Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page45

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8640E32GT-200I Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	32 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E32GT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	72 Mbit	4	-	250 mA, 330 mA	7.5 ns	Flow-Through/Pipelined	2 M x 32	-	-	-	21 Bit	SRAM	64 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8640E32GT-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D11BD-450 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662D11BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	820 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662D11BD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T19BD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T19BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832136AGD-375 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 4.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	4.5 ns	GSI Technology	375 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832136AGD-375	375 MHz	-	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832136AGD	-	-	3A991.B.2.B	Pipeline/Flow Through	-	PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	270 mA, 380 mA	4.2 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	-	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
GS832136AGD-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D07BGD-350I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342D07BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	675 mA	-	Pipelined	4 M x 8	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342D07BGD-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832118AGD-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 5.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	SDR	-	-	Parallel	-	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	-	1.7, 2.3 V	0 C	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	2.7 V	1.7 V	-	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 85 °C	-	GS832118AGD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	225 mA, 265 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	21 Bit	-	36 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS832118AGD-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8320E32AGT-250IV Anlielectronics Тип	GSI Technology	SRAM, Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	-	-	-	GSI Technology	-	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8320E32AGT-250IV	250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	32 Bit	1 MWords	-	-	-	-	-	,	-	-	-	Active	-	-	5.8	Details	Yes	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8320E32AGT	-	-	-	DCD Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	compliant	100	-	-	-	-	-	-	36 Mbit	4	-	260 mA, 315 mA	5.5 ns	Flow-Through/Pipelined	1 M x 32	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8320E32AGT-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662T10BD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662T10BD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	535 mA	-	Pipelined	8 M x 9	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662T10BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z36DGT-400 Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 4ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	4 ns	GSI Technology	-	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z36DGT-400	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.26	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161Z36DGT	-	-	3A991.B.2.B	NBT	-	ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	-	2.7 V	-	COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36	-	1.6 mm	36	19 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	20 mm	14 mm
GS8161Z36DGT-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D09BGD-350 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	-	+ 70 C	DDR	-	0 C	Yes	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662D09BGD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	695 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662D09BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T36BD-200I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	DDR	-	-	-	-	-	-	200 MHz	-	-	-	-	-	-	Surface Mount	-	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	-	-	-	Synchronous	-	1.8000 V	Industrial grade	-40 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	1	-	-	-	Pipelined	-	-	-	-	-	-	18 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS8182T36BD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E36CGT-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 4.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E36CGT	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	9 Mbit	4	-	180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 36	-	-	-	18 Bit	SRAM	9 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS881E36CGT-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662T19BD-300 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662T19BD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	495 mA	-	Pipelined	4 M x 18	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662T19BD-300 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT19BGD-333I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662DT19BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	640 mA	-	Pipelined	4 M x 18	-	-	-	-	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662DT19BGD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302T08E-250I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	250 MHz	250 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302T08E	-	-	-	SigmaDDR-II B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	605 mA	-	Pipelined	16 M x 8	-	-	-	23 Bit	SRAM	144 Mb	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302T08E-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302R08E-333I Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	10	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302R08E	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	765 mA	-	Pipelined	16 M x 8	-	-	-	22 Bit	SRAM	144 Mb	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302R08E-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D19BGD-450 Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	450 MHz	450 MHz	1.9 V	+ 70 C	-	1.7 V	0 C	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	820 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	-	72 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8662D19BGD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881E36CD-200IV Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15	-	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	-	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	-	1.4 mm	36	18 Bit	SRAM	9 Mbit	-	9437184 bit	Industrial	PARALLEL	-	CACHE SRAM	-	SRAM	15 mm	13 mm
GS881E36CD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S08BGD-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	18	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	SMD/SMT	8 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	Industrial grade	-40 to 85 °C	Tray	GS8182S08BGD	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	-	-	690 mA	0.45	-	2 M x 8	-	-	-	-	SRAM	-	-	18	Industrial	-	-	-	-	SRAM	-	-
GS8182S08BGD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8644Z18GE-150V Anlielectronics Тип	GSI Technology	ZBT SRAM, 4MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	15	-	Parallel	GSI Technology	-	150 MHz	-	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8644Z18GE	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	225 mA, 275 mA	8.5 ns	Flow-Through/Pipelined	4 M x 18	-	-	-	-	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8644Z18GE-150V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8640E32GT-200I,GS8662D11BD-450,GS8182T19BD-333,GS832136AGD-375,GS8342D07BGD-350I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)