| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Total Dose | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипSN5489JAnlielectronics Тип | AMD |
Standard SRAM, 16X4, TTL, CDIP16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | - | - | ADVANCED MICRO DEVICES INC | - | 16 words | 16 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T16 | Not Qualified | - | MILITARY | - | - | ASYNCHRONOUS | - | 16X4 | OPEN-COLLECTOR | - | 4 | - | - | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | ||
| SN5489J | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27LS01/BEAAnlielectronics Тип | AMD |
Standard SRAM, 256X1, 55ns, TTL, CDIP16, HERMETIC SEALED, CERAMIC, DIP-16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | 55 ns | - | ADVANCED MICRO DEVICES INC | - | 256 words | 256 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 16 | R-GDIP-T16 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | - | 256X1 | OPEN-COLLECTOR | 5.08 mm | 1 | - | 256 bit | 38535Q/M;38534H;883B | PARALLEL | - | STANDARD SRAM | - | NO | - | - | 19.431 mm | 7.62 mm | ||
| AM27LS01/BEA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM9140ADCAnlielectronics Тип | AMD |
Description: Standard SRAM, 4KX1, 500ns, MOS, CDIP22, HERMETIC SEALED, SIDE BRAZED, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | 500 ns | - | ADVANCED MICRO DEVICES INC | - | 4096 words | 4000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP22,.4 | DIP22,.4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 22 | R-CDIP-T22 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | - | 4KX1 | 3-STATE | 5.08 mm | 1 | - | 4096 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | - | YES | - | - | 27.432 mm | 10.16 mm | ||
| AM9140ADC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXQR1701LCCG44MAnlielectronics Тип | AMD |
Configuration Memory, 1MX1, Serial, CMOS, CQCC44, CERAMIC, LCC-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | - | 15 MHz | ADVANCED MICRO DEVICES INC | - | 1048576 words | 1000000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCJ | CERAMIC, LCC-44 | - | SQUARE | CHIP CARRIER | Active | - | Yes | 3.3 V | e3 | - | - | MATTE TIN | - | - | QUAD | J BEND | - | 1 | 1.27 mm | compliant | - | - | S-CQCC-J44 | Not Qualified | 3.6 V | MILITARY | 3 V | - | SYNCHRONOUS | - | 1MX1 | - | 4.826 mm | 1 | - | 1048576 bit | - | SERIAL | - | CONFIGURATION MEMORY | - | - | - | 50k Rad(Si) V | 16.51 mm | 16.51 mm | ||
| XQR1701LCCG44M | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXQR1701LCCG44VAnlielectronics Тип | AMD |
Configuration Memory, 1MX1, Serial, CMOS, CQCC44, CERAMIC, LCC-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | - | 15 MHz | ADVANCED MICRO DEVICES INC | - | 1048576 words | 1000000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCJ | CERAMIC, LCC-44 | - | SQUARE | CHIP CARRIER | Active | - | Yes | 3.3 V | e3 | - | - | MATTE TIN | - | - | QUAD | J BEND | - | 1 | 1.27 mm | compliant | - | - | S-CQCC-J44 | Not Qualified | 3.6 V | MILITARY | 3 V | - | SYNCHRONOUS | - | 1MX1 | - | 4.826 mm | 1 | - | 1048576 bit | - | SERIAL | - | CONFIGURATION MEMORY | - | - | - | 50k Rad(Si) V | 16.51 mm | 16.51 mm | ||
| XQR1701LCCG44V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM91L14BDMBAnlielectronics Тип | AMD |
Standard SRAM, 1KX4, 450ns, MOS, CDIP18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 18 | 450 ns | - | ADVANCED MICRO DEVICES INC | - | 1024 words | 1000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T18 | Not Qualified | - | MILITARY | - | - | ASYNCHRONOUS | - | 1KX4 | 3-STATE | - | 4 | - | 4096 bit | MIL-STD-883 Class B (Modified) | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | ||
| AM91L14BDMB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM2167-70/BRAAnlielectronics Тип | AMD |
Standard SRAM, 16KX1, 70ns, NMOS, CDIP20, CERAMIC, DIP-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 20 | 70 ns | - | ADVANCED MICRO DEVICES INC | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP20,.3 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 20 | R-GDIP-T20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 16KX1 | 3-STATE | 5.08 mm | 1 | - | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | SEPARATE | STANDARD SRAM | - | NO | - | - | 24.257 mm | 7.62 mm | ||
| AM2167-70/BRA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXQ17V16CCG44MAnlielectronics Тип | AMD |
Configuration Memory, 2MX8, 20ns, Parallel/serial, CMOS, CQCC44, CERAMIC, LCC-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | 20 ns | - | ADVANCED MICRO DEVICES INC | - | 2097152 words | 2000000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCJ | CERAMIC, LCC-44 | - | SQUARE | CHIP CARRIER | Active | - | Yes | 3.3 V | - | - | - | - | - | - | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | compliant | NOT SPECIFIED | - | S-CQCC-J44 | Not Qualified | 3.6 V | MILITARY | 3 V | - | SYNCHRONOUS | - | 2MX8 | - | 4.826 mm | 8 | - | 16777216 bit | - | PARALLEL/SERIAL | - | CONFIGURATION MEMORY | - | - | - | - | 16.51 mm | 16.51 mm | ||
| XQ17V16CCG44M | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM9016DDLBAnlielectronics Тип | AMD |
Description: Page Mode DRAM, 16KX1, 250ns, MOS, CDIP16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | 250 ns | - | ADVANCED MICRO DEVICES INC | - | 16384 words | 16000 | 85 °C | -55 °C | CERAMIC | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.02 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T16 | - | - | OTHER | - | - | - | - | 16KX1 | 3-STATE | - | 1 | - | 16384 bit | - | - | SEPARATE | PAGE MODE DRAM | - | - | 128 | - | - | - | ||
| AM9016DDLB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM99C88H-70DCAnlielectronics Тип | AMD |
Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, 0.600 INCH, HERMETIC SEALED, CERAMIC, DIP-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 70 ns | - | ADVANCED MICRO DEVICES INC | - | 8192 words | 8000 | 70 °C | - | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.11 mA | 8KX8 | 3-STATE | 5.588 mm | 8 | - | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | - | - | 37.1475 mm | 15.24 mm | ||
| AM99C88H-70DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27C4096-120DIAnlielectronics Тип | AMD |
UVPROM, 256KX16, 120ns, CMOS, CDIP40, WINDOWED, CERAMIC, DIP-40
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 40 | 120 ns | - | ADVANCED MICRO DEVICES INC | - | 262144 words | 256000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP40,.6 | DIP40,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.61 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 40 | R-CDIP-T40 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | 0.05 mA | 256KX16 | 3-STATE | - | 16 | 0.0001 A | 4194304 bit | - | PARALLEL | COMMON | UVPROM | - | - | - | - | - | - | ||
| AM27C4096-120DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27512-25/BXAAnlielectronics Тип | AMD |
Description: UVPROM, 64KX8, 250ns, MOS, CDIP28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 250 ns | - | ADVANCED MICRO DEVICES INC | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.61 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | - | R-XDIP-T28 | Not Qualified | - | MILITARY | - | - | ASYNCHRONOUS | 0.15 mA | 64KX8 | 3-STATE | - | 8 | - | 524288 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | - | - | - | - | - | - | ||
| AM27512-25/BXA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM2130-10/BXCAnlielectronics Тип | AMD |
Multi-Port SRAM, 1KX8, 100ns, NMOS, CDIP48, SIDE BRAZED, CERAMIC, DIP-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 48 | 100 ns | - | ADVANCED MICRO DEVICES INC | - | 1024 words | 1000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP48,.6 | DIP48,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | INTERRUPT FLAG | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 48 | R-CDIP-T48 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.185 mA | 1KX8 | 3-STATE | 4.445 mm | 8 | - | 8192 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | MULTI-PORT SRAM | - | YES | - | - | 60.96 mm | 15.24 mm | ||
| AM2130-10/BXC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM91L22-45/DMCAnlielectronics Тип | AMD |
Standard SRAM, 256X4, 45ns, NMOS, CDIP22, CERAMIC, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | 45 ns | - | ADVANCED MICRO DEVICES INC | - | 256 words | 256 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP22,.4 | DIP22,.4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 22 | R-GDIP-T22 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 256X4 | 3-STATE | 5.08 mm | 4 | - | 1024 bit | MIL-STD-883 Class B (Modified) | PARALLEL | SEPARATE | STANDARD SRAM | - | YES | - | - | 27.4955 mm | 7.62 mm | ||
| AM91L22-45/DMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27C1024-250LEBAnlielectronics Тип | AMD |
UVPROM, 64KX16, 250ns, CMOS, CQCC44, WINDOWED, CERAMIC, LCC-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | 250 ns | - | ADVANCED MICRO DEVICES INC | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | WQCCN | WQCCN, LCC44,.65SQ | LCC44,.65SQ | SQUARE | CHIP CARRIER, WINDOW | Obsolete | LCC | No | 5 V | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.61 | QUAD | NO LEAD | - | 1 | 1.27 mm | unknown | - | 44 | S-CQCC-N44 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | 0.06 mA | 64KX16 | 3-STATE | 3.556 mm | 16 | 0.00024 A | 1048576 bit | - | PARALLEL | COMMON | UVPROM | - | - | - | - | 16.51 mm | 16.51 mm | ||
| AM27C1024-250LEB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27LS01DMBAnlielectronics Тип | AMD |
Description: Standard SRAM, 256X1, 55ns, TTL, CDIP16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | 55 ns | - | ADVANCED MICRO DEVICES INC | - | 256 words | 256 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T16 | Not Qualified | 5.25 V | MILITARY | 4.75 V | - | ASYNCHRONOUS | - | 256X1 | OPEN-COLLECTOR | - | 1 | - | 256 bit | MIL-STD-883 Class B (Modified) | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | ||
| AM27LS01DMB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM27LS01DCAnlielectronics Тип | AMD |
Standard SRAM, 256X1, 45ns, TTL, CDIP16, HERMETIC SEALED, CERAMIC, DIP-16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | 45 ns | - | ADVANCED MICRO DEVICES INC | - | 256 words | 256 | 75 °C | - | CERAMIC, GLASS-SEALED | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 16 | R-GDIP-T16 | Not Qualified | 5.25 V | COMMERCIAL EXTENDED | 4.75 V | 1 | ASYNCHRONOUS | - | 256X1 | OPEN-COLLECTOR | 5.08 mm | 1 | - | 256 bit | MIL-STD-883 Class C | PARALLEL | - | STANDARD SRAM | - | NO | - | - | 19.431 mm | 7.62 mm | ||
| AM27LS01DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC1701-PD8MAnlielectronics Тип | AMD |
Description: Configuration Memory, 1MX1, 45ns, Parallel, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | 45 ns | - | ADVANCED MICRO DEVICES INC | 1 | 1048576 words | 1000000 | 125 °C | -55 °C | PLASTIC/EPOXY | DIP | PLASTIC, DIP-8 | - | RECTANGULAR | IN-LINE | Active | - | No | 5 V | e0 | - | - | TIN LEAD | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | - | R-PDIP-T8 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | SYNCHRONOUS | - | 1MX1 | - | 4.5974 mm | 1 | - | 1048576 bit | - | PARALLEL | - | CONFIGURATION MEMORY | - | - | - | - | 9.3599 mm | 7.62 mm | ||
| XC1701-PD8M | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S200AVQG44IAnlielectronics Тип | AMD |
Configuration Memory, 1335840X1, Serial, CMOS, PQFP44, PLASTIC, VQFP-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | - | - | ADVANCED MICRO DEVICES INC | 3 | 1335840 words | 1335840 | 85 °C | -40 °C | PLASTIC/EPOXY | TQFP | PLASTIC, VQFP-44 | - | SQUARE | FLATPACK, THIN PROFILE | Active | - | Yes | 3.3 V | e3 | - | - | MATTE TIN | - | - | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | 30 | - | S-PQFP-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | SYNCHRONOUS | - | 1335840X1 | - | 1.2 mm | 1 | - | 1335840 bit | - | SERIAL | - | CONFIGURATION MEMORY | - | - | - | - | 10 mm | 10 mm | ||
| XC17S200AVQG44I | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC1701-SOG20MAnlielectronics Тип | AMD |
Configuration Memory, 1MX1, 45ns, Parallel, CMOS, PDSO20, PLASTIC, SOIC-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | 45 ns | - | ADVANCED MICRO DEVICES INC | 3 | 1048576 words | 1000000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOP | PLASTIC, SOIC-20 | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 5 V | e3 | - | - | MATTE TIN | - | - | DUAL | GULL WING | - | 1 | 1.27 mm | compliant | - | - | R-PDSO-G20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | SYNCHRONOUS | - | 1MX1 | - | 2.65 mm | 1 | - | 1048576 bit | - | PARALLEL | - | CONFIGURATION MEMORY | - | - | - | - | 12.8 mm | 7.5 mm | ||
| XC1701-SOG20M |
Индекс :
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