Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page37

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS816136DD-375I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4.2ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	-	2.3, 3 V	- 40 C	-	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	-	2.5, 3.3 V	Industrial grade	-40 to 85 °C	-	GS816136DD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	-	18 Mbit	-	Industrial	-	-	-	-	-	-	-
GS816136DD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302S08E-375 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	DDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302S08E-375	375 MHz	375 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	16000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.33	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302S08E	-	No	3A991.B.2.B	SigmaSIO DDR-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	995 mA	-	Pipelined	16 M x 8	-	1.5 mm	8	23 Bit	SRAM	144 Mbit	134217728 bit	Commercial	PARALLEL	-	DDR SRAM	-	SRAM	17 mm	15 mm
GS81302S08E-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T38GE-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302T38GE	-	-	-	SigmaDDR-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	144 Mbit	1	-	1.19 A	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	Commercial	-	-	-	-	SRAM	-	-
GS81302T38GE-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662T07BD-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, FBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662T07BD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	600 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8662T07BD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D09BD-375M Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182D09BD-375M	375 MHz	375 MHz	-	+ 125 C	DDR	-	- 55 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	2 MWords	2000000	125 °C	-55 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.75	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Military grade	-55 to 125 °C	Tray	GS8182D09BD	-	-	3A991.B.2.B	SigmaQuad-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	MILITARY	1.7 V	18 Mbit	2	SYNCHRONOUS	730 mA	-	Pipelined	2 M x 9	-	1.4 mm	9	19 Bit	SRAM	18 Mbit	18874368 bit	Military	PARALLEL	-	QDR SRAM	-	SRAM	15 mm	13 mm
GS8182D09BD-375M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS864236GB-200 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	-	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864236GB-200	200 MHz	-	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.18	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864236GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	72 Mbit	4	SYNCHRONOUS	230 mA, 310 mA	7.5 ns	Flow-Through/Pipelined	2 M x 36	-	1.99 mm	36	-	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	-	CACHE SRAM	-	SRAM	22 mm	14 mm
GS864236GB-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342DT20BD-550 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	550 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342DT20BD-550	550 MHz	550 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342DT20BD	e0	No	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	-	-	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	OTHER	1.7 V	36 Mbit	2	SYNCHRONOUS	940 mA	-	Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342DT20BD-550 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81284Z18B-167 Anlielectronics Тип	GSI Technology	ZBT SRAM, 8MX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-119	YES	119	8 ns	-	-	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS81284Z18B-167	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C	-	2.3, 3 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.21	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 70 °C	-	GS81284Z18B	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	144 Mbit	2	SYNCHRONOUS	315 mA, 365 mA	8 ns	Flow-Through/Pipelined	8 M x 18	-	1.99 mm	18	23 Bit	-	144 Mbit	150994944 bit	Commercial	PARALLEL	-	ZBT SRAM	-	-	22 mm	14 mm
GS81284Z18B-167 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T18BD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T18BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662QT10BGD-200 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	200 MHz	200 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662QT10BGD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	600 mA	-	Pipelined	8 M x 9	-	-	-	22 Bit	SRAM	72 Mbit	-	Commercial	-	-	-	-	SRAM	-	-
GS8662QT10BGD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D19BD-400 Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	-	+ 70 C	DDR	-	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342D19BD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	705 mA	-	Pipelined	2 M x 18	-	-	-	19 Bit	SRAM	36 Mbit	-	Commercial	-	-	-	-	SRAM	-	-
GS8342D19BD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z32DD-400I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX32, 4ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	32 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8161Z32DD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	300 mA, 385 mA	4 ns	Flow-Through/Pipelined	512 k x 32	-	-	-	19 Bit	SRAM	18 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8161Z32DD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT06GE-350 Anlielectronics Тип	GSI Technology	QDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	QDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302DT06GE	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	940 mA	-	Pipelined	16 M x 8	-	-	-	22 Bit	SRAM	144 Mbit	-	Commercial	-	-	-	-	SRAM	-	-
GS81302DT06GE-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z32CGT-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX32, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z32CGT-250V	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.29	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CGT	e3	Yes	3A991.B.2.B	NBT	Matte Tin (Sn)	IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	-	COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32	-	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS881Z32CGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302R18GE-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302R18GE	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	855 mA	-	Pipelined	8 M x 18	-	-	-	23 Bit	SRAM	144 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS81302R18GE-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321E18AD-150IV Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	150 MHz	133@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD	-	-	-	Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	205 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	21 Bit	SRAM	36 Mbit	-	Industrial	-	-	-	-	SRAM	-	-
GS8321E18AD-150IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8673ET36BGK-550 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.4ns, CMOS, PBGA260, BGA-260 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	DDR	-	-	-	-	-	-	550/375 MHz	1.4 V	-	-	1.25 V	-	-	-	Surface Mount	-	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	BGA	-	-	-	Synchronous	-	1.3500 V	Commercial grade	0 to 70 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	260	-	-	-	-	-	-	-	-	-	-	-	Pipelined	-	-	-	-	-	-	72 Mbit	-	Commercial	-	-	-	-	-	-	-
GS8673ET36BGK-550 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T36E-300 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302T36E	-	-	-	SigmaDDR-II B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	780 mA	-	Pipelined	4 M x 36	-	-	-	22 Bit	SRAM	144 Mbit	-	Commercial	-	-	-	-	SRAM	-	-
GS81302T36E-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8128418B-167 Anlielectronics Тип	GSI Technology	Cache SRAM, 8MX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-119	YES	119	8 ns	GSI Technology	-	SDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS8128418B-167	167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.22	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8128418B	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	144 Mbit	2	SYNCHRONOUS	315 mA, 365 mA	8 ns	Flow-Through/Pipelined	8 M x 18	-	1.99 mm	18	23 Bit	SRAM	144 Mbit	150994944 bit	Commercial	PARALLEL	-	CACHE SRAM	-	SRAM	22 mm	14 mm
GS8128418B-167 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS882Z36CGD-200IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CGD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z36CGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	-	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	-	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	-	ZBT SRAM	-	SRAM	15 mm	13 mm
GS882Z36CGD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS816136DD-375I,GS81302S08E-375,GS81302T38GE-450,GS8662T07BD-350I,GS8182D09BD-375M.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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