Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page42

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8182T09BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T09BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662R09BGD-350 Anlielectronics Тип	GSI Technology	Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662R09BGD	-	SigmaDDR-II B4	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	590 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662R09BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D06E-500 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	500 MHz	500 MHz	1.9 V	+ 70 C	-	1.7 V	0 C	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS81302D06E	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.26 A	-	Pipelined	16 M x 8	-	-	-	22 Bit	-	144 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS81302D06E-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DD-200M Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	-	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DD-200M	200 MHz	153@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 125 C	SDR	2.3, 3 V	- 55 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	125 °C	-55 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	-	NOT SPECIFIED	5.39	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Military grade	-55 to 125 °C	Tray	GS816218DD	3A991.B.2.B	Pipeline/Flow Through	IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE	-	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2.7 V	-	MILITARY	2.3 V	18 Mbit	2	SYNCHRONOUS	240 mA, 245 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.4 mm	18	20 Bit	SRAM	18 Mbit	-	18874368 bit	Military	PARALLEL	-	CACHE SRAM	-	SRAM	15 mm	13 mm
GS816218DD-200M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z72CGC-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX72, 5.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-209	-	-	-	GSI Technology	-	SDR	21	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	72 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	BGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8162Z72CGC	-	NBT	-	-	Memory & Data Storage	-	-	-	-	-	-	-	209	-	-	-	-	-	-	18 Mbit	8	-	265 mA, 350 mA	5.5 ns	Flow-Through/Pipelined	256 k x 72	-	-	-	18 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8162Z72CGC-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302R08GE-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	DDR	-	-	-	-	-	-	250 MHz	1.9 V	-	-	1.7 V	-	-	Surface Mount	-	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	-	-	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	2	-	-	-	Pipelined	-	-	-	-	22 Bit	-	144 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS81302R08GE-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT06BGD-400 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662TT06BGD	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	625 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662TT06BGD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88136CGT-333I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, CMOS, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	-	GSI Technology	-	-	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88136CGT-333I	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	SMD/SMT	36 Bit	262144 words	256000	85 °C	-40 °C	UNSPECIFIED	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	3.6 V	2.3 V	3.3 V	Synchronous	SyncBurst	2.5, 3.3 V	-	-40 to 85 °C	Tray	GS88136CGT	3A991.B.2.B	Pipeline/Flow Through	ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-XQFP-G100	Not Qualified	3.6 V	-	INDUSTRIAL	3 V	9 Mbit	-	SYNCHRONOUS	200 mA, 260 mA	4.5@Flow-Through/2.5	-	256 k x 36	-	1.6 mm	36	-	SRAM	-	-	9	-	SERIAL	-	CACHE SRAM	-	SRAM	20 mm	14 mm
GS88136CGT-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302DT20E-450I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	10	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	QDR-II	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302DT20E	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.27 A	-	Pipelined	8 M x 18	-	-	-	21 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302DT20E-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q08BD-300I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662Q08BD	-	SigmaQuad-II	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	860 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662Q08BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z18DD-375I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	-	2.3, 3 V	- 40 C	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	-	2.5, 3.3 V	Industrial grade	-40 to 100 °C	-	GS8162Z18DD	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	2	-	270 mA, 340 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	-	18 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS8162Z18DD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816236DGB-333V Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	21	-	Parallel	GSI Technology	-	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DGB	-	Pipeline/Flow Through	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	18 Mbit	4	-	240 mA, 310 mA	5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS816236DGB-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z18AGD-150V Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AGD-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AGD	3A991.B.2.B	NBT	ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	185 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	1.7 V	SRAM	15 mm	13 mm
GS8322Z18AGD-150V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q08BD-357I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	357 MHz	357 MHz	1.9 V	+ 85 C	-	1.7 V	- 40 C	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 100 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	995 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	-	72 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS8662Q08BD-357I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT11BD-450 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662DT11BD	-	SigmaQuad-II+	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	820 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662DT11BD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z18CGD-333 Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	-	2.3, 3 V	0 C	-	Surface Mount	SMD/SMT	18 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 70 °C	-	GS881Z18CGD	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	9 Mbit	1	-	165 mA, 220 mA	4.5 ns	Flow-Through/Pipelined	512 k x 18	-	-	-	18 Bit	-	9 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS881Z18CGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88136CD-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	-	1.7, 2.3 V	0 C	-	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 70 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	9 Mbit	1	-	140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36	-	-	-	18 Bit	-	9 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS88136CD-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS882Z36CB-333 Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 4.5ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	42	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS882Z36CB	-	NBT Pipeline/Flow Through	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	9 Mbit	4	-	180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 36	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS882Z36CB-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z32CGT-150V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	66	-	Parallel	GSI Technology	-	150 MHz	-	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	32 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CGT	-	NBT	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	9 Mbit	1	-	110 mA, 125 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	-	-	-	18 Bit	SRAM	8 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS881Z32CGT-150V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT07BD-400I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662TT07BD	-	SigmaDDR-II+ B2	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	635 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662TT07BD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8182T09BD-300I,GS8662R09BGD-350,GS81302D06E-500,GS816218DD-200M,GS8162Z72CGC-250V.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)