Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page3

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Contact plating	Surface Mount	Number of pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Connector	Connector pinout layout	Contacts pitch	Date Of Intro	Electrical mounting	Gross weight	Ihs Manufacturer	Kind of connector	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Row pitch	Spatial orientation	Supply Voltage-Nom (Vsup)	Type of connector	Operating temperature	ECCN Code	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Current rating	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	I/O Type	Memory IC Type	Rated voltage	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Profile	Self Refresh	Length	Width	Plating thickness	Flammability rating

Изображение	Тип	Марка	Объяснение	Количество	Contact plating	Surface Mount	Number of pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Connector	Connector pinout layout	Contacts pitch	Date Of Intro	Electrical mounting	Gross weight	Ihs Manufacturer	Kind of connector	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Row pitch	Spatial orientation	Supply Voltage-Nom (Vsup)	Type of connector	Operating temperature	ECCN Code	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Current rating	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	I/O Type	Memory IC Type	Rated voltage	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Profile	Self Refresh	Length	Width	Plating thickness	Flammability rating
	Mfr. Тип NT6TL128M32AI-G1 Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 128MX32, 5.5ns, CMOS, PBGA134, 11.50 X 11.50 MM, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, BGA-134 Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	134	5.5 ns	400 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	134217728 words	128000000	85 °C	-25 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA134,10X17,25	BGA134,10X17,25	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	-	Yes	-	-	1.8 V	-	-	EAR99	AUTO/SELF REFRESH; ALSO REQURIES 1.2V	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.65 mm	compliant	-	NOT SPECIFIED	-	S-PBGA-B134	Not Qualified	1.95 V	OTHER	1.7 V	1	SYNCHRONOUS	-	128MX32	3-STATE	0.79 mm	32	-	4294967296 bit	COMMON	LPDDR2 DRAM	-	8192	4,8,16	4,8,16	MULTI BANK PAGE BURST	-	YES	11.5 mm	11.5 mm	-	-
NT6TL128M32AI-G1 Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип N2TU51216BG-3C Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 0.80 X 0.80 MM PITCH, GREEN, BGA-84 Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	84	0.45 ns	-	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	33554432 words	32000000	85 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	-	-	-	1.8 V	-	-	EAR99	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	-	1	0.8 mm	compliant	-	-	84	R-PBGA-B84	Not Qualified	1.9 V	OTHER	1.7 V	1	SYNCHRONOUS	-	32MX16	-	1.2 mm	16	-	536870912 bit	-	DDR DRAM	-	-	-	-	FOUR BANK PAGE BURST	-	YES	12.5 mm	10 mm	-	-
N2TU51216BG-3C Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип N2CB1GH80BN-CG Anlielectronics Тип	Nanya Technology Corporation	DRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	-	-	-	-	-	-	,	-	-	-	Active	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
N2CB1GH80BN-CG Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5AD1024M8C3-HR Anlielectronics Тип	Nanya Technology Corporation	DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	78	-	1333 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	1073741824 words	1000000000	95 °C	-	PLASTIC/EPOXY	TFBGA	,	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	Yes	-	-	1.2 V	-	-	EAR99	-	-	BOTTOM	BALL	-	1	0.8 mm	compliant	-	-	-	R-PBGA-B78	-	1.26 V	OTHER	1.14 V	1	SYNCHRONOUS	0.212 mA	1GX8	3-STATE	1.2 mm	8	0.022 A	8589934592 bit	COMMON	DDR4 DRAM	-	-	8	8	FOUR BANK PAGE BURST	-	YES	12 mm	7.5 mm	-	-
NT5AD1024M8C3-HR Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5CB64M16DP-EJ Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	96	0.195 ns	933 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	67108864 words	64000000	85 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	-	Yes	-	-	1.5 V	-	-	EAR99	AUTO/SELF REFRESH	8542.32.00.32	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	-	NOT SPECIFIED	-	R-PBGA-B96	Not Qualified	1.575 V	OTHER	1.425 V	1	SYNCHRONOUS	0.403 mA	64MX16	3-STATE	1.2 mm	16	0.014 A	1073741824 bit	COMMON	DDR3 DRAM	-	8192	4,8	4,8	MULTI BANK PAGE BURST	-	YES	13 mm	9 mm	-	-
NT5CB64M16DP-EJ Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5AD256M16E4-JR Anlielectronics Тип	Nanya Technology Corporation	DDR4 DRAM, 256MX16, CMOS, PBGA96, Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	96	-	1600 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	268435456 words	256000000	95 °C	-	PLASTIC/EPOXY	TFBGA	-	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	Yes	-	-	1.2 V	-	-	-	-	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	-	R-PBGA-B96	-	1.26 V	-	1.14 V	1	SYNCHRONOUS	0.348 mA	256MX16	-	1.2 mm	16	0.059 A	4294967296 bit	COMMON	DDR4 DRAM	-	-	4,8	4,8	FOUR BANK PAGE BURST	-	YES	13 mm	7.5 mm	-	-
NT5AD256M16E4-JR Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5CB512M8DN-DI Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 512MX8, CMOS, PBGA78, VFBGA-78 Сборник данных Сравнение	Min.:1 Mult.:1	gold-plated	YES	20	78	-	-	socket	2x10	2.54mm	-	THT	1.2 g	NANYA TECHNOLOGY CORP	female	536870912 words	512000000	85 °C	-	PLASTIC/EPOXY	VFBGA	VFBGA,	-	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	-	Yes	2.54mm	straight	1.5 V	pin strips	-40...163°C	EAR99	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	1.5A	NOT SPECIFIED	-	R-PBGA-B78	-	1.575 V	OTHER	1.425 V	1	SYNCHRONOUS	-	512MX8	-	1 mm	8	-	4294967296 bit	-	DDR DRAM	60V	-	-	-	MULTI BANK PAGE BURST	beryllium copper	YES	10.5 mm	9 mm	0.75µm	UL94V-0
NT5CB512M8DN-DI Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT6AN512M16AV-J2 Anlielectronics Тип	Nanya Technology Corporation	Description: DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	200	-	1866 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	536870912 words	512000000	105 °C	-30 °C	PLASTIC/EPOXY	VFBGA	FBGA-200	BGA200,12X22,32/25	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Active	-	Yes	-	-	1.1 V	-	-	EAR99	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMIMAL SUPPLY VOLTAGE; TERM PITCH-MAX	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	-	NOT SPECIFIED	-	R-PBGA-B200	-	1.17 V	OTHER	1.06 V	1	SYNCHRONOUS	0.34 mA	512MX16	3-STATE	1 mm	16	0.03 A	8589934592 bit	COMMON	LPDDR4 DRAM	-	8192	16,32	16,32	MULTI BANK PAGE BURST	-	YES	15 mm	10 mm	-	-
NT6AN512M16AV-J2 Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT6TL256T32AQ-G0 Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 256MX32, 5.5ns, CMOS, PBGA168, 12 X 12 MM, 0.50 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, BGA-168 Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	168	5.5 ns	533 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	268435456 words	256000000	85 °C	-25 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA168,23X23,20	BGA168,23X23,20	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	-	Yes	-	-	1.8 V	-	-	EAR99	AUTO/SELF REFRESH; ALSO REQURIES 1.2V	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.5 mm	compliant	-	NOT SPECIFIED	-	S-PBGA-B168	Not Qualified	1.95 V	OTHER	1.7 V	1	SYNCHRONOUS	-	256MX32	3-STATE	0.79 mm	32	-	8589934592 bit	COMMON	LPDDR2 DRAM	-	8192	4,8,16	4,8,16	MULTI BANK PAGE BURST	-	YES	12 mm	12 mm	-	-
NT6TL256T32AQ-G0 Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5CC256M8FN-DII Anlielectronics Тип	Nanya Technology Corporation	DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, TFBGA-78 Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	78	0.225 ns	800 MHz	-	-	-	-	-	-	NANYA TECHNOLOGY CORP	-	268435456 words	256000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	-	Yes	-	-	1.35 V	-	-	EAR99	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	-	NOT SPECIFIED	-	R-PBGA-B78	Not Qualified	1.45 V	INDUSTRIAL	1.283 V	1	SYNCHRONOUS	0.21 mA	256MX8	3-STATE	1.2 mm	8	0.003 A	2147483648 bit	COMMON	DDR3L DRAM	-	8192	4,8	4,8	MULTI BANK PAGE BURST	-	YES	10.5 mm	8 mm	-	-
NT5CC256M8FN-DII Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NT5AD1024M8C3-JR Anlielectronics Тип	Nanya Technology Corporation	DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	-	YES	-	78	-	1600 MHz	-	-	-	2020-08-18	-	-	NANYA TECHNOLOGY CORP	-	1073741824 words	1000000000	95 °C	-	PLASTIC/EPOXY	TFBGA	,	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	-	-	-	1.2 V	-	-	EAR99	-	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	-	R-PBGA-B78	-	1.26 V	OTHER	1.14 V	1	SYNCHRONOUS	0.212 mA	1GX8	3-STATE	1.2 mm	8	0.023 A	8589934592 bit	COMMON	DDR4 DRAM	-	-	8	8	FOUR BANK PAGE BURST	-	YES	12 mm	7.5 mm	-	-
NT5AD1024M8C3-JR Nanya Technology Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: NT6TL128M32AI-G1,N2TU51216BG-3C,N2CB1GH80BN-CG,NT5AD1024M8C3-HR,NT5CB64M16DP-EJ.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 51 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)