Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page26

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8672Q19BE-333 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	333 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672Q19BE	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.19 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q19BE-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D37BE-450 Anlielectronics Тип	GSI Technology	Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	-	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8672D37BE-450	450 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	2097152 words	2000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	-	-	5.84	N	-	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II+	-	-	-	Tray	GS8672D37BE	-	-	3A991.B.2.B	SigmaQuad-II+	-	-	-	Memory & Data Storage	CMOS	BOTTOM	BALL	-	1	1 mm	compliant	-	R-PBGA-B165	-	1.9 V	-	OTHER	1.7 V	72 Mbit	-	SYNCHRONOUS	2.05 A	-	-	2 M x 36	-	1.5 mm	36	-	SRAM	-	-	72	-	PARALLEL	-	STANDARD SRAM	-	SRAM	17 mm	15 mm
GS8672D37BE-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q20BE-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	500 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672Q20BE	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.63 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q20BE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS74117AGX-10 Anlielectronics Тип	GSI Technology	Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 6 X 10 MM, LEAD FREE, FPBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	BGA-119	YES	48	10 ns	GSI Technology	-	-	135	GSI TECHNOLOGY	Parallel	GSI Technology	GS74117AGX-10	-	-	3.6 V	+ 70 C	SDR	3 V	0 C	-	3	Surface Mount	SMD/SMT	16 Bit	256 kWords	256000	70 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.23	Details	Yes	FBGA	3.6 V	3 V	3.3 V	Asynchronous	-	3.3000 V	Commercial grade	0 to 70 °C	-	GS74117AGX	e1	Yes	3A991.B.2.B	Asynchronous	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	-	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.6 V	3.3 V	COMMERCIAL	3 V	4 Mbit	1	ASYNCHRONOUS	105 mA	10 ns	-	256 k x 16	3-STATE	1.2 mm	16	18 Bit	SRAM	4 Mbit	0.01 A	4194304 bit	Commercial	PARALLEL	COMMON	STANDARD SRAM	3 V	SRAM	10 mm	6 mm
GS74117AGX-10 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342DT11BGD-400 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342DT11BGD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	705 mA	-	Pipelined	4 M x 9	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342DT11BGD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z18AGD-333 Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX18, 4.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	4.5 ns	GSI Technology	333 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AGD-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AGD	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	235 mA, 320 mA	4.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	15 mm	13 mm
GS8322Z18AGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT11BGD-350 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	DDR	-	-	Parallel	-	-	350 MHz	350 MHz	-	+ 70 C	-	-	0 C	-	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS8342TT11BGD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	565 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	-	36 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8342TT11BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGT-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS816118DGT-250V	250 MHz	-	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	QFP	QFP,	-	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.26	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816118DGT	-	-	3A991.B.2.B	Synchronous Burst	-	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	-	compliant	100	R-PQFP-G100	-	2 V	-	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	18	-	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	CACHE SRAM	-	SRAM	-	-
GS816118DGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGT-200 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS816118DGT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	195 mA	6.5 ns	-	1 M x 18	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS816118DGT-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D19BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	300 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8182D19BD	-	-	-	SigmaQuad II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	500 mA	-	-	1 M x 18	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS8182D19BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84032CB-166 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 32 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84032CB-166	166 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.74	-	No	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS84032CB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	135 mA, 160 mA	7 ns	-	128 k x 32	-	1.99 mm	32	-	-	-	-	4194304 bit	-	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS84032CB-166 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84036CGB-150 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 36 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84036CGB-150	150 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.17	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS84036CGB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	130 mA, 140 mA	7.5 ns	-	128 k x 36	-	1.99 mm	36	-	-	-	-	4718592 bit	-	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS84036CGB-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84032CGT-250 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 32 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	-	-	-	72	-	Parallel	-	-	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS84032CGT	-	-	-	Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	155 mA, 195 mA	5.5 ns	-	128 k x 32	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS84032CGT-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84018CGB-200 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 256K x 18 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84018CGB-200	200 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.66	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS84018CGB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	130 mA, 155 mA	6.5 ns	-	256 k x 18	-	1.99 mm	18	-	-	-	-	4718592 bit	-	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS84018CGB-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84018CGT-150I Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 256K x 18 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	YES	100	7.5 ns	-	-	-	72	GSI TECHNOLOGY	Parallel	-	GS84018CGT-150I	150 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	3	-	SMD/SMT	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	-	NOT SPECIFIED	5.66	Details	Yes	-	3.6 V	2.3 V	3.3 V	-	SyncBurst	-	-	-	Tray	GS84018CGT	-	-	3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	-	-	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	-	R-PQFP-G100	-	3.6 V	-	INDUSTRIAL	3 V	4 Mbit	-	SYNCHRONOUS	140 mA, 150 mA	7.5 ns	-	256 k x 18	-	1.6 mm	18	-	-	-	-	4718592 bit	-	PARALLEL	-	CACHE SRAM	-	-	20 mm	14 mm
GS84018CGT-150I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672T18BGE-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	300 MHz	-	-	+ 85 C	DDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II	-	-	-	Tray	GS8672T18BGE	-	-	-	SigmaDDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	910 mA	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672T18BGE-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832236AD-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	4	-	230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS832236AD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS840Z18CGT-200 Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX18, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	7 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	200 MHz	-	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS840Z18CGT-200	200 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	NBT SRAM	-	-	-	Tray	GS840Z18CGT	-	-	3A991.B.2.B	NBT Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3,3.3 V	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	130 mA, 155 mA	6.5 ns	-	256 k x 18	3-STATE	1.6 mm	18	-	SRAM	-	0.025 A	4718592 bit	-	PARALLEL	COMMON	ZBT SRAM	3.14 V	SRAM	20 mm	14 mm
GS840Z18CGT-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182Q36BGD-167 Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.5 ns	GSI Technology	-	DDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182Q36BGD-167	167 MHz	167 MHz	-	+ 70 C	DDR	-	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.19	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 70 °C	Tray	GS8182Q36BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	485 mA	-	Pipelined	512 k x 36	-	1.4 mm	36	18 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182Q36BGD-167 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832136AD-200 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832136AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	5.16	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832136AD	-	-	3A991.B.2.B	Pipeline/Flow Through	-	PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	-	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
GS832136AD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8672Q19BE-333,GS8672D37BE-450,GS8672Q20BE-500I,GS74117AGX-10,GS8342DT11BGD-400.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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