Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page39

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8161Z36DD-400 Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 4ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161Z36DD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8161Z36DD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816036DGT-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	4.5 ns	GSI Technology	-	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816036DGT-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS816036DGT	-	-	3A991.B.2.B	Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	-	2.7 V	-	COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	260 mA, 315 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36	-	1.6 mm	36	20 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	CACHE SRAM	-	SRAM	20 mm	14 mm
GS816036DGT-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832272C-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX72, 6.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-209	-	-	-	GSI Technology	-	SDR	14	-	Parallel	GSI Technology	-	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	72 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	-	-	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS832272C	-	-	-	Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	209	-	-	-	-	-	-	36 Mbit	8	-	275 mA, 380 mA	6.5 ns	Flow-Through/Pipelined	512 k x 72	-	-	-	19 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS832272C-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E18CGD-200I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS881E18CGD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	150 mA, 175 mA	6.5 ns	-	512 k x 18	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS881E18CGD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT11GE-500 Anlielectronics Тип	GSI Technology	QDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	10	-	Parallel	GSI Technology	-	500 MHz	-	1.9 V	+ 70 C	QDR-II	1.7 V	0 C	Yes	-	SMD/SMT	9 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302DT11GE	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	-	-	1.26 A	0.45	-	16 M x 9	-	-	-	-	SRAM	-	-	144	Commercial	-	-	-	-	SRAM	-	-
GS81302DT11GE-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816236DGB-333IV Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	21	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS816236DGB	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	18 Mbit	4	-	260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS816236DGB-333IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816136DGT-375I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4.2ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	375 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS816136DGT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	290 mA, 370 mA	4.2 ns	-	512 k x 36	-	-	-	-	SRAM	-	-	18	-	-	-	-	-	SRAM	-	-
GS816136DGT-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q09BD-250I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	250 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662Q09BD-250I	250 MHz	250 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.34	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662Q09BD	e0	No	3A991.B.2.B	SigmaQuad-II	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	730 mA	-	Pipelined	8 M x 9	3-STATE	1.4 mm	9	22 Bit	SRAM	72 Mbit	-	75497472 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8662Q09BD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT38E-500I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	500 MHz	500 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302TT38E	-	-	-	SigmaDDR-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	1.31 A	-	Pipelined	4 M x 36	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302TT38E-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q08BGD-333 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	-	-	Parallel	-	-	333 MHz	-	1.9 V	+ 70 C	-	1.7 V	0 C	-	-	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	-	-	920 mA	0.45	-	8 M x 8	-	-	-	-	-	-	-	72	Commercial	-	-	-	-	-	-	-
GS8662Q08BGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321Z36AD-333I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	-	-	Parallel	-	-	333 MHz	-	2.7, 3.6 V	+ 85 C	-	2.3, 3 V	- 40 C	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	-	-	2.5, 3.3 V	-	-40 to 100 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	-	-	280 mA, 365 mA	4.5@Flow-Through/2.5	-	1 M x 36	-	-	-	-	-	-	-	36	-	-	-	-	-	-	-	-
GS8321Z36AD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T38BD-550 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	550 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342T38BD-550	550 MHz	550 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.2	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342T38BD	e0	-	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	1	SYNCHRONOUS	1.04 A	-	Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.255 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342T38BD-550 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E32CD-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, 4.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	9 Mbit	4	-	180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32	-	-	-	18 Bit	SRAM	8 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS881E32CD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302S09GE-300 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302S09GE	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	815 mA	-	Pipelined	16 M x 9	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS81302S09GE-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302S09GE-333I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	9 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302S09GE	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	900 mA	-	Pipelined	16 M x 9	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302S09GE-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E36DD-400 Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8161E36DD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT11E-500 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	YES	165	0.45 ns	-	-	DDR	-	GSI TECHNOLOGY	-	GSI Technology	GS81302TT11E-500	-	500 MHz	1.9 V	-	-	1.7 V	-	-	Surface Mount	-	9 Bit	16 MWords	16000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.06	-	No	FBGA	-	-	1.8 V	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	No	3A991.B.2.B	-	-	PIPELINED ARCHITECTURE	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	-	1	SYNCHRONOUS	-	-	Pipelined	16MX9	-	1.5 mm	9	23 Bit	-	144 Mbit	-	150994944 bit	Commercial	PARALLEL	-	DDR SRAM	-	-	17 mm	15 mm
GS81302TT11E-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T18E-350M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	10	-	Parallel	GSI Technology	-	350 MHz	-	-	+ 125 C	DDR-II	-	- 55 C	Yes	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II	-	-	-	Tray	GS81302T18E	-	-	-	SigmaDDR-II B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	144 Mbit	-	-	-	-	-	8 M x 18	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS81302T18E-350M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182R18BD-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182R18BD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT38BD-550I Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	-	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662DT38BD-550I	550 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	SMD/SMT	-	2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.72	-	No	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II+	-	-	-	Tray	GS8662DT38BD	-	-	3A991.B.2.B	SigmaQuad-II+	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	1.9 V	-	INDUSTRIAL	1.7 V	72 Mbit	-	SYNCHRONOUS	1.285 A	-	-	2 M x 36	-	1.4 mm	36	-	SRAM	-	-	72	-	PARALLEL	-	QDR SRAM	-	SRAM	15 mm	13 mm
GS8662DT38BD-550I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8161Z36DD-400,GS816036DGT-333,GS832272C-250V,GS881E18CGD-200I,GS81302DT11GE-500.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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