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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Package / Case Surface Mount Number of Terminals Access Time-Max Brand Clock Frequency-Max (fCLK) Data Rate Architecture Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Interface Type Manufacturer Manufacturer Part Number Maximum Clock Frequency Maximum Clock Rate Maximum Operating Supply Voltage Maximum Operating Temperature Memory Types Minimum Operating Supply Voltage Minimum Operating Temperature Moisture Sensitive Moisture Sensitivity Levels Mounting Mounting Styles Number of I/O Lines Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Supplier Package Supply Voltage-Max Supply Voltage-Min Supply Voltage-Nom (Vsup) Timing Type Tradename Typical Operating Supply Voltage Usage Level Operating Temperature Packaging Series JESD-609 Code Pbfree Code ECCN Code Type Terminal Finish Additional Feature HTS Code Subcategory Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Power Supplies Temperature Grade Supply Voltage-Min (Vsup) Memory Size Number of Ports Operating Mode Supply Current-Max Access Time Architecture Organization Output Characteristics Seated Height-Max Memory Width Address Bus Width Product Type Density Memory Density Screening Level Parallel/Serial I/O Type Memory IC Type Standby Voltage-Min Product Category Length Width
GSI Technology GS8662DT37BD-350I
Mfr. Тип
GS8662DT37BD-350I
Anlielectronics Тип

GSI Technology
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - BGA-165 - - - - - QDR - - Parallel - - 350 MHz 350 MHz 1.9 V + 85 C - 1.7 V - 40 C - - Surface Mount SMD/SMT 36 Bit 2 MWords - - - - - - - - - - - - - - - FBGA 1.9 V 1.7 V - Synchronous - 1.8000 V Industrial grade -40 to 100 °C - GS8662DT37BD - - - - - - - - - - - - - - - 165 - - - - - - 72 Mbit 2 - 895 mA - Pipelined 2 M x 36 - - - 19 Bit - 72 Mbit - Industrial - - - - - - -
    GS8662DT37BD-350I
    GS8662DT37BD-350I

    GSI Technology
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    GSI Technology GS864418E-200IV
    Mfr. Тип
    GS864418E-200IV
    Anlielectronics Тип

    		GSI Technology
    Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - BGA-165 - - - GSI Technology - SDR 15 - Parallel GSI Technology - 200 MHz 153.8@Flow-Through/200@Pipelined MHz 2, 2.7 V + 85 C SDR 1.7, 2.3 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 4 MWords - - - - - - - - - - - - - - - FBGA 2.7 V 1.7 V - Synchronous SyncBurst 1.8, 2.5 V Industrial grade -40 to 85 °C Tray GS864418E - - - Synchronous Burst - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit 2 - 275 mA, 350 mA 6.5 ns Flow-Through/Pipelined 4 M x 18 - - - 22 Bit SRAM 72 Mbit - Industrial - - - - SRAM - -
      GS864418E-200IV
      GS864418E-200IV

      GSI Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      GSI Technology GS8662R08BGD-350
      Mfr. Тип
      GS8662R08BGD-350
      Anlielectronics Тип

      		GSI Technology
      Standard SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - BGA-165 - - - GSI Technology - DDR 15 - Parallel GSI Technology - 350 MHz 350 MHz - + 70 C DDR - 0 C Yes - Surface Mount SMD/SMT 8 Bit 8 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaCIO DDR-II 1.8000 V Commercial grade 0 to 85 °C Tray GS8662R08BGD - - - SigmaDDR-II B4 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit 1 - 590 mA - Pipelined 8 M x 8 - - - 21 Bit SRAM 72 Mbit - Commercial - - - - SRAM - -
        GS8662R08BGD-350
        GS8662R08BGD-350

        GSI Technology
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        GSI Technology GS8320Z18AGT-400
        Mfr. Тип
        GS8320Z18AGT-400
        Anlielectronics Тип

        		GSI Technology
        ZBT SRAM, 2MX18, 4ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - TQFP-100 - - - GSI Technology - SDR 18 - Parallel GSI Technology - 400 MHz 250@Flow-Through/400@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 2 MWords - - - - - - - - - - - - - Details - TQFP 3.6 V 2.3 V - Synchronous NBT SRAM 2.5, 3.3 V Commercial grade 0 to 85 °C Tray GS8320Z18AGT - - - NBT Pipeline/Flow Through - - - Memory & Data Storage - - - - - - - 100 - - - - - - 36 Mbit 2 - 265 mA, 355 mA 4 ns Flow-Through/Pipelined 2 M x 18 - - - 21 Bit SRAM 36 Mbit - Commercial - - - - SRAM - -
          GS8320Z18AGT-400
          GS8320Z18AGT-400

          GSI Technology
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          GSI Technology GS864236GB-200
          Mfr. Тип
          GS864236GB-200
          Anlielectronics Тип

          		GSI Technology
          Cache SRAM, 2MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 8 Weeks BGA-119 YES 119 7.5 ns GSI Technology - SDR 14 GSI TECHNOLOGY Parallel GSI Technology GS864236GB-200 200 MHz - 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes 3 Surface Mount SMD/SMT 36 Bit 2 MWords 2000000 70 °C - PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.18 Details Yes FBGA 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V Commercial grade 0 to 70 °C Tray GS864236GB e1 Yes 3A991.B.2.B SCD/DCD Pipeline/Flow Through Tin/Silver/Copper (Sn/Ag/Cu) FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL 260 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified 2.7 V - COMMERCIAL 2.3 V 72 Mbit 4 SYNCHRONOUS 230 mA, 310 mA 7.5 ns Flow-Through/Pipelined 2 M x 36 - 1.99 mm 36 - SRAM 72 Mbit 75497472 bit Commercial PARALLEL - CACHE SRAM - SRAM 22 mm 14 mm
            GS864236GB-200
            GS864236GB-200

            GSI Technology
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            GSI Technology GS8342DT20BD-550
            Mfr. Тип
            GS8342DT20BD-550
            Anlielectronics Тип

            		GSI Technology
            QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 10 Weeks BGA-165 YES 165 0.45 ns GSI Technology 550 MHz QDR 15 GSI TECHNOLOGY Parallel GSI Technology GS8342DT20BD-550 550 MHz 550 MHz 1.9 V + 70 C DDR 1.7 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 2 MWords 2000000 85 °C - PLASTIC/EPOXY LBGA LBGA, BGA165,11X15,40 BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.36 N No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaQuad-II+ 1.8000 V Commercial grade 0 to 85 °C Tray GS8342DT20BD e0 No 3A991.B.2.B SigmaQuad-II+ Tin/Lead (Sn/Pb) - - Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified 1.9 V 1.5/1.8,1.8 V OTHER 1.7 V 36 Mbit 2 SYNCHRONOUS 940 mA - Pipelined 2 M x 18 3-STATE 1.4 mm 18 19 Bit SRAM 36 Mbit 37748736 bit Commercial PARALLEL SEPARATE QDR SRAM 1.7 V SRAM 15 mm 13 mm
              GS8342DT20BD-550
              GS8342DT20BD-550

              GSI Technology
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              GSI Technology GS81284Z18B-167
              Mfr. Тип
              GS81284Z18B-167
              Anlielectronics Тип

              		GSI Technology
              ZBT SRAM, 8MX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks BGA-119 YES 119 8 ns - - SDR - GSI TECHNOLOGY Parallel GSI Technology GS81284Z18B-167 167 MHz 125@Flow-Through/167@Pipelined MHz 2.7, 3.6 V + 70 C - 2.3, 3 V 0 C - - Surface Mount SMD/SMT 18 Bit 8 MWords 8000000 70 °C - PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.21 - No FBGA 3.6 V 2.3 V 2.5 V Synchronous - 2.5, 3.3 V Commercial grade 0 to 70 °C - GS81284Z18B e0 No 3A991.B.2.B - Tin/Lead (Sn/Pb) FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V 8542.32.00.41 - CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified 2.7 V - COMMERCIAL 2.3 V 144 Mbit 2 SYNCHRONOUS 315 mA, 365 mA 8 ns Flow-Through/Pipelined 8 M x 18 - 1.99 mm 18 23 Bit - 144 Mbit 150994944 bit Commercial PARALLEL - ZBT SRAM - - 22 mm 14 mm
                GS81284Z18B-167
                GS81284Z18B-167

                GSI Technology
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                GSI Technology GS8182T18BD-333
                Mfr. Тип
                GS8182T18BD-333
                Anlielectronics Тип

                		GSI Technology
                DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  GS8182T18BD-333
                  GS8182T18BD-333

                  GSI Technology
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  GSI Technology GS8662QT10BGD-200
                  Mfr. Тип
                  GS8662QT10BGD-200
                  Anlielectronics Тип

                  		GSI Technology
                  QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - BGA-165 - - - GSI Technology - QDR 15 - Parallel GSI Technology - 200 MHz 200 MHz 1.9 V + 70 C DDR 1.7 V 0 C Yes - Surface Mount SMD/SMT 9 Bit 8 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II+ 1.8000 V Commercial grade 0 to 85 °C Tray GS8662QT10BGD - - - SigmaQuad-II+ B2 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit 2 - 600 mA - Pipelined 8 M x 9 - - - 22 Bit SRAM 72 Mbit - Commercial - - - - SRAM - -
                    GS8662QT10BGD-200
                    GS8662QT10BGD-200

                    GSI Technology
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    GSI Technology GS8662TT37BGD-333I
                    Mfr. Тип
                    GS8662TT37BGD-333I
                    Anlielectronics Тип

                    		GSI Technology
                    DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - BGA-165 - - - GSI Technology - DDR 15 - Parallel GSI Technology - 333 MHz 333 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 36 Bit 2 MWords - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - Synchronous SigmaDDR-II+ 1.8000 V Industrial grade -40 to 100 °C Tray GS8662TT37BGD - - - SigmaDDR-II+ B2 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit 1 - 695 mA - Pipelined 2 M x 36 - - - 20 Bit SRAM 72 Mbit - Industrial - - - - SRAM - -
                      GS8662TT37BGD-333I
                      GS8662TT37BGD-333I

                      GSI Technology
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      GSI Technology GS832118AGD-150V
                      Mfr. Тип
                      GS832118AGD-150V
                      Anlielectronics Тип

                      		GSI Technology
                      Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - BGA-165 - - - GSI Technology - SDR 18 - Parallel GSI Technology - 150 MHz 133@Flow-Through/150@Pipelined MHz 2, 2.7 V + 70 C SDR 1.7, 2.3 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 2 MWords - - - - - - - - - - - - - Details - FBGA 2.7 V 1.7 V - Synchronous SyncBurst 1.8, 2.5 V Commercial grade 0 to 85 °C Tray GS832118AGD - - - Synchronous Burst - - - Memory & Data Storage - - - - - - - 165 - - - - - - 36 Mbit 2 - 185 mA, 200 mA 7.5 ns Flow-Through/Pipelined 2 M x 18 - - - 21 Bit SRAM 36 Mbit - Commercial - - - - SRAM - -
                        GS832118AGD-150V
                        GS832118AGD-150V

                        GSI Technology
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        GSI Technology GS88032CGT-250IV
                        Mfr. Тип
                        GS88032CGT-250IV
                        Anlielectronics Тип

                        		GSI Technology
                        Cache SRAM, 256KX32, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - TQFP-100 - - - - - SDR - - Parallel - - 250 MHz 250 MHz 2, 2.7 V + 85 C - 1.7, 2.3 V - 40 C - - Surface Mount SMD/SMT 32 Bit 256 kWords - - - - - - - - - - - - - - - TQFP 2.7 V 1.7 V - Synchronous - 1.8, 2.5 V Industrial grade -40 to 85 °C - GS88032CGT - - - - - - - - - - - - - - - 100 - - - - - - 9 Mbit 4 - 160 mA, 200 mA 5.5 ns Flow-Through/Pipelined 256 k x 32 - - - 18 Bit - 9 Mbit - Industrial - - - - - - -
                          GS88032CGT-250IV
                          GS88032CGT-250IV

                          GSI Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          GSI Technology GS8182D09BD-375M
                          Mfr. Тип
                          GS8182D09BD-375M
                          Anlielectronics Тип

                          		GSI Technology
                          QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks BGA-165 YES 165 0.45 ns GSI Technology - QDR 18 GSI TECHNOLOGY Parallel GSI Technology GS8182D09BD-375M 375 MHz 375 MHz - + 125 C DDR - - 55 C Yes - Surface Mount SMD/SMT 9 Bit 2 MWords 2000000 125 °C -55 °C PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.75 - No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaQuad-II 1.8000 V Military grade -55 to 125 °C Tray GS8182D09BD - - 3A991.B.2.B SigmaQuad-II - PIPELINED ARCHITECTURE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified 1.9 V - MILITARY 1.7 V 18 Mbit 2 SYNCHRONOUS 730 mA - Pipelined 2 M x 9 - 1.4 mm 9 19 Bit SRAM 18 Mbit 18874368 bit Military PARALLEL - QDR SRAM - SRAM 15 mm 13 mm
                            GS8182D09BD-375M
                            GS8182D09BD-375M

                            GSI Technology
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            GSI Technology GS816236DD-375
                            Mfr. Тип
                            GS816236DD-375
                            Anlielectronics Тип

                            		GSI Technology
                            Cache SRAM, 512KX36, 4.2ns, CMOS, PBGA165, FPBGA-165
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - BGA-165 - - - GSI Technology - - 36 - Parallel GSI Technology - 375 MHz 238@Flow-Through/375@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes - - SMD/SMT 36 Bit - - - - - - - - - - - - - - N - FBGA 3.6 V 2.3 V - - SyncBurst 2.5, 3.3 V - 0 to 85 °C Tray GS816236DD - - - Pipeline/Flow Through - - - Memory & Data Storage - - - - - - - 165 - - - - - - 18 Mbit - - 270 mA, 350 mA 4.2@Flow-Through/2.5 - 512 k x 36 - - - 19 Bit SRAM - 18 - - - - - SRAM - -
                              GS816236DD-375
                              GS816236DD-375

                              GSI Technology
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              GSI Technology GS816018DGT-400
                              Mfr. Тип
                              GS816018DGT-400
                              Anlielectronics Тип

                              		GSI Technology
                              Cache SRAM, 1MX8, 4ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 10 Weeks TQFP-100 YES 100 4 ns GSI Technology - SDR 36 GSI TECHNOLOGY Parallel GSI Technology GS816018DGT-400 400 MHz 250@Flow-Through/400@Pipelined MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 1 MWords 1000000 70 °C - PLASTIC/EPOXY LQFP LQFP, - RECTANGULAR FLATPACK, LOW PROFILE Active QFP NOT SPECIFIED 5.32 Details Yes TQFP 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V Commercial grade 0 to 85 °C Tray GS816018DGT - - 3A991.B.2.B Pipeline/Flow Through - FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V 8542.32.00.41 Memory & Data Storage CMOS QUAD GULL WING NOT SPECIFIED 1 0.65 mm compliant 100 R-PQFP-G100 - 2.7 V - COMMERCIAL 2.3 V 18 Mbit 2 SYNCHRONOUS 255 mA, 335 mA 4 ns Flow-Through/Pipelined 1 M x 18 - 1.6 mm 8 21 Bit SRAM 18 Mbit 8388608 bit Commercial PARALLEL - CACHE SRAM - SRAM 20 mm 14 mm
                                GS816018DGT-400
                                GS816018DGT-400

                                GSI Technology
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                GSI Technology GS8662T36BGD-400
                                Mfr. Тип
                                GS8662T36BGD-400
                                Anlielectronics Тип

                                		GSI Technology
                                DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - BGA-165 - - - GSI Technology - - 15 - Parallel GSI Technology - 400 MHz 400 MHz 1.9 V + 70 C DDR 1.7 V 0 C Yes - - SMD/SMT 36 Bit - - - - - - - - - - - - - - Details - FBGA 1.9 V 1.7 V - - SigmaDDR-II 1.8000 V Commercial grade 0 to 85 °C Tray GS8662T36BGD - - - SigmaDDR-II B2 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit - - 800 mA 0.45 - 2 M x 36 - - - - SRAM - 72 Commercial - - - - SRAM - -
                                  GS8662T36BGD-400
                                  GS8662T36BGD-400

                                  GSI Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  GSI Technology GS816273CGC-300I
                                  Mfr. Тип
                                  GS816273CGC-300I
                                  Anlielectronics Тип

                                  		GSI Technology
                                  Cache SRAM, 256KX72, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - BGA-209 - - - GSI Technology - SDR 21 - Parallel GSI Technology - 300 MHz 300 MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V - 40 C Yes - Surface Mount SMD/SMT 72 Bit 256 kWords - - - - - - - - - - - - - Details - BGA 3.6 V 2.3 V - Synchronous SyncBurst 2.5, 3.3 V Industrial grade -40 to 85 °C Tray GS816273CGC - - - Pipeline - - - Memory & Data Storage - - - - - - - 209 - - - - - - 18 Mbit 8 - 425 mA - Pipelined 256 k x 72 - - - 18 Bit SRAM 18 Mbit - Industrial - - - - SRAM - -
                                    GS816273CGC-300I
                                    GS816273CGC-300I

                                    GSI Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    GSI Technology GS8662D10BD-450I
                                    Mfr. Тип
                                    GS8662D10BD-450I
                                    Anlielectronics Тип

                                    		GSI Technology
                                    DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - BGA-165 - - - GSI Technology - QDR 15 - Parallel GSI Technology - 450 MHz 450 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 9 Bit 8 MWords - - - - - - - - - - - - - - - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II+ 1.8000 V Industrial grade -40 to 100 °C Tray GS8662D10BD - - - SigmaQuad-II+ B4 - - - Memory & Data Storage - - - - - - - 165 - - - - - - 72 Mbit 2 - 830 mA - Pipelined 8 M x 9 - - - 21 Bit SRAM 72 Mbit - Industrial - - - - SRAM - -
                                      GS8662D10BD-450I
                                      GS8662D10BD-450I

                                      GSI Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      GSI Technology GS88032CGT-250V
                                      Mfr. Тип
                                      GS88032CGT-250V
                                      Anlielectronics Тип

                                      		GSI Technology
                                      Cache SRAM, 256KX32, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - TQFP-100 - - - GSI Technology - SDR 66 - Parallel GSI Technology - 250 MHz 250 MHz 2, 2.7 V + 70 C SDR 1.7, 2.3 V 0 C Yes - Surface Mount SMD/SMT 32 Bit 256 kWords - - - - - - - - - - - - - Details - TQFP 2.7 V 1.7 V - Synchronous SyncBurst 1.8, 2.5 V Commercial grade 0 to 70 °C Tray GS88032CGT - - - Synchronous Burst - - - Memory & Data Storage - - - - - - - 100 - - - - - - 9 Mbit 4 - 140 mA, 180 mA 5.5 ns Flow-Through/Pipelined 256 k x 32 - - - 18 Bit SRAM 9 Mbit - Commercial - - - - SRAM - -
                                        GS88032CGT-250V
                                        GS88032CGT-250V

                                        GSI Technology
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        GSI Technology GS8128418B-167
                                        Mfr. Тип
                                        GS8128418B-167
                                        Anlielectronics Тип

                                        		GSI Technology
                                        Cache SRAM, 8MX18, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 10 Weeks BGA-119 YES 119 8 ns GSI Technology - SDR 10 GSI TECHNOLOGY Parallel GSI Technology GS8128418B-167 167 MHz 125@Flow-Through/167@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes - Surface Mount SMD/SMT 18 Bit 8 MWords 8000000 70 °C - PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.22 N No FBGA 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V Commercial grade 0 to 70 °C Tray GS8128418B e0 No 3A991.B.2.B NBT Pipeline/Flow Through Tin/Lead (Sn/Pb) PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified 2.7 V - COMMERCIAL 2.3 V 144 Mbit 2 SYNCHRONOUS 315 mA, 365 mA 8 ns Flow-Through/Pipelined 8 M x 18 - 1.99 mm 18 23 Bit SRAM 144 Mbit 150994944 bit Commercial PARALLEL - CACHE SRAM - SRAM 22 mm 14 mm
                                          GS8128418B-167
                                          GS8128418B-167

                                          GSI Technology
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8662DT37BD-350I,GS864418E-200IV,GS8662R08BGD-350,GS8320Z18AGT-400,GS864236GB-200.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.