Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page43

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr. Тип GS8662TT37BGD-350I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	350 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662TT37BGD-350I	350 MHz	350 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.22	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662TT37BGD	e1	Yes	3A991.B.2.B	SigmaDDR-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	-	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	72 Mbit	1	SYNCHRONOUS	765 mA	-	Pipelined	2 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	72 Mbit	0.25 A	75497472 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	SRAM	15 mm	13 mm	-
GS8662TT37BGD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662R36BGD-350 Anlielectronics Тип	GSI Technology	Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662R36BGD	-	-	-	SigmaDDR-II B4	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	72 Mbit	1	-	755 mA	-	Pipelined	2 M x 36	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS8662R36BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGD-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 4.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS816118DGD	-	-	-	Pipeline/Flow Through	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	18 Mbit	2	-	240 mA, 285 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS816118DGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T06BD-500I Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX8, 0.45ns, CMOS, PBGA165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	500 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342T06BD-500I	500 MHz	500 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	-	BGA165,11X15,40	RECTANGULAR	GRID ARRAY	Active	-	-	5.88	-	No	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 85 °C	Tray	GS8342T06BD	-	-	-	SigmaQuad-II+	-	-	-	-	-	Memory & Data Storage	CMOS	BOTTOM	BALL	-	-	1 mm	compliant	165	R-PBGA-B165	Not Qualified	-	-	1.5/1.8,1.8 V	INDUSTRIAL	-	36 Mbit	1	SYNCHRONOUS	740 mA	-	Pipelined	4 M x 8	3-STATE	-	8	21 Bit	SRAM	36 Mbit	0.25 A	33554432 bit	Industrial	PARALLEL	COMMON	STANDARD SRAM	1.7 V	SRAM	-	-	-
GS8342T06BD-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662Q07BD-200I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	200 MHz	200 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662Q07BD	-	-	-	SigmaQuad-II+ B2	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	2	-	610 mA	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8662Q07BD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88237CGB-333I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	42	-	Parallel	GSI Technology	-	333 MHz	333 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88237CGB	-	-	-	SCD/DCD Pipeline	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	-	9 Mbit	2	-	260 mA	-	Pipelined	256 k x 36	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS88237CGB-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q10BGD-333I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q10BGD	-	-	-	SigmaQuad-II+ B2	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	36 Mbit	2	-	895 mA	-	Pipelined	4 M x 9	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8342Q10BGD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D06BD-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662D06BD-500I	500 MHz	500 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.23	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662D06BD	-	-	3A991.B.2.B	SigmaQuad-II+	-	-	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	-	1.9 V	-	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	900 mA	-	Pipelined	8 M x 8	-	1.4 mm	8	21 Bit	SRAM	72 Mbit	-	67108864 bit	Industrial	PARALLEL	-	QDR SRAM	-	SRAM	15 mm	13 mm	-
GS8662D06BD-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T19BGD-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T19BGD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D18BGD-333 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	333 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662D18BGD-333	333 MHz	333 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.29	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662D18BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	-	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	630 mA	-	Pipelined	4 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	72 Mbit	-	75497472 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm	-
GS8662D18BGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D07BD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	333 MHz	333 MHz	-	+ 70 C	-	-	0 C	-	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS8662D07BD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	2	-	630 mA	-	-	8 M x 8	-	-	-	-	-	72 Mbit	-	-	Commercial	-	-	-	-	-	-	-	-
GS8662D07BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8644Z36GE-166I Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX36, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	15	-	Parallel	GSI Technology	-	166 MHz	142.8@Flow-Through/166@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS8644Z36GE	-	-	-	NBT	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	72 Mbit	4	-	285 mA, 345 mA	8 ns	Flow-Through/Pipelined	2 M x 36	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8644Z36GE-166I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321E36AD-400 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 4ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	4 ns	-	400 MHz	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E36AD-400	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	-	2.3, 3 V	0 C	-	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.3	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 85 °C	-	-	e0	No	3A991.B.2.B	-	TIN LEAD	-	-	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	-	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	285 mA, 395 mA	4 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	-	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	-	15 mm	13 mm	-
GS8321E36AD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z18DB-200M Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	SDR	-	-	Parallel	-	-	200 MHz	153@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 125 C	-	2.3, 3 V	- 55 C	-	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	3.6 V	2.3 V	-	Synchronous	-	2.5, 3.3 V	Military grade	-55 to 125 °C	-	GS8162Z18DB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	119	-	-	-	-	-	-	-	18 Mbit	2	-	240 mA, 245 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	-	-	-	20 Bit	-	18 Mbit	-	-	Military	-	-	-	-	-	-	-	-
GS8162Z18DB-200M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT07GE-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 70 C	DDR-II	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS81302TT07GE	-	-	-	SigmaDDR-II+ B2	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	144 Mbit	1	-	755 mA	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-	-
GS81302TT07GE-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D19BGD-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662D19BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	72 Mbit	2	-	830 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-	-
GS8662D19BGD-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E36CGT-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-200V	200 MHz	-	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	-	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	-	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	3-STATE	1.6 mm	36	-	SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm	-
GS880E36CGT-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S36BD-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	-	-40 to 85 °C	Tray	GS8182S36BD	-	-	-	SigmaSIO DDR-II	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	18 Mbit	-	-	905 mA	0.45	-	512 k x 36	-	-	-	-	SRAM	-	-	18	-	-	-	-	-	SRAM	-	-	-
GS8182S36BD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342T07BD-450I Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 4M x 8 36M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	DDR	15	-	Parallel	-	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Compliant	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342T07BD	-	-	-	SigmaDDR-II+ B2	-	100 °C	-40 °C	-	-	-	-	-	-	-	-	-	-	165	-	-	1.8 V	-	-	-	-	36 Mbit	1	-	680 mA	-	Pipelined	4 M x 8	-	-	-	21 Bit	-	36 Mbit	-	-	Industrial	-	-	-	-	-	-	-	No
GS8342T07BD-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82582QT38GE-500I Anlielectronics Тип	GSI Technology	SRAM 1.5/1.8V 8M x 36 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	10	-	Parallel	-	-	500 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS82582QT38GE	-	-	-	SigmaQuad-II+ B2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	1.63 A	-	-	8 M x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82582QT38GE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8662TT37BGD-350I,GS8662R36BGD-350,GS816118DGD-333,GS8342T06BD-500I,GS8662Q07BD-200I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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