Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page29

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS81302DT37GE-350I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	-	-	QDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302DT37GE-350I	350 MHz	350 MHz	1.9 V	+ 85 C	-	1.7 V	- 40 C	-	3	Surface Mount	SMD/SMT	36 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.19	-	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	GS81302DT37GE	e1	Yes	3A991.B.2.B	-	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	-	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	1.065 A	-	Pipelined	4MX36	-	1.5 mm	36	20 Bit	-	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	QDR SRAM	-	-	17 mm	15 mm
GS81302DT37GE-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8640FZ36GT-7.5I Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640FZ36GT-7.5I	-	133.3 MHz	3.6 V	+ 85 C	SDR	3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.36	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	3.3000 V	Industrial grade	-40 to 85 °C	Tray	GS8640FZ36GT	e3	Yes	3A991.B.2.B	NBT Flow Through	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.75 V	-	INDUSTRIAL	2.25 V	72 Mbit	4	SYNCHRONOUS	250 mA	7.5 ns	Flow-Through	2 M x 36	-	1.6 mm	36	21 Bit	SRAM	72 Mbit	-	75497472 bit	Industrial	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS8640FZ36GT-7.5I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT07GE-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302TT07GE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	1.01 A	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302TT07GE-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DGD-333I Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 4.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS816218DGD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	2	-	260 mA, 305 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS816218DGD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT11BGD-500 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	500 MHz	500 MHz	-	+ 70 C	-	-	0 C	-	-	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS8662DT11BGD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	890 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	-	72 Mb	-	-	Commercial	-	-	-	-	-	-	-
GS8662DT11BGD-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT06BD-400I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	400 MHz	400 MHz	1.9 V	+ 85 C	-	1.7 V	- 40 C	-	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	GS8662DT06BD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	745 mA	-	Pipelined	8 M x 8	-	-	-	21 Bit	-	72 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS8662DT06BD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q36BGD-357 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	357 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662Q36BGD-357	357 MHz	357 MHz	-	+ 70 C	DDR	-	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.34	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662Q36BGD	-	-	3A991.B.2.B	SigmaQuad-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	1.195 A	-	Pipelined	2 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	72 Mbit	-	75497472 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8662Q36BGD-357 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS882Z36CB-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 5.5ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	42	-	Parallel	GSI Technology	-	250 MHz	-	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CB	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	9 Mbit	4	-	140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS882Z36CB-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662T38BD-450M Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 125 C	DDR-II	1.7 V	- 55 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Military grade	-55 to 125 °C	Tray	GS8662T38BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	-	-	Pipelined	2 M x 36	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Military	-	-	-	-	SRAM	-	-
GS8662T38BD-450M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT19E-350I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302DT19E-350I	350 MHz	350 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.33	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302DT19E	-	No	3A991.B.2.B	SigmaQuad-II+ B4	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	950 mA	-	Pipelined	8 M x 18	-	1.5 mm	18	21 Bit	SRAM	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	QDR SRAM	-	SRAM	17 mm	15 mm
GS81302DT19E-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T10E-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T10E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	810 mA	-	Pipelined	16 M x 9	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302T10E-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS864418GE-133IV Anlielectronics Тип	GSI Technology	Cache SRAM, 4MX18, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	133 MHz	-	2, 2.7 V	+ 85 C	-	1.7, 2.3 V	- 40 C	-	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	-	1.8, 2.5 V	Industrial grade	-40 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	235 mA, 285 mA	8.5 ns	Flow-Through/Pipelined	4 M x 18	-	-	-	-	-	72 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS864418GE-133IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q19BGD-357I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	357 MHz	357 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662Q19BGD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	995 mA	-	Pipelined	4 M x 18	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662Q19BGD-357I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8642Z72C-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX72, 7.5ns, CMOS, PBGA209, 22 X 14 MM, 1 MM PITCH, BGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-209	YES	209	7.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z72C-200I	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	72 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	4.79	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z72C	-	No	3A991.B.2.B	NBT Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit	8	SYNCHRONOUS	295 mA, 405 mA	7.5 ns	Flow-Through/Pipelined	1 M x 72	3-STATE	1.7 mm	72	20 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
GS8642Z72C-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T11E-400 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	400 MHz	400 MHz	-	+ 70 C	DDR-II	-	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302T11E	-	-	-	SigmaDDR-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	895 mA	-	Pipelined	16 M x 9	-	-	-	-	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302T11E-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662S08BD-350 Anlielectronics Тип	GSI Technology	Standard SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662S08BD-350	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	8000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.79	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662S08BD	-	-	3A991.B.2.B	SigmaSIO DDR-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	695 mA	-	Pipelined	8 M x 8	-	1.4 mm	8	22 Bit	SRAM	72 Mbit	-	67108864 bit	Commercial	PARALLEL	-	STANDARD SRAM	-	SRAM	15 mm	13 mm
GS8662S08BD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS882Z18CGB-333I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX18, 4.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	42	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS882Z18CGB	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	9 Mbit	2	-	185 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	512 k x 18	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS882Z18CGB-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T09BD-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	375 MHz	1.9 V	-	-	1.7 V	-	-	-	-	-	9 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	-	-	-	-	-	1.8000 V	-	-40 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	-	-	-	0.45	-	-	-	-	-	-	-	-	-	18	-	-	-	-	-	-	-	-
GS8182T09BD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E32CGT-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	-	-	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	-	SMD/SMT	32 Bit	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	-	0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	-	SYNCHRONOUS	125 mA, 150 mA	6.5@Flow-Through/3@P	-	256 k x 32	3-STATE	1.6 mm	32	-	SRAM	-	0.025 A	8	-	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
GS880E32CGT-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E18DGT-333IV Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8161E18DGT	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	2	-	240 mA, 300 mA	5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8161E18DGT-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS81302DT37GE-350I,GS8640FZ36GT-7.5I,GS81302TT07GE-450I,GS816218DGD-333I,GS8662DT11BGD-500.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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