Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page28

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Data Rate	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Data Rate	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8161Z32DGD-150IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX32, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8161Z32DGD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	195 mA, 210 mA	7.5 ns	-	Flow-Through/Pipelined	512 k x 32	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8161Z32DGD-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z36DD-333IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	-	NBT SRAM	1.8, 2.5 V	-	-40 to 100 °C	Tray	GS8161Z36DD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	-	-	260 mA, 330 mA	5@Flow-Through/3@Pip	-	-	512 k x 36	-	-	-	19 Bit	SRAM	-	-	18	-	-	-	-	-	SRAM	-	-
GS8161Z36DD-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832272GC-133I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX72, 8.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-209	YES	209	8.5 ns	GSI Technology	133 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832272GC-133I	133 MHz	-	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	72 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS832272GC	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	TIN SILVER COPPER	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	8	SYNCHRONOUS	220 mA, 255 mA	8.5 ns	-	Flow-Through/Pipelined	512 k x 72	3-STATE	1.7 mm	72	-	SRAM	36 Mbit	0.08 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.38 V	SRAM	22 mm	14 mm
GS832272GC-133I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q37BE-375M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	375 MHz	-	-	+ 125 C	QDR-II	-	- 55 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672Q37BE	-	-	-	SigmaQuad-II+ ECCRAM	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	-	-	-	-	2 M x 36	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q37BE-375M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8640Z36GT-167V Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX36, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	4 Weeks	TQFP-100	YES	100	8 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640Z36GT-167V	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.36	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640Z36GT	e3	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	-	COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	220 mA, 270 mA	8 ns	-	Flow-Through/Pipelined	2 M x 36	-	1.6 mm	36	21 Bit	SRAM	72 Mbit	-	75497472 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS8640Z36GT-167V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT37E-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302TT37E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	1.2 A	-	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302TT37E-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z32CGD-150 Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX32, 7.5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	100	7.5 ns	-	-	-	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z32CGD-150	150 MHz	-	-	+ 70 C	-	-	0 C	-	3	-	SMD/SMT	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.29	-	Yes	-	3.6 V	2.3 V	2.5 V	-	-	-	-	-	-	GS881Z32CGD	e1	Yes	3A991.B.2.B	-	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	-	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	9 Mbit	-	SYNCHRONOUS	130 mA, 140 mA	7.5 ns	-	-	256KX32	-	1.6 mm	32	-	-	-	-	8388608 bit	-	PARALLEL	-	ZBT SRAM	-	-	20 mm	14 mm
GS881Z32CGD-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT10GE-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	DDR	-	-	Parallel	-	-	350 MHz	350 MHz	1.9 V	+ 85 C	-	1.7 V	- 40 C	-	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	810 mA	-	-	Pipelined	16 M x 9	-	-	-	23 Bit	-	144 Mb	-	-	Industrial	-	-	-	-	-	-	-
GS81302TT10GE-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T37GE-400I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	400 MHz	400 MHz	-	+ 85 C	DDR-II	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T37GE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	1.005 A	-	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302T37GE-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T06GE-500I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.37 ns	GSI Technology	-	DDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302T06GE-500I	500 MHz	500 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	8 Bit	16 MWords	16000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.33	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T06GE	e1	Yes	3A991.B.2.B	SigmaDDR-II+	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	1	SYNCHRONOUS	1.08 A	-	-	Pipelined	16 M x 8	-	1.5 mm	8	23 Bit	SRAM	144 Mbit	-	134217728 bit	Industrial	PARALLEL	-	DDR SRAM	-	SRAM	17 mm	15 mm
GS81302T06GE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302Q37GE-250I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	250 MHz	250 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302Q37GE	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.14 A	-	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302Q37GE-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT38E-450M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 125 C	QDR-II	1.7 V	- 55 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Military grade	-55 to 125 °C	Tray	GS81302DT38E	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	-	-	-	Pipelined	4 M x 36	-	-	-	20 Bit	SRAM	144 Mbit	-	-	Military	-	-	-	-	SRAM	-	-
GS81302DT38E-450M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT11E-450M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	-	+ 125 C	DDR-II	-	- 55 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Military grade	-55 to 125 °C	Tray	GS81302TT11E	-	-	-	SigmaDDR-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	-	-	-	Pipelined	16 M x 9	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Military	-	-	-	-	SRAM	-	-
GS81302TT11E-450M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D18GE-350 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	QDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302D18GE	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	940 mA	-	-	Pipelined	8 M x 18	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302D18GE-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8673EQ18BGK-625I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.4ns, CMOS, PBGA260, BGA-260 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-260	YES	260	0.4 ns	GSI Technology	-	QDR	8	GSI TECHNOLOGY	Parallel	GSI Technology	GS8673EQ18BGK-625I	625 MHz	625/400 MHz	1.4 V	+ 100 C	QDR-III	1.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	-	-	PLASTIC/EPOXY	HBGA	HBGA,	-	RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG	Active	-	NOT SPECIFIED	5.72	Details	Yes	BGA	1.4 V	1.3 V	1.35 V	Synchronous	SigmaQuad-IIIe	1.3500 V	Industrial grade	-40 to 85 °C	Tray	GS8673EQ18BGK	-	-	3A991.B.2.B	SigmaQuad-IIIe B2	-	-	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	260	R-PBGA-B260	-	1.4 V	-	-	1.3 V	72 Mbit	-	SYNCHRONOUS	2.11 A	-	-	Pipelined	4 M x 18	-	2.3 mm	18	21 Bit	SRAM	72 Mbit	-	75497472 bit	Industrial	PARALLEL	-	DDR SRAM	-	SRAM	22 mm	14 mm
GS8673EQ18BGK-625I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302Q19E-250I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302Q19E-250I	250 MHz	250 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.33	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302Q19E	-	No	3A991.B.2.B	SigmaQuad-II+ B2	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	1.07 A	-	-	Pipelined	8 M x 18	-	1.5 mm	18	22 Bit	SRAM	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	QDR SRAM	-	SRAM	17 mm	15 mm
GS81302Q19E-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T36BD-250 Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	YES	165	0.45 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS8182T36BD-250	-	-	-	-	-	-	-	-	-	-	-	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	-	No	-	-	-	1.8 V	-	-	-	-	-	-	-	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	-	-	SYNCHRONOUS	-	-	-	-	512KX36	-	1.4 mm	36	-	-	-	-	18874368 bit	-	PARALLEL	-	DDR SRAM	-	-	15 mm	13 mm
GS8182T36BD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D08E-375 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 70 C	QDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302D08E	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	995 mA	-	-	Pipelined	16 M x 8	-	-	-	22 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302D08E-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT37E-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	DDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302TT37E-450	450 MHz	450 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	4000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.06	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302TT37E	-	No	3A991.B.2.B	SigmaDDR-II+ B2	-	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	144 Mbit	1	SYNCHRONOUS	1.19 A	-	-	Pipelined	4 M x 36	-	1.5 mm	36	21 Bit	SRAM	144 Mbit	-	150994944 bit	Commercial	PARALLEL	-	DDR SRAM	-	SRAM	17 mm	15 mm
GS81302TT37E-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8673ED18BGK-500I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.5V 4M x 18 72M Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-260	YES	260	-	-	-	QDR	8	GSI TECHNOLOGY	Parallel	-	GS8673ED18BGK-500I	500 MHz	500 MHz	1.4 V	+ 100 C	DDR	1.25 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	-	-	PLASTIC/EPOXY	HBGA	HBGA,	-	RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG	Active	-	NOT SPECIFIED	5.73	Details	Yes	BGA	1.4 V	1.25 V	1.3 V	Synchronous	SigmaQuad-IIIe	1.3500 V	Industrial grade	-40 to 85 °C	Tray	GS8673ED18BGK	-	-	3A991.B.2.B	SigmaQuad-IIIe B4	-	IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	260	R-PBGA-B260	-	1.4 V	-	-	1.25 V	72 Mbit	1	SYNCHRONOUS	1.77 A	-	1 Gb/s	Pipelined	4 M x 18	-	2.3 mm	18	20 Bit	-	72 Mbit	-	75497472 bit	Industrial	PARALLEL	-	DDR SRAM	-	-	22 mm	14 mm
GS8673ED18BGK-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8161Z32DGD-150IV,GS8161Z36DD-333IV,GS832272GC-133I,GS8672Q37BE-375M,GS8640Z36GT-167V.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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