Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page49

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS88132CGD-200 Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX32, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	72	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS88132CGD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	140 mA, 170 mA	6.5 ns	-	256 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS88132CGD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302S18GE-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	DDR	10	-	Parallel	GSI Technology	-	300 MHz	300 MHz	-	+ 85 C	DDR-II	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302S18GE	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	825 mA	-	Pipelined	8 M x 18	-	-	-	22 Bit	SRAM	144 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS81302S18GE-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT06BGD-450I Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662DT06BGD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	830 mA	-	Pipelined	8 M x 8	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662DT06BGD-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8640E36GT-250IV Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	18	-	Parallel	GSI Technology	-	250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E36GT	-	-	-	DCD	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	72 Mbit	-	-	275 mA, 380 mA	6.5@Flow-Through/3@P	-	2 M x 36	-	-	-	-	SRAM	-	-	72	Industrial	-	-	-	-	SRAM	-	-
GS8640E36GT-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D18BGD-300I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	QDR	15	-	Parallel	GSI Technology	-	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662D18BGD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	590 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662D18BGD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302S18E-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	YES	165	0.45 ns	GSI Technology	DDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302S18E-300I	300 MHz	300 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	5.06	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO DDR-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302S18E	-	No	3A991.B.2.B	SigmaSIO DDR-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	825 mA	-	Pipelined	8 M x 18	-	1.5 mm	18	22 Bit	SRAM	144 Mbit	-	150994944 bit	Industrial	PARALLEL	-	DDR SRAM	-	SRAM	17 mm	15 mm
GS81302S18E-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z36AGB-333V Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, 5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	SDR	-	-	-	-	-	-	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	-	-	1.7, 2.3 V	-	-	-	Surface Mount	-	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	-	-	-	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	119	-	-	-	-	-	-	-	4	-	-	-	Flow-Through/Pipelined	-	-	-	-	20 Bit	-	36 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8322Z36AGB-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662QT19BD-357 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	QDR	-	-	-	-	-	-	357 MHz	1.9 V	-	-	1.7 V	-	-	-	Surface Mount	-	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	-	-	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	-	2	-	-	-	Pipelined	-	-	-	-	21 Bit	-	72 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8662QT19BD-357 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D19BGD-450I Anlielectronics Тип	GSI Technology	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662D19BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	830 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662D19BGD-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS880E36CGT-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-200V	200 MHz	-	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	3-STATE	1.6 mm	36	-	SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
GS880E36CGT-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182T09BD-300I Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8182T09BD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662R09BGD-350 Anlielectronics Тип	GSI Technology	Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662R09BGD	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	590 mA	-	Pipelined	8 M x 9	-	-	-	21 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662R09BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302D06E-500 Anlielectronics Тип	GSI Technology	DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	QDR	-	-	Parallel	-	-	500 MHz	500 MHz	1.9 V	+ 70 C	-	1.7 V	0 C	-	-	Surface Mount	SMD/SMT	8 Bit	16 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	GS81302D06E	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	2	-	1.26 A	-	Pipelined	16 M x 8	-	-	-	22 Bit	-	144 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS81302D06E-500 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DD-200M Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816218DD-200M	200 MHz	153@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 125 C	SDR	2.3, 3 V	- 55 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	125 °C	-55 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	-	NOT SPECIFIED	5.39	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Military grade	-55 to 125 °C	Tray	GS816218DD	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE	-	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2.7 V	-	MILITARY	2.3 V	18 Mbit	2	SYNCHRONOUS	240 mA, 245 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.4 mm	18	20 Bit	SRAM	18 Mbit	-	18874368 bit	Military	PARALLEL	-	CACHE SRAM	-	SRAM	15 mm	13 mm
GS816218DD-200M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z72CGC-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX72, 5.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-209 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-209	-	-	-	GSI Technology	SDR	21	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	72 Bit	256 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	BGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8162Z72CGC	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	209	-	-	-	-	-	-	18 Mbit	8	-	265 mA, 350 mA	5.5 ns	Flow-Through/Pipelined	256 k x 72	-	-	-	18 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8162Z72CGC-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182S36BD-375I Anlielectronics Тип	GSI Technology	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	18	-	Parallel	GSI Technology	-	375 MHz	375 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO DDR-II	1.8000 V	-	-40 to 85 °C	Tray	GS8182S36BD	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	-	-	905 mA	0.45	-	512 k x 36	-	-	-	-	SRAM	-	-	18	-	-	-	-	-	SRAM	-	-
GS8182S36BD-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662S18BGD-333 Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 4M x 18 72M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	15	-	Parallel	-	-	333 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaSIO DDR-II	-	-	-	Tray	GS8662S18BGD	-	-	-	SigmaSIO DDR-II	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	630 mA	-	-	4 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662S18BGD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81313LQ18GK-714I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.25V 8M x 18 144M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-260	-	-	-	-	DDR	10	-	Parallel	-	-	714 MHz	714 MHz	1.35 V	+ 100 C	DDR	1.2 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	BGA	1.35 V	1.2 V	-	Synchronous	SigmaQuad-IIIe	1.3000 V	Industrial grade	-40 to 100 °C	Tray	GS81313LQ18GK	-	-	-	SigmaQuad-IIIe B2	-	-	-	-	-	-	-	-	-	-	-	260	-	-	-	-	-	-	144 Mbit	1	-	1.7 A	-	-	8 M x 18	-	-	-	21 Bit	-	144 MB	-	-	Industrial	-	-	-	-	-	-	-
GS81313LQ18GK-714I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662S36BD-250 Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 2M x 36 72M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	15	-	Parallel	-	-	250 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaSIO DDR-II	-	-	-	Tray	GS8662S36BD	-	-	-	SigmaSIO DDR-II	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	730 mA	-	-	2 M x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662S36BD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82583ET18GK-550I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.5V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-260	-	-	-	-	-	10	-	Parallel	-	-	550 MHz	-	-	+ 100 C	DDR-III	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.35 V	1.25 V	-	-	SigmaDDR-IIIe	-	-	-	Tray	GS82583ET18GK	-	-	-	SigmaDDR-IIIe B2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	870 mA	-	-	16 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82583ET18GK-550I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS88132CGD-200,GS81302S18GE-300I,GS8662DT06BGD-450I,GS8640E36GT-250IV,GS8662D18BGD-300I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)