Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page5

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Access Mode	Self Refresh	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Access Mode	Self Refresh	Product Category	Length	Width
	Mfr. Тип GS8320Z36GT-166 Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, 8ns, CMOS, PQFP100, LEAD FREE, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	100	8 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS8320Z36GT-166	-	-	-	-	-	-	-	-	3	-	-	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.66	-	Yes	-	-	-	2.5 V	-	-	-	-	-	-	-	-	e3	Yes	3A991.B.2.B	-	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	-	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	-	-	SYNCHRONOUS	-	-	-	-	1MX36	-	1.6 mm	36	-	-	-	-	37748736 bit	-	PARALLEL	-	ZBT SRAM	-	-	-	-	-	20 mm	14 mm
GS8320Z36GT-166 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8160Z36BGT-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	100	6.5 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS8160Z36BGT-200I	-	-	-	-	-	-	-	-	3	-	-	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.68	-	Yes	-	-	-	2.5 V	-	-	-	-	-	-	-	-	e3	Yes	3A991.B.2.B	-	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	-	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.75 V	-	INDUSTRIAL	2.25 V	-	-	SYNCHRONOUS	-	-	-	-	512KX36	-	1.6 mm	36	-	-	-	-	18874368 bit	-	PARALLEL	-	ZBT SRAM	-	-	-	-	-	20 mm	14 mm
GS8160Z36BGT-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS72108AGP-8 Anlielectronics Тип	GSI Technology	Standard SRAM, 256KX8, 8ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	-	YES	44	8 ns	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS72108AGP-8	-	-	-	-	-	-	-	-	3	-	-	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.73	-	Yes	-	-	-	3.3 V	-	-	-	-	-	-	-	-	-	Yes	3A991.B.2.B	-	Pure Matte Tin (Sn)	-	8542.32.00.41	-	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant	44	R-PDSO-G44	Not Qualified	3.6 V	-	COMMERCIAL	3 V	-	-	ASYNCHRONOUS	0.115 mA	-	-	-	256KX8	3-STATE	1.2 mm	8	-	-	-	0.02 A	2097152 bit	-	PARALLEL	COMMON	STANDARD SRAM	3 V	YES	-	-	-	18.41 mm	10.16 mm
GS72108AGP-8 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302Q18GE-250 Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	QDR	10	GSI TECHNOLOGY	Parallel	GSI Technology	GS81302Q18GE-250	250 MHz	250 MHz	-	+ 70 C	QDR-II	-	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	8 MWords	8000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Not Recommended	BGA	NOT SPECIFIED	7.61	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	-	Commercial grade	0 to 85 °C	Tray	GS81302Q18GE	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	144 Mbit	2	SYNCHRONOUS	1.06 A	450 ps	Pipelined	-	8 M x 18	-	1.5 mm	18	22 Bit	SRAM	144 Mbit	-	150994944 bit	Commercial	PARALLEL	-	DDR SRAM	-	-	-	-	SRAM	17 mm	15 mm
GS81302Q18GE-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816236DGB-200E Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 512K x 36 18M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	-	21	-	Parallel	-	-	200 MHz	-	-	+ 125 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	-	Tray	GS816236DGB	-	-	-	Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	-	6.5 ns	-	-	512 k x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS816236DGB-200E GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS4576C36GL-24I Anlielectronics Тип	GSI Technology	DRAM 16M x 36 (288Meg) LLDRAM IICommon I/O Сборник данных Сравнение	Min.:1 Mult.:1	-	uBGA-144	YES	144	-	-	-	-	18	GSI TECHNOLOGY	-	-	GS4576C36GL-24I	400 MHz	-	-	+ 95 C	-	-	- 40 C	Yes	-	-	SMD/SMT	-	16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	End Of Life	BGA	NOT SPECIFIED	5.09	Details	Yes	-	1.9 V	1.7 V	1.8 V	-	-	-	0.423288 oz	-	-	Tray	-	-	-	3A991.B.2.B	SDRAM - DDR	-	AUTO/SELF REFRESH	8542.32.00.32	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	144	R-PBGA-B144	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	576 Mbit	1	SYNCHRONOUS	640 mA	-	-	36 bit	16 M x 36	-	1.2 mm	36	-	-	-	-	603979776 bit	-	-	-	DDR DRAM	-	-	MULTI BANK PAGE BURST	YES	-	18.5 mm	11 mm
GS4576C36GL-24I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672T19BGE-333 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	333 MHz	-	-	+ 70 C	DDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II+	-	-	-	-	Tray	GS8672T19BGE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	950 mA	-	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	-	-	-	SRAM	-	-
GS8672T19BGE-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816236DB-375I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4.2ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-119	YES	119	4.2 ns	GSI Technology	-	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS816236DB-375I	375 MHz	-	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.25	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	-	Industrial grade	-40 to 100 °C	Tray	GS816236DB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	-	2.7 V	-	INDUSTRIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	-	512 k x 36	-	1.99 mm	36	-	SRAM	18 Mbit	-	18874368 bit	Industrial	PARALLEL	-	CACHE SRAM	-	-	-	-	SRAM	22 mm	14 mm
GS816236DB-375I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342R18BGD-400 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	-	Commercial grade	0 to 85 °C	Tray	GS8342R18BGD	-	-	-	SigmaDDR-II B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	1	-	600 mA	-	Pipelined	-	2 M x 18	-	-	-	21 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	-	-	-	SRAM	-	-
GS8342R18BGD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z36CGT-250 Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 5.5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	5.5 ns	-	-	-	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CGT-250	250 MHz	-	-	+ 70 C	-	-	0 C	-	3	-	SMD/SMT	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.52	-	Yes	-	3.6 V	2.3 V	2.5 V	-	-	-	-	-	-	-	-	e3	Yes	3A991.B.2.B	-	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	-	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	-	COMMERCIAL	2.3 V	9 Mbit	-	SYNCHRONOUS	155 mA, 195 mA	5.5 ns	-	-	256 k x 36	-	1.6 mm	36	-	-	-	-	9437184 bit	-	PARALLEL	-	ZBT SRAM	-	-	-	-	-	20 mm	14 mm
GS881Z36CGT-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q20BE-450I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	450 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	-	Tray	GS8672Q20BE	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.51 A	-	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	-	-	-	SRAM	-	-
GS8672Q20BE-450I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816136DGT-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	-	Tray	GS816136DGT	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	230 mA, 250 mA	5.5 ns	-	-	512 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	-	-	-	SRAM	-	-
GS816136DGT-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8160E36DGT-200IV Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	200 MHz	200 MHz	2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	2.5, 3.3 V	-	Industrial grade	-40 to 85 °C	Tray	GS8160E36DGT	-	-	-	DCD Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	4	-	225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	-	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	-	-	-	SRAM	-	-
GS8160E36DGT-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D36BE-400I Anlielectronics Тип	GSI Technology	Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	400 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	-	Tray	GS8672D36BE	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.88 A	-	-	-	2 M x 36	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	-	-	-	SRAM	-	-
GS8672D36BE-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS881Z36CGT-150 Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	72	-	Parallel	GSI Technology	-	150 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	-	Tray	GS881Z36CGT	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	9 Mbit	-	-	130 mA, 140 mA	7.5 ns	-	-	256 k x 36	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	-	-	-	SRAM	-	-
GS881Z36CGT-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E32DGT-250 Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	-	Tray	GS8161E32DGT	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	230 mA, 250 mA	5.5 ns	-	-	512 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	-	-	-	SRAM	-	-
GS8161E32DGT-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q18BE-400I Anlielectronics Тип	GSI Technology	SRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	15	-	Parallel	-	-	400 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	-	Tray	GS8672Q18BE	-	-	-	SigmaQuad-II	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.38 A	-	-	-	4 M x 18	-	-	-	-	-	-	-	72	-	-	-	-	-	-	-	-	-	-	-
GS8672Q18BE-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84032CGB-150 Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 32 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84032CGB-150	150 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.18	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	-	Tray	GS84032CGB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	COMMERCIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	130 mA, 140 mA	7.5 ns	-	-	128 k x 32	-	1.99 mm	32	-	-	-	-	4194304 bit	-	PARALLEL	-	CACHE SRAM	-	-	-	-	-	22 mm	14 mm
GS84032CGB-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D18BGD-250 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	18	-	Parallel	GSI Technology	-	250 MHz	250 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	-	Commercial grade	0 to 70 °C	Tray	GS8182D18BGD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	2	-	420 mA	-	Pipelined	-	1 M x 18	-	-	-	18 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	-	-	-	SRAM	-	-
GS8182D18BGD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321E36AGD-150 Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX36, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E36AGD-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	-	Commercial grade	0 to 85 °C	Tray	GS8321E36AGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	TIN SILVER COPPER	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	-	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	-	-	-	SRAM	15 mm	13 mm
GS8321E36AGD-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8320Z36GT-166,GS8160Z36BGT-200I,GS72108AGP-8,GS81302Q18GE-250,GS816236DGB-200E.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)