 ns	-	128 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS840Z36CGT-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT10BGD-300 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342TT10BGD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	450 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342TT10BGD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8160Z18DGT-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z18DGT-250V	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	-	5.31	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8160Z18DGT	-	-	3A991.B.2.B	NBT	-	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	NOT SPECIFIED	100	R-PQFP-G100	-	2 V	-	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.6 mm	18	20 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS8160Z18DGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z36DGB-150V Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	-	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z36DGB-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8162Z36DGB	-	-	3A991.B.2.B	NBT Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	119	R-PBGA-B119	Not Qualified	2 V	-	COMMERCIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36	-	1.99 mm	36	19 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	22 mm	14 mm
GS8162Z36DGB-150V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8342S09BGD-350I,GS816118DGT-200V,GS816118DGT-333V,GS8161Z32DD-150I,GS832218AGD-250.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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