Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page35

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width
	Mfr. Тип GS8320E36AGT-250IV Anlielectronics Тип	GSI Technology	SRAM, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	TQFP-100	-	-	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	250 MHz	2.7, 3.6 V	+ 85 C	SDR	-	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8320E36AGT	-	-	-	DCD Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	100	-	-	-	-	-	-	36 Mbit	4	-	-	260 mA, 315 mA	5.5 ns	-	-	Flow-Through/Pipelined	1 M x 36	-	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8320E36AGT-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AB-375 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	-	YES	-	119	4.2 ns	-	-	375 MHz	SDR	-	GSI TECHNOLOGY	-	GSI Technology	GS832218AB-375	-	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	-	-	-	2.3, 3 V	-	-	-	Surface Mount	-	18 Bit	2 MWords	2000000	70 °C	-	-	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	-	NOT SPECIFIED	5.11	-	No	FBGA	-	-	2.5 V	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 85 °C	-	-	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	-	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	-	2	SYNCHRONOUS	-	0.3 mA	-	-	-	Flow-Through/Pipelined	2MX18	3-STATE	1.99 mm	18	-	21 Bit	-	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	-	-	22 mm	14 mm
GS832218AB-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT06BGD-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR	-	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662TT06BGD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	-	600 mA	-	-	-	Pipelined	8 M x 8	-	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8662TT06BGD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E36CD-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	SDR	66	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	-	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	9 Mbit	4	-	-	140 mA, 180 mA	5.5 ns	-	-	Flow-Through/Pipelined	256 k x 36	-	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS881E36CD-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q10BD-200 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	200 MHz	200 MHz	1.9 V	+ 70 C	DDR	-	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662Q10BD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	-	600 mA	-	-	-	Pipelined	8 M x 9	-	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS8662Q10BD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D36GE-350 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	-	-	QDR	-	-	Parallel	-	-	350 MHz	350 MHz	1.9 V	+ 70 C	-	-	1.7 V	0 C	-	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	-	1.055 A	-	-	-	Pipelined	4 M x 36	-	-	-	-	20 Bit	-	144 Mbit	-	-	Commercial	-	-	-	-	-	-	-	-
GS81302D36GE-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AD-200IV Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	BGA-165	YES	-	165	6.5 ns	-	GSI Technology	200 MHz	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832218AD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	-	1.7, 2.3 V	- 40 C	Yes	-	-	SMD/SMT	18 Bit	2097152 words	2000000	85 °C	-40 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	NOT SPECIFIED	5.11	-	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	-	-40 to 100 °C	Tray	GS832218AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	-	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	-	SYNCHRONOUS	-	215 mA, 250 mA	6.5@Flow-Through/3@P	-	-	-	2 M x 18	3-STATE	1.4 mm	18	-	-	SRAM	-	0.04 A	36	-	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	-	15 mm	13 mm
GS832218AD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E32CGD-150IV Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	BGA-165	YES	-	165	7.5 ns	-	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-150IV	150 MHz	-	2, 2.7 V	+ 85 C	SDR	-	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	NOT SPECIFIED	5.16	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	-	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	-	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	-	130 mA, 145 mA	7.5 ns	-	-	Flow-Through/Pipelined	256 k x 32	-	1.4 mm	32	-	-	SRAM	8 Mbit	-	8388608 bit	Industrial	PARALLEL	-	CACHE SRAM	-	SRAM	-	15 mm	13 mm
GS881E32CGD-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321Z36AGD-400I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	BGA-165	YES	-	165	-	-	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321Z36AGD-400I	400 MHz	-	2.7, 3.6 V	+ 85 C	SDR	-	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	-	-	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	NOT SPECIFIED	5.3	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8321Z36AGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	Memory & Data Storage	CMOS	-	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	-	-	2.3 V	36 Mbit	4	SYNCHRONOUS	-	305 mA, 415 mA	4 ns	-	-	Flow-Through/Pipelined	1 M x 36	-	1.4 mm	36	-	-	SRAM	36 Mbit	-	37748736 bit	Industrial	PARALLEL	-	ZBT SRAM	-	SRAM	-	15 mm	13 mm
GS8321Z36AGD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88132CGD-300I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	-	YES	-	165	-	-	-	-	SDR	-	GSI TECHNOLOGY	-	GSI Technology	GS88132CGD-300I	-	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	-	-	-	2.3, 3 V	-	-	-	Surface Mount	-	32 Bit	256 kWords	256000	85 °C	-40 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	NOT SPECIFIED	5.16	-	Yes	FBGA	-	-	3.3 V	Synchronous	-	2.5, 3.3 V	Industrial grade	-40 to 85 °C	-	-	-	-	3A991.B.2.B	-	-	ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	-	CMOS	-	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	3.6 V	-	INDUSTRIAL	3 V	-	1	SYNCHRONOUS	-	-	-	-	-	Flow-Through/Pipelined	256KX32	-	1.4 mm	32	-	17 Bit	-	9 Mbit	-	8388608 bit	Industrial	SERIAL	-	CACHE SRAM	-	-	-	15 mm	13 mm
GS88132CGD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D18GE-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	Surface Mount	BGA-165	-	165-FPBGA (15x17)	-	-	GS81302D18	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	QDR-II	GSI Technology Inc.	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	Tray	-	-	-	-	-	-	-	-	Active	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302D18GE	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	SRAM - Quad Port, Synchronous	1.7V ~ 1.9V	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	350 MHz	950 mA	-	SRAM	Parallel	Pipelined	8 M x 18	-	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	8M x 18	-	-
GS81302D18GE-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E32CGD-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	SDR	66	-	Parallel	GSI Technology	-	200 MHz	-	2, 2.7 V	+ 70 C	SDR	-	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	9 Mbit	4	-	-	125 mA, 150 mA	6.5 ns	-	-	Flow-Through/Pipelined	256 k x 32	-	-	-	-	-	SRAM	8 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS881E32CGD-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342TT10BGD-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	-	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342TT10BGD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	-	670 mA	-	-	-	Pipelined	4 M x 9	-	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS8342TT10BGD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT11GE-450 Anlielectronics Тип	GSI Technology	QDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	QDR-II	-	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302DT11GE	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	-	1.175 A	-	-	-	Pipelined	16 M x 9	-	-	-	-	22 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS81302DT11GE-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8644Z18E-166 Anlielectronics Тип	GSI Technology	ZBT SRAM, 4MX18, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	BGA-165	YES	-	165	7 ns	-	GSI Technology	166 MHz	SDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8644Z18E-166	166 MHz	142.8@Flow-Through/166@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	-	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	70 °C	-	-	PLASTIC/EPOXY	BGA	BGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY	Active	BGA	-	NOT SPECIFIED	5.14	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8644Z18E	-	No	3A991.B.2.B	NBT	-	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	-	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	-	240 mA, 285 mA	8.5 ns	-	-	Flow-Through/Pipelined	4 M x 18	3-STATE	1.5 mm	18	-	22 Bit	SRAM	72 Mbit	0.12 A	75497472 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	-	17 mm	15 mm
GS8644Z18E-166 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT37BGD-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR	-	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662TT37BGD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	-	910 mA	-	-	-	Pipelined	2 M x 36	-	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8662TT37BGD-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D11E-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.37ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	-	YES	-	165	0.37 ns	-	GSI Technology	-	-	10	GSI TECHNOLOGY	-	GSI Technology	GS81302D11E-450I	-	450 MHz	1.9 V	-	-	-	1.7 V	-	Yes	-	-	-	9 Bit	16777216 words	16000000	-	-	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	-	NOT SPECIFIED	5.06	-	No	FBGA	-	-	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302D11E	-	-	3A991.B.2.B	-	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	-	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	-	1.7 V	-	-	SYNCHRONOUS	-	-	0.45	-	-	-	16MX9	-	1.5 mm	9	-	-	SRAM	-	-	144	Industrial	PARALLEL	-	DDR SRAM	-	SRAM	-	17 mm	15 mm
GS81302D11E-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662R08BGD-333 Anlielectronics Тип	GSI Technology	Standard SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	BGA-165	-	-	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 70 C	DDR	-	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662R08BGD	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	1	-	-	535 mA	-	-	-	Pipelined	8 M x 8	-	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS8662R08BGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS864418GE-225IV Anlielectronics Тип	GSI Technology	Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	BGA-165	YES	-	165	6.5 ns	-	GSI Technology	-	SDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS864418GE-225IV	225 MHz	153.8@Flow-Through/225@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	-	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	-	NOT SPECIFIED	5.15	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864418GE	e1	Yes	3A991.B.2.B	Synchronous Burst	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	-	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	-	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	-	275 mA, 370 mA	6.5 ns	-	-	Flow-Through/Pipelined	4 M x 18	-	1.4 mm	18	-	22 Bit	SRAM	72 Mbit	-	75497472 bit	Industrial	PARALLEL	-	CACHE SRAM	-	SRAM	-	17 mm	15 mm
GS864418GE-225IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880Z36CGT-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, CMOS, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	TQFP-100	-	-	-	-	-	GSI Technology	-	SDR	66	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	-	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880Z36CGT	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	100	-	-	-	-	-	-	9 Mbit	1	-	-	140 mA, 180 mA	5.5 ns	-	-	Flow-Through/Pipelined	256 k x 36	-	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS880Z36CGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8320E36AGT-250IV,GS832218AB-375,GS8662TT06BGD-350I,GS881E36CD-250V,GS8662Q10BD-200.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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