[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Mount Package / Case Surface Mount Number of Pins Number of Terminals Access Time-Max Brand Clock Frequency-Max (fCLK) Data Rate Architecture Factory Pack QuantityFactory Pack Quantity Ihs Manufacturer Interface Type Manufacturer Manufacturer Part Number Maximum Clock Frequency Maximum Clock Rate Maximum Operating Supply Voltage Maximum Operating Temperature Memory Types Minimum Operating Supply Voltage Minimum Operating Temperature Moisture Sensitive Moisture Sensitivity Levels Mounting Mounting Styles Number of I/O Lines Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Supplier Package Supply Voltage-Max Supply Voltage-Min Supply Voltage-Nom (Vsup) Timing Type Tradename Typical Operating Supply Voltage Unit Weight Usage Level Operating Temperature Packaging Series JESD-609 Code Pbfree Code ECCN Code Type Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Pin Count JESD-30 Code Qualification Status Operating Supply Voltage Supply Voltage-Max (Vsup) Power Supplies Temperature Grade Supply Voltage-Min (Vsup) Max Supply Voltage Min Supply Voltage Memory Size Number of Ports Nominal Supply Current Operating Mode Supply Current-Max Access Time Architecture Data Bus Width Organization Output Characteristics Seated Height-Max Memory Width Address Bus Width Product Type Density Standby Current-Max Memory Density Screening Level Parallel/Serial I/O Type Sync/Async Word Size Memory IC Type Standby Voltage-Min Access Mode Self Refresh Product Category Length Width Radiation Hardening
GSI Technology GS832236AGB-150I
Mfr. Тип
GS832236AGB-150I
Anlielectronics Тип

GSI Technology
Cache SRAM, 1MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 8 Weeks - BGA-119 YES - 119 7.5 ns GSI Technology 150 MHz SDR 14 GSI TECHNOLOGY Parallel GSI Technology GS832236AGB-150I 150 MHz 133@Flow-Through/150@Pipelined MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V - 40 C Yes 3 Surface Mount SMD/SMT 36 Bit 1 MWords 1000000 85 °C -40 °C PLASTIC/EPOXY BGA BGA, BGA119,7X17,50 BGA119,7X17,50 RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.12 Details Yes FBGA 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V - Industrial grade -40 to 100 °C Tray GS832236AGB e1 Yes 3A991.B.2.B Pipeline/Flow Through Tin/Silver/Copper (Sn/Ag/Cu) - - ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL 260 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified - 2.7 V 2.5/3.3 V INDUSTRIAL 2.3 V - - 36 Mbit 4 - SYNCHRONOUS 210 mA, 220 mA 7.5 ns Flow-Through/Pipelined - 1 M x 36 3-STATE 1.99 mm 36 20 Bit SRAM 36 Mbit 0.04 A 37748736 bit Industrial PARALLEL COMMON - - CACHE SRAM 2.3 V - - SRAM 22 mm 14 mm -
    GS832236AGB-150I
    GS832236AGB-150I

    GSI Technology
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    GSI Technology GS864436E-200I
    Mfr. Тип
    GS864436E-200I
    Anlielectronics Тип

    		GSI Technology
    Cache SRAM, 2MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - BGA-165 - - - - GSI Technology - SDR 15 - Parallel GSI Technology - 200 MHz 153.8@Flow-Through/200@Pipelined MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V - 40 C Yes - Surface Mount SMD/SMT 36 Bit 2 MWords - - - - - - - - - - - - - - - FBGA 3.6 V 2.3 V - Synchronous SyncBurst 2.5, 3.3 V - Industrial grade -40 to 85 °C Tray GS864436E - - - Synchronous Burst - - - - - Memory & Data Storage - - - - - - - 165 - - - - - - - - - 72 Mbit 4 - - 295 mA, 380 mA 6.5 ns Flow-Through/Pipelined - 2 M x 36 - - - 21 Bit SRAM 72 Mbit - - Industrial - - - - - - - - SRAM - - -
      GS864436E-200I
      GS864436E-200I

      GSI Technology
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      GSI Technology GS816118DD-250
      Mfr. Тип
      GS816118DD-250
      Anlielectronics Тип

      		GSI Technology
      Cache SRAM, 1MX18, 5.5ns, CMOS, PBGA165, FPBGA-165
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - BGA-165 - - - - GSI Technology - - 36 - Parallel GSI Technology - 250 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS816118DD - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 210 mA, 230 mA 5.5 ns - - 1 M x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
        GS816118DD-250
        GS816118DD-250

        GSI Technology
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        GSI Technology GS816132DGD-200
        Mfr. Тип
        GS816132DGD-200
        Anlielectronics Тип

        		GSI Technology
        Cache SRAM, 512KX32, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - BGA-165 - - - - GSI Technology - - 36 - Parallel GSI Technology - 200 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS816132DGD - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 210 mA 6.5 ns - - 512 k x 32 - - - - SRAM - - - - - - - - - - - - SRAM - - -
          GS816132DGD-200
          GS816132DGD-200

          GSI Technology
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          GSI Technology GS8672D37BE-450I
          Mfr. Тип
          GS8672D37BE-450I
          Anlielectronics Тип

          		GSI Technology
          Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FPBGA-165
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - BGA-165 - - - - GSI Technology - - 15 - Parallel GSI Technology - 450 MHz - - + 85 C QDR-II - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - - - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - - Tray GS8672D37BE - - - SigmaQuad-II+ - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 72 Mbit - - - 2.07 A - - - 2 M x 36 - - - - SRAM - - 72 - - - - - - - - - SRAM - - -
            GS8672D37BE-450I
            GS8672D37BE-450I

            GSI Technology
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            GSI Technology GS8182D19BD-300
            Mfr. Тип
            GS8182D19BD-300
            Anlielectronics Тип

            		GSI Technology
            DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - BGA-165 - - - - GSI Technology - - 18 - Parallel GSI Technology - 300 MHz - - + 70 C DDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - - Tray GS8182D19BD - - - SigmaQuad II+ - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 490 mA - - - 1 M x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
              GS8182D19BD-300
              GS8182D19BD-300

              GSI Technology
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              GSI Technology GS8672Q19BGE-400I
              Mfr. Тип
              GS8672Q19BGE-400I
              Anlielectronics Тип

              		GSI Technology
              SRAM
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - BGA-165 - - - - - - - 15 - Parallel - - 400 MHz - - + 85 C QDR-II - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - - Tray GS8672Q19BGE - - - SigmaQuad-II+ - 100 °C -40 °C - - - - - - - - - - - - - 1.8 V - - - - - - 72 Mbit 2 - - 1.38 A - - - 4 M x 18 - - - 21 b - 72 Mb - 72 - - - - - - - - - - - - No
                GS8672Q19BGE-400I
                GS8672Q19BGE-400I

                GSI Technology
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                GSI Technology GS816118DGD-150
                Mfr. Тип
                GS816118DGD-150
                Anlielectronics Тип

                		GSI Technology
                Cache SRAM, 1MX18, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - BGA-165 - - - - GSI Technology - - 36 - Parallel GSI Technology - 150 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS816118DGD - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 170 mA, 180 mA 7.5 ns - - 1 M x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
                  GS816118DGD-150
                  GS816118DGD-150

                  GSI Technology
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  GSI Technology GS8321Z36AD-200
                  Mfr. Тип
                  GS8321Z36AD-200
                  Anlielectronics Тип

                  		GSI Technology
                  ZBT SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - BGA-165 - - - - - - SDR - - Parallel - - 200 MHz 153.8@Flow-Through/200@Pipelined MHz 2.7, 3.6 V + 70 C - 2.3, 3 V 0 C - - Surface Mount SMD/SMT 36 Bit 1 MWords - - - - - - - - - - - - - - - FBGA 3.6 V 2.3 V - Synchronous - 2.5, 3.3 V - Commercial grade 0 to 85 °C - - - - - - - - - - - - - - - - - - - 165 - - - - - - - - - 36 Mbit 4 - - 205 mA, 240 mA 6.5 ns Flow-Through/Pipelined - 1 M x 36 - - - 20 Bit - 36 Mbit - - Commercial - - - - - - - - - - - -
                    GS8321Z36AD-200
                    GS8321Z36AD-200

                    GSI Technology
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    GSI Technology GS832272GC-200
                    Mfr. Тип
                    GS832272GC-200
                    Anlielectronics Тип

                    		GSI Technology
                    Cache SRAM, 512KX72, 7.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 8 Weeks - BGA-209 YES - 209 7.5 ns GSI Technology 200 MHz - 14 GSI TECHNOLOGY Parallel GSI Technology GS832272GC-200 200 MHz - 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes 3 - SMD/SMT 72 Bit 524288 words 512000 70 °C - PLASTIC/EPOXY LBGA LBGA, BGA209,11X19,40 BGA209,11X19,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 1.45 Details Yes - 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V - Commercial grade 0 to 70 °C Tray GS832272GC e1 Yes 3A991.B.2.B SCD/DCD Pipeline/Flow Through TIN SILVER COPPER - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL 260 1 1 mm compliant 209 R-PBGA-B209 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - 36 Mbit - - SYNCHRONOUS 235 mA, 320 mA 7.5@Flow-Through/3@P - - 512 k x 72 3-STATE 1.7 mm 72 - SRAM - 0.06 A 36 Commercial PARALLEL COMMON - - CACHE SRAM 2.38 V - - SRAM 22 mm 14 mm -
                      GS832272GC-200
                      GS832272GC-200

                      GSI Technology
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      GSI Technology GS8162Z18DGB-250I
                      Mfr. Тип
                      GS8162Z18DGB-250I
                      Anlielectronics Тип

                      		GSI Technology
                      ZBT SRAM, 1MX18, 5.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 10 Weeks - BGA-119 YES - 119 5.5 ns GSI Technology - - 21 GSI TECHNOLOGY Parallel GSI Technology GS8162Z18DGB-250I 250 MHz - - + 85 C SDR - - 40 C Yes - - SMD/SMT - 1048576 words 1000000 85 °C -40 °C PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.26 Details Yes - 3.6 V 2.3 V 2.5 V - NBT SRAM - - - - Tray GS8162Z18DGB - - 3A991.B.2.B NBT Pipeline/Flow Through - - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified - 2.7 V - INDUSTRIAL 2.3 V - - 18 Mbit - - SYNCHRONOUS 230 mA, 250 mA 5.5 ns - - 1 M x 18 - 1.99 mm 18 - SRAM - - 18874368 bit - PARALLEL - - - ZBT SRAM - - - SRAM 22 mm 14 mm -
                        GS8162Z18DGB-250I
                        GS8162Z18DGB-250I

                        GSI Technology
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        GSI Technology GS4576C36GL-25I
                        Mfr. Тип
                        GS4576C36GL-25I
                        Anlielectronics Тип

                        		GSI Technology
                        DRAM 16M x 36 (288Meg) LLDRAM IICommon I/O
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - uBGA-144 YES - 144 - - - - 18 GSI TECHNOLOGY - - GS4576C36GL-25I 400 MHz - - + 95 C - - - 40 C Yes - - SMD/SMT - 16777216 words 16000000 85 °C -40 °C PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH End Of Life BGA NOT SPECIFIED 5.09 Details Yes - 1.9 V 1.7 V 1.8 V - - - 0.423288 oz - - Tray - - - 3A991.B.2.B SDRAM - DDR - - - AUTO/SELF REFRESH 8542.32.00.32 - CMOS BOTTOM BALL NOT SPECIFIED 1 0.8 mm compliant 144 R-PBGA-B144 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 576 Mbit 1 - SYNCHRONOUS 570 mA 20 ns - 36 bit 16 M x 36 - 1.2 mm 36 - - - - 603979776 bit - - - - - DDR DRAM - MULTI BANK PAGE BURST YES - 18.5 mm 11 mm -
                          GS4576C36GL-25I
                          GS4576C36GL-25I

                          GSI Technology
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          GSI Technology GS4576C18GL-25I
                          Mfr. Тип
                          GS4576C18GL-25I
                          Anlielectronics Тип

                          		GSI Technology
                          DRAM 32M x 18 (288Meg) LLDRAM IICommon I/O
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - uBGA-144 YES - 144 - - - - 18 GSI TECHNOLOGY - - GS4576C18GL-25I 400 MHz - - + 95 C - - - 40 C Yes - - SMD/SMT - 33554432 words 32000000 85 °C -40 °C PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH End Of Life BGA NOT SPECIFIED 5.09 Details Yes - 1.9 V 1.7 V 1.8 V - - - 0.423288 oz - - Tray - - - 3A991.B.2.B SDRAM - DDR - - - AUTO/SELF REFRESH 8542.32.00.32 - CMOS BOTTOM BALL NOT SPECIFIED 1 0.8 mm compliant 144 R-PBGA-B144 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 576 Mbit 1 - SYNCHRONOUS 500 mA 20 ns - 18 bit 32 M x 18 - 1.2 mm 18 - - - - 603979776 bit - - - - - DDR DRAM - MULTI BANK PAGE BURST YES - 18.5 mm 11 mm -
                            GS4576C18GL-25I
                            GS4576C18GL-25I

                            GSI Technology
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            GSI Technology GS816018BGT-150
                            Mfr. Тип
                            GS816018BGT-150
                            Anlielectronics Тип

                            		GSI Technology
                            Cache SRAM, 1MX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - - YES - 100 7.5 ns - 150 MHz - - GSI TECHNOLOGY - GSI Technology GS816018BGT-150 - - - - - - - - 3 - - - 1048576 words 1000000 70 °C - PLASTIC/EPOXY LQFP LQFP, QFP100,.63X.87 QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE Obsolete QFP NOT SPECIFIED 5.39 - Yes - - - 2.5 V - - - - - - - - e3 Yes 3A991.B.2.B - PURE MATTE TIN - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 SRAMs CMOS QUAD GULL WING 260 1 0.65 mm compliant 100 R-PQFP-G100 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - - - - SYNCHRONOUS 0.185 mA - - - 1MX18 3-STATE 1.6 mm 18 - - - 0.04 A 18874368 bit - PARALLEL COMMON - - CACHE SRAM 2.3 V - - - 20 mm 14 mm -
                              GS816018BGT-150
                              GS816018BGT-150

                              GSI Technology
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              GSI Technology GS74116AGP-10
                              Mfr. Тип
                              GS74116AGP-10
                              Anlielectronics Тип

                              		GSI Technology
                              Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 6 Weeks Surface Mount TSOP-44 YES 44 44 10 ns GSI Technology - - 135 GSI TECHNOLOGY Parallel GSI Technology GS74116AGP-10 - - 3.6 V + 70 C SDR 3 V 0 C Yes 3 Surface Mount SMD/SMT 16 Bit 256 kWords 256000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44,.46,32 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Active TSOP2 NOT SPECIFIED 1.36 Compliant Yes TSOP-II 3.6 V 3 V 3.3 V Asynchronous - 3.3000 V 0.016882 oz Commercial grade 0 to 70 °C - GS74116AGP e3 Yes 3A991.B.2.B Asynchronous Matte Tin (Sn) 70 °C 0 °C - 8542.32.00.41 Memory & Data Storage CMOS DUAL GULL WING 260 1 0.8 mm compliant 44 R-PDSO-G44 Not Qualified 3.3 V 3.6 V 3.3 V COMMERCIAL 3 V 3.6 V 3 V 4 Mbit 1 105 mA ASYNCHRONOUS 105 mA 10 ns - - 256 k x 16 3-STATE 1.2 mm 16 18 Bit SRAM 4 Mbit 0.01 A 4194304 bit Commercial PARALLEL COMMON Asynchronous 16 b STANDARD SRAM 3 V - - SRAM 18.41 mm 10.16 mm No
                                GS74116AGP-10
                                GS74116AGP-10

                                GSI Technology
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                GSI Technology GS81302TT38GE-500I
                                Mfr. Тип
                                GS81302TT38GE-500I
                                Anlielectronics Тип

                                		GSI Technology
                                DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - BGA-165 - - - - GSI Technology - - 10 - Parallel GSI Technology - 500 MHz - 1.9 V + 85 C DDR-II 1.7 V - 40 C Yes - - SMD/SMT 36 Bit - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - Synchronous SigmaDDR-II+ 1.8000 V - Industrial grade -40 to 100 °C Tray GS81302TT38GE - - - SigmaDDR-II+ - - - - - Memory & Data Storage - - - - - - - 165 - - - - - - - - - 144 Mbit - - - 1.31 A 0.45 - - 4 M x 36 - - - - SRAM - - 144 Industrial - - - - - - - - SRAM - - -
                                  GS81302TT38GE-500I
                                  GS81302TT38GE-500I

                                  GSI Technology
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  GSI Technology GS81302TT19E-400I
                                  Mfr. Тип
                                  GS81302TT19E-400I
                                  Anlielectronics Тип

                                  		GSI Technology
                                  DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 12 Weeks - BGA-165 YES - 165 0.45 ns GSI Technology - DDR 10 GSI TECHNOLOGY Parallel GSI Technology GS81302TT19E-400I 400 MHz 400 MHz 1.9 V + 85 C DDR-II 1.7 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 8 MWords 8000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Not Recommended BGA NOT SPECIFIED 5.06 - No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaDDR-II+ 1.8000 V - Industrial grade -40 to 100 °C Tray GS81302TT19E - No 3A991.B.2.B SigmaDDR-II+ B2 - - - PIPELINED ARCHITECTURE, LATE WRITE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 144 Mbit 1 - SYNCHRONOUS 905 mA - Pipelined - 8 M x 18 - 1.5 mm 18 22 Bit SRAM 144 Mbit - 150994944 bit Industrial PARALLEL - - - DDR SRAM - - - SRAM 17 mm 15 mm -
                                    GS81302TT19E-400I
                                    GS81302TT19E-400I

                                    GSI Technology
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    GSI Technology GS832218AB-150
                                    Mfr. Тип
                                    GS832218AB-150
                                    Anlielectronics Тип

                                    		GSI Technology
                                    Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 8 Weeks - BGA-119 YES - 119 7.5 ns - 150 MHz SDR - GSI TECHNOLOGY Parallel GSI Technology GS832218AB-150 150 MHz 133@Flow-Through/150@Pipelined MHz 2.7, 3.6 V + 70 C - 2.3, 3 V 0 C - - Surface Mount SMD/SMT 18 Bit 2 MWords 2000000 70 °C - PLASTIC/EPOXY BGA BGA, BGA119,7X17,50 BGA119,7X17,50 RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.11 - No FBGA 3.6 V 2.3 V 2.5 V Synchronous - 2.5, 3.3 V - Commercial grade 0 to 85 °C - - e0 No 3A991.B.2.B - Tin/Lead (Sn/Pb) - - ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH 8542.32.00.41 SRAMs CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - 36 Mbit 2 - SYNCHRONOUS 175 mA, 190 mA 7.5 ns Flow-Through/Pipelined - 2 M x 18 3-STATE 1.99 mm 18 21 Bit - 36 Mbit 0.03 A 37748736 bit Commercial PARALLEL COMMON - - CACHE SRAM 2.3 V - - - 22 mm 14 mm -
                                      GS832218AB-150
                                      GS832218AB-150

                                      GSI Technology
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      GSI Technology GS832218AB-333
                                      Mfr. Тип
                                      GS832218AB-333
                                      Anlielectronics Тип

                                      		GSI Technology
                                      Cache SRAM, 2MX18, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 8 Weeks - BGA-119 YES - 119 4.5 ns - 333 MHz SDR - GSI TECHNOLOGY Parallel GSI Technology GS832218AB-333 333 MHz 222@Flow-Through/333@Pipelined MHz 2.7, 3.6 V + 70 C - 2.3, 3 V 0 C - - Surface Mount SMD/SMT 18 Bit 2 MWords 2000000 70 °C - PLASTIC/EPOXY BGA BGA, BGA119,7X17,50 BGA119,7X17,50 RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.11 - No FBGA 3.6 V 2.3 V 2.5 V Synchronous - 2.5, 3.3 V - Commercial grade 0 to 85 °C - GS832218AB e0 No 3A991.B.2.B - Tin/Lead (Sn/Pb) - - ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH 8542.32.00.41 SRAMs CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - 36 Mbit 2 - SYNCHRONOUS 0.3 mA 4.5 ns Flow-Through/Pipelined - 2MX18 3-STATE 1.99 mm 18 21 Bit - 36 Mbit 0.03 A 37748736 bit Commercial PARALLEL COMMON - - CACHE SRAM 2.3 V - - - 22 mm 14 mm -
                                        GS832218AB-333
                                        GS832218AB-333

                                        GSI Technology
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        GSI Technology GS8162Z18DB-150IV
                                        Mfr. Тип
                                        GS8162Z18DB-150IV
                                        Anlielectronics Тип

                                        		GSI Technology
                                        ZBT SRAM, 1MX18, 7.5ns, CMOS, PBGA119, FPBGA-119
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - BGA-119 - - - - GSI Technology - SDR 21 - Parallel GSI Technology - 150 MHz 133.3@Flow-Through/150@Pipelined MHz 2, 2.7 V + 85 C SDR 1.7, 2.3 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 1 MWords - - - - - - - - - - - - - - - FBGA 2.7 V 1.7 V - Synchronous NBT SRAM 1.8, 2.5 V - Industrial grade -40 to 100 °C Tray GS8162Z18DB - - - NBT Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - 119 - - - - - - - - - 18 Mbit 2 - - 180 mA, 200 mA 7.5 ns Flow-Through/Pipelined - 1 M x 18 - - - 20 Bit SRAM 18 Mbit - - Industrial - - - - - - - - SRAM - - -
                                          GS8162Z18DB-150IV
                                          GS8162Z18DB-150IV

                                          GSI Technology
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS832236AGB-150I,GS864436E-200I,GS816118DD-250,GS816132DGD-200,GS8672D37BE-450I.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.