Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page30

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS880E36CGT-150IV Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	-	-	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-150IV	150 MHz	-	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	-	SMD/SMT	36 Bit	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	9 Mbit	-	SYNCHRONOUS	130 mA, 145 mA	7.5@Flow-Through/3.8	-	256 k x 36	3-STATE	1.6 mm	36	-	SRAM	-	0.045 A	9	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
GS880E36CGT-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E32CGT-150V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	-	-	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	-	SMD/SMT	32 Bit	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	-	0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	-	SYNCHRONOUS	110 mA, 125 mA	7.5@Flow-Through/3.8	-	256 k x 32	3-STATE	1.6 mm	32	-	SRAM	-	0.025 A	8	-	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
GS880E32CGT-150V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT06BD-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	500 MHz	500 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662DT06BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	900 mA	-	Pipelined	8 M x 8	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662DT06BD-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E32CGT-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 4.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT	-	-	-	DCD	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	9 Mbit	2	-	180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32	-	-	-	18 Bit	SRAM	8 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS880E32CGT-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T20BD-500 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	-	500 MHz	DDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342T20BD-500	500 MHz	500 MHz	1.9 V	+ 70 C	-	1.7 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.35	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS8342T20BD	e0	-	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	1	SYNCHRONOUS	730 mA	-	Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	-	36 Mbit	0.24 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	-	15 mm	13 mm
GS8342T20BD-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T37E-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	10	-	Parallel	GSI Technology	-	333 MHz	-	-	+ 70 C	DDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II+	-	-	-	Tray	GS81302T37E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	144 Mbit	-	-	850 mA	-	-	4 M x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS81302T37E-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E32DGT-333 Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	333 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS8161E32DGT	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	260 mA, 315 mA	4.5 ns	-	512 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS8161E32DGT-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8128418B-200I Anlielectronics Тип	GSI Technology	Cache SRAM, 8MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-119	YES	119	7.5 ns	-	-	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8128418B-200I	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	-	2.3, 3 V	- 40 C	-	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.19	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Industrial grade	-40 to 85 °C	-	GS8128418B	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	INDUSTRIAL	2.3 V	144 Mbit	2	SYNCHRONOUS	360 mA, 435 mA	7.5 ns	Flow-Through/Pipelined	8 M x 18	-	1.99 mm	18	23 Bit	-	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS8128418B-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E36CD-250I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS881E36CD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	175 mA, 215 mA	5.5 ns	-	256 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS881E36CD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T37E-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302T37E	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	1.19 A	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302T37E-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT11BD-450M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 125 C	DDR	1.7 V	- 55 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Military grade	-55 to 125 °C	Tray	GS8662TT11BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	-	-	Pipelined	8 M x 9	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Military	-	-	-	-	SRAM	-	-
GS8662TT11BD-450M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81284Z18GB-167 Anlielectronics Тип	GSI Technology	ZBT SRAM, 8MX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	10	-	Parallel	GSI Technology	-	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS81284Z18GB	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	144 Mbit	2	-	315 mA, 365 mA	8 ns	Flow-Through/Pipelined	8 M x 18	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81284Z18GB-167 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E32CGD-200 Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS881E32CGD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	140 mA, 170 mA	6.5 ns	-	256 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS881E32CGD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T08GE-375 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302T08GE	-	-	-	SigmaDDR-II B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	845 mA	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302T08GE-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T36BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T36BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS71108AU-7 Anlielectronics Тип	GSI Technology	Standard SRAM, 128KX8, 7ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	-	YES	48	7 ns	GSI Technology	-	-	240	GSI TECHNOLOGY	-	GSI Technology	GS71108AU-7	-	-	3.6 V	-	-	3 V	-	-	3	Surface Mount	-	8 Bit	128 kWords	128000	70 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.22	-	No	FBGA	-	-	3.3 V	Asynchronous	-	3.3000 V	Commercial grade	0 to 70 °C	-	GS71108AGU	-	No	3A991.B.2.B	-	-	-	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.6 V	-	COMMERCIAL	3 V	-	1	ASYNCHRONOUS	-	-	-	128KX8	-	1.2 mm	8	17 Bit	SRAM	1 Mbit	-	1048576 bit	Commercial	PARALLEL	-	STANDARD SRAM	-	SRAM	8 mm	6 mm
GS71108AU-7 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S36BGD-400I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	DDR	-	-	Parallel	-	-	400 MHz	400 MHz	1.9 V	+ 85 C	-	1.7 V	- 40 C	-	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	915 mA	-	Pipelined	1 M x 36	-	-	-	19 Bit	-	36 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS8342S36BGD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z18DGT-375I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 4.2ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8161Z18DGT	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	2	-	270 mA, 340 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8161Z18DGT-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT19GE-400I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302DT19GE	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.065 A	-	Pipelined	8 M x 18	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302DT19GE-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8642Z36B-300I Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology	300 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8642Z36B-300I	300 MHz	181.8@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.18	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8642Z36B	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit	4	SYNCHRONOUS	320 mA, 440 mA	5.5 ns	Flow-Through/Pipelined	2 M x 36	3-STATE	1.99 mm	36	21 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
GS8642Z36B-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS880E36CGT-150IV,GS880E32CGT-150V,GS8662DT06BD-500I,GS880E32CGT-333,GS8342T20BD-500.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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