| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипGS88136CD-200IVAnlielectronics Тип | GSI Technology |
Cache SRAM, 256KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | - | SDR | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88136CD-200IV | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.14 | - | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS88136CD | - | - | 3A991.B.2.B | Synchronous Burst | - | ALSO OPERATES AT 2.5V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | - | INDUSTRIAL | 1.7 V | 9 Mbit | 1 | SYNCHRONOUS | 145 mA, 170 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 36 | - | 1.4 mm | 36 | 18 Bit | SRAM | 9 Mbit | - | 9437184 bit | Industrial | PARALLEL | - | CACHE SRAM | - | SRAM | 15 mm | 13 mm | ||
| GS88136CD-200IV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS864032GT-200IVAnlielectronics Тип | GSI Technology |
Cache SRAM, 2MX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TQFP-100 | - | - | - | - | - | SDR | - | - | Parallel | - | - | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | - | 1.7, 2.3 V | - 40 C | - | - | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TQFP | 2.7 V | 1.7 V | - | Synchronous | - | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | - | GS864032GT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 72 Mbit | 4 | - | 250 mA, 330 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 32 | - | - | - | 21 Bit | - | 64 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
| GS864032GT-200IV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS832236AGB-200IVAnlielectronics Тип | GSI Technology |
Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | - | 200 MHz | SDR | - | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-200IV | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | - | 1.7, 2.3 V | - 40 C | - | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | - | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | - | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | - | - | e1 | Yes | 3A991.B.2.B | - | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 235 mA, 270 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | - | 36 Mb | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | - | 22 mm | 14 mm | ||
| GS832236AGB-200IV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662D36BD-350Anlielectronics Тип | GSI Technology |
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662D36BD | - | - | - | SigmaQuad-II | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 885 mA | - | Pipelined | 2 M x 36 | - | - | - | 19 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
| GS8662D36BD-350 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8644Z36E-225VAnlielectronics Тип | GSI Technology |
ZBT SRAM, 2MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | SDR | 15 | - | Parallel | GSI Technology | - | 225 MHz | 153.8@Flow-Through/225@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8644Z36E | - | - | - | NBT | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 4 | - | 270 mA, 370 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | - | - | - | 21 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
| GS8644Z36E-225V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662T37BD-450Anlielectronics Тип | GSI Technology |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 450 MHz | 450 MHz | - | + 70 C | DDR | - | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662T37BD | - | - | - | SigmaDDR-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | 900 mA | - | Pipelined | 2 M x 36 | - | - | - | 20 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
| GS8662T37BD-450 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8321Z18AD-400IAnlielectronics Тип | GSI Technology |
ZBT SRAM, 2MX18, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | BGA-165 | YES | 165 | - | GSI Technology | - | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z18AD-400I | 400 MHz | - | 2.7, 3.6 V | + 100 C | SDR | 2.3, 3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | - | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | - | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8321Z18AD | e0 | No | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | - | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | - | - | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 285 mA, 375 mA | 4 ns | Flow-Through/Pipelined | 2 M x 18 | - | 1.4 mm | 18 | - | SRAM | 36 Mbit | - | 37748736 bit | Industrial | PARALLEL | - | ZBT SRAM | - | SRAM | 15 mm | 13 mm | ||
| GS8321Z18AD-400I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662QT10BD-300MAnlielectronics Тип | GSI Technology |
QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 300 MHz | 300 MHz | 1.9 V | + 125 C | DDR | 1.7 V | - 55 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Military grade | -55 to 125 °C | Tray | GS8662QT10BD | - | - | - | SigmaQuad-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | - | - | Pipelined | 8 M x 9 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Military | - | - | - | - | SRAM | - | - | ||
| GS8662QT10BD-300M | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8322Z36AGB-333IVAnlielectronics Тип | GSI Technology |
ZBT SRAM, 1MX36, 5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 14 | - | Parallel | GSI Technology | - | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AGB | - | - | - | NBT | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 36 Mbit | 4 | - | 290 mA, 375 mA | 5 ns | Flow-Through/Pipelined | 1 M x 36 | - | - | - | 20 Bit | SRAM | 36 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
| GS8322Z36AGB-333IV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS81302T08GE-375IAnlielectronics Тип | GSI Technology |
DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 10 | - | Parallel | GSI Technology | - | 375 MHz | 375 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302T08GE | - | - | - | SigmaDDR-II B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 144 Mbit | 2 | - | 855 mA | - | Pipelined | 16 M x 8 | - | - | - | 23 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
| GS81302T08GE-375I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS81302D18E-250IAnlielectronics Тип | GSI Technology |
DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | GSI Technology | - | QDR | 10 | - | - | GSI Technology | - | - | 250 MHz | 1.9 V | - | - | 1.7 V | - | Yes | - | Surface Mount | - | 18 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | - | - | - | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302D18E | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | - | 2 | - | - | - | Pipelined | - | - | - | - | 21 Bit | SRAM | 144 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
| GS81302D18E-250I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662QT07BD-333Anlielectronics Тип | GSI Technology |
QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | QDR | 15 | - | Parallel | GSI Technology | - | 333 MHz | 333 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662QT07BD | - | - | - | SigmaQuad-II+ B2 | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 920 mA | - | Pipelined | 8 M x 8 | - | - | - | 22 Bit | SRAM | 72 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
| GS8662QT07BD-333 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8320E36AGT-333IAnlielectronics Тип | GSI Technology |
Cache SRAM, 1MX36, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TQFP-100 | - | - | - | GSI Technology | - | SDR | 18 | - | Parallel | GSI Technology | - | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | TQFP | 3.6 V | 2.3 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8320E36AGT | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 100 | - | - | - | - | - | - | 36 Mbit | 4 | - | 280 mA, 365 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 36 | - | - | - | 20 Bit | SRAM | 36 Mb | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
| GS8320E36AGT-333I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662DT38BGD-550Anlielectronics Тип | GSI Technology |
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | - | 15 | - | Parallel | GSI Technology | - | 550 MHz | - | - | + 70 C | DDR | - | 0 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 1.9 V | 1.7 V | - | - | SigmaQuad-II+ | - | - | - | Tray | GS8662DT38BGD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 72 Mbit | - | - | 1.275 A | - | - | 2 M x 36 | - | - | - | - | SRAM | - | - | - | - | - | - | - | - | SRAM | - | - | ||
| GS8662DT38BGD-550 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS816236DGB-333VAnlielectronics Тип | GSI Technology |
Cache SRAM, 512KX36, 5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-119 | - | - | - | GSI Technology | - | SDR | 21 | - | Parallel | GSI Technology | - | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 2.7 V | 1.7 V | - | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS816236DGB | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 119 | - | - | - | - | - | - | 18 Mbit | 4 | - | 240 mA, 310 mA | 5 ns | Flow-Through/Pipelined | 512 k x 36 | - | - | - | 19 Bit | SRAM | 18 Mbit | - | - | Commercial | - | - | - | - | SRAM | - | - | ||
| GS816236DGB-333V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8322Z18AGD-150VAnlielectronics Тип | GSI Technology |
ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGD-150V | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | - | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.13 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z18AGD | - | - | 3A991.B.2.B | NBT | - | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 185 mA, 200 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||
| GS8322Z18AGD-150V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662Q08BD-357IAnlielectronics Тип | GSI Technology |
QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | - | - | QDR | - | - | Parallel | - | - | 357 MHz | 357 MHz | 1.9 V | + 85 C | - | 1.7 V | - 40 C | - | - | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | - | 1.8000 V | Industrial grade | -40 to 100 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 2 | - | 995 mA | - | Pipelined | 8 M x 8 | - | - | - | 22 Bit | - | 72 Mbit | - | - | Industrial | - | - | - | - | - | - | - | ||
| GS8662Q08BD-357I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662T38BGD-350IAnlielectronics Тип | GSI Technology |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | BGA-165 | - | - | - | GSI Technology | - | DDR | 15 | - | Parallel | GSI Technology | - | 350 MHz | 350 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | FBGA | 1.9 V | 1.7 V | - | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662T38BGD | - | - | - | SigmaQuad-II+ | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | 165 | - | - | - | - | - | - | 72 Mbit | 1 | - | 765 mA | - | Pipelined | 2 M x 36 | - | - | - | 20 Bit | SRAM | 72 Mbit | - | - | Industrial | - | - | - | - | SRAM | - | - | ||
| GS8662T38BGD-350I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS816136DGT-375IAnlielectronics Тип | GSI Technology |
Cache SRAM, 512KX36, 4.2ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TQFP-100 | - | - | - | GSI Technology | - | - | 36 | - | Parallel | GSI Technology | - | 375 MHz | - | - | + 85 C | SDR | - | - 40 C | Yes | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | 3.6 V | 2.3 V | - | - | SyncBurst | - | - | - | Tray | GS816136DGT | - | - | - | Pipeline/Flow Through | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 18 Mbit | - | - | 290 mA, 370 mA | 4.2 ns | - | 512 k x 36 | - | - | - | - | SRAM | - | - | 18 | - | - | - | - | - | SRAM | - | - | ||
| GS816136DGT-375I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипGS8662Q09BD-250IAnlielectronics Тип | GSI Technology |
QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q09BD-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | - | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.34 | - | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662Q09BD | e0 | No | 3A991.B.2.B | SigmaQuad-II | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 730 mA | - | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 22 Bit | SRAM | 72 Mbit | - | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||
| GS8662Q09BD-250I |
Индекс :
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