| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Access Time | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипEM6GC16EWKG-10IHAnlielectronics Тип | Etron Technology, Inc. |
1GB 64MX16 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 96-VFBGA | - | Volatile | -40°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | - | 1Gb 64M x 16 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6GC16EWKG-10IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM639165BM-5HAnlielectronics Тип | Etron Technology, Inc. |
128MB 8MX16 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 54-TFBGA | - | Volatile | 0°C~70°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | - | 128Mb 8M x 16 | - | - | 200MHz | 4.5ns | DRAM | Parallel | - | - | 10ns | - | - | - | - | - | ||
| EM639165BM-5H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GE08EW9G-10HAnlielectronics Тип | Etron Technology, Inc. |
IC MEM 4GB 512MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | - | - | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| EM6GE08EW9G-10H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6HE16EWXD-10HAnlielectronics Тип | Etron Technology, Inc. |
4GB 256MX16 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 96-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | - | - | - | - | 1.283V~1.45V | - | - | - | - | - | - | - | - | - | - | 4Gb 256M x 16 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6HE16EWXD-10H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GE08EW9G-10IHAnlielectronics Тип | Etron Technology, Inc. |
IC MEM DRAM DDR3 4GB 78FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | - | - | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| EM6GE08EW9G-10IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM68A16CBQC-25IHAnlielectronics Тип | Etron Technology, Inc. |
256MB 16MX16 DDR2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 84-TFBGA | - | Volatile | -40°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.7V~1.9V | - | - | - | - | - | - | - | - | - | - | 256Mb 16M x 16 | - | - | 400MHz | 400ps | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM68A16CBQC-25IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GC08EWUG-10IHAnlielectronics Тип | Etron Technology, Inc. |
1GB 128MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 78-VFBGA | - | Volatile | -40°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6GC08EWUG-10IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6HD08EWAHH-12IHAnlielectronics Тип | Etron Technology, Inc. |
IC MEM DRAM DDR3 2GB 78FBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 78-VFBGA | - | Volatile | -40°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.283V~1.45V | - | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | - | 800MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | ROHS3 Compliant | ||
| EM6HD08EWAHH-12IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6A9160TSC-4GAnlielectronics Тип | Etron Technology, Inc. |
128MB 8MX16 DDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | 66 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 2.3V~2.7V | DUAL | NOT SPECIFIED | 1 | 2.5V | 0.65mm | compliant | NOT SPECIFIED | R-PDSO-G66 | 2.7V | 2.3V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 250MHz | 700ps | DRAM | Parallel | 8MX16 | 16 | 12ns | 134217728 bit | 1.2mm | 22.22mm | 10.16mm | RoHS Compliant | ||
| EM6A9160TSC-4G | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6AA160TSE-4GAnlielectronics Тип | Etron Technology, Inc. |
256MB 16MX16 DDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | - | Volatile | 0°C~70°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 2.3V~2.7V | - | - | - | - | - | - | - | - | - | - | 256Mb 16M x 16 | - | - | 250MHz | 700ps | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6AA160TSE-4G | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6AA160TSE-4IGAnlielectronics Тип | Etron Technology, Inc. |
256MB 16MX16 DDR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | - | Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 2.3V~2.7V | - | - | - | - | - | - | - | - | - | - | 256Mb 16M x 16 | - | - | 250MHz | 700ps | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6AA160TSE-4IG | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GD08EWUF-10HAnlielectronics Тип | Etron Technology, Inc. |
2GB 256MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 78-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6GD08EWUF-10H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GE16EWAKG-10HAnlielectronics Тип | Etron Technology, Inc. |
IC MEM 4GB 256MX16 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 96-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | - | 4Gb 256M x 16 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | ROHS3 Compliant | ||
| EM6GE16EWAKG-10H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6HE08EW3F-12HAnlielectronics Тип | Etron Technology, Inc. |
IC MEM 4GB 512MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 78-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.283V~1.45V | - | - | - | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | - | 800MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | ROHS3 Compliant | ||
| EM6HE08EW3F-12H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM63A165TS-5IGAnlielectronics Тип | Etron Technology, Inc. |
256MB 16MX16 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | compliant | NOT SPECIFIED | R-PDSO-G54 | 3.6V | 3V | 256Mb 16M x 16 | 1 | SYNCHRONOUS | 200MHz | 4.5ns | DRAM | Parallel | 16MX16 | 16 | 10ns | 268435456 bit | 1.2mm | 22.22mm | 10.16mm | RoHS Compliant | ||
| EM63A165TS-5IG | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6GE08EW8D-10HAnlielectronics Тип | Etron Technology, Inc. |
4GB 512MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 78-VFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | - | - | - | - | 1.425V~1.575V | - | - | - | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6GE08EW8D-10H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM639165TS-5IGAnlielectronics Тип | Etron Technology, Inc. |
128MB 8MX16 SDRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | - | Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | - | - | - | 128Mb 8M x 16 | - | - | 200MHz | 4.5ns | DRAM | Parallel | - | - | 10ns | - | - | - | - | - | ||
| EM639165TS-5IG | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM68B08CWAH-25HAnlielectronics Тип | Etron Technology, Inc. |
512MB 64MX8 DDR2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 60-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.7V~1.9V | - | - | - | - | - | - | - | - | - | - | 512M 64M x 8 | - | - | 400MHz | 400ps | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM68B08CWAH-25H | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM68B08CWAH-25IHAnlielectronics Тип | Etron Technology, Inc. |
512MB 64MX8 DDR2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 60-TFBGA | - | Volatile | -40°C~95°C TC | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | - | 1.7V~1.9V | - | - | - | - | - | - | - | - | - | - | 512M 64M x 8 | - | - | 400MHz | 400ps | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM68B08CWAH-25IH | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEM6HD08EWUF-10HAnlielectronics Тип | Etron Technology, Inc. |
2GB 256MX8 DDR3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 78-TFBGA | - | Volatile | 0°C~95°C TC | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | - | - | - | - | 1.283V~1.45V | - | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | - | 933MHz | 20ns | DRAM | Parallel | - | - | 15ns | - | - | - | - | - | ||
| EM6HD08EWUF-10H |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ






