| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Supplier Device Package | Interface Type | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Mounting Styles | Supply Voltage-Max | Supply Voltage-Min | Operating Temperature | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Voltage - Supply | Memory Size | Clock Frequency | Access Time | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Memory Organization | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25LF32ESIGRAnlielectronics Тип | GigaDevice |
NOR Flash
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | SOP-8 | - | SPI | + 85 C | - | - | - 40 C | SMD/SMT | 2 V | 1.65 V | - | - | - | - | - | - | - | 32 Mbit | - | - | - | - | - | - | - | ||
| GD25LF32ESIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F2GQ5UEY2GRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
IC FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | GigaDevice Semiconductor (HK) Limited | - | - | - | - | - | Tape & Reel (TR) | - | - | Active | - | - | - | - | - | FLASH | - | - | - | - | ||
| GD5F2GQ5UEY2GR | |||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25B512MEFIRRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
IC FLASH 512MBIT SPI/QUAD 16SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP | - | - | Non-Volatile | GigaDevice Semiconductor (HK) Limited | - | - | - | - | -40°C ~ 85°C (TA) | Tape & Reel (TR) | - | GD25B | Active | - | 2.7V ~ 3.6V | 512Mbit | 133 MHz | - | FLASH | SPI - Quad I/O, QPI, DTR | - | 64M x 8 | - | ||
| GD25B512MEFIRR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD55B01GEYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
IC FLASH 1GBIT SPI/QUAD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) | - | - | Non-Volatile | GigaDevice Semiconductor (HK) Limited | - | - | - | - | -40°C ~ 85°C (TA) | Tape & Reel (TR) | - | GD55B | Active | - | 2.7V ~ 3.6V | 1Gbit | 133 MHz | 6 ns | FLASH | SPI - Quad I/O, QPI, DTR | 50μs, 1ms | 128M x 8 | - | ||
| GD55B01GEYIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LB256EYJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
IC FLASH 256MBIT SPI/QUAD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) | - | - | Non-Volatile | GigaDevice Semiconductor (HK) Limited | - | - | - | - | -40°C ~ 105°C (TA) | Tape & Reel (TR) | - | GD25LB | Active | - | 1.65V ~ 2V | 256Mbit | 166 MHz | 5 ns | FLASH | SPI - Quad I/O, QPI, DTR | 140µs, 2ms | 32M x 8 | - | ||
| GD25LB256EYJGR | |||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F4GQ4UCYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 2.7V~3.6V | 4Gb 512M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD5F4GQ4UCYIGR | |||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VQ16CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 2.3V~3.6V | 16Mb 2M x 8 | 104MHz | - | FLASH | SPI - Quad I/O | 50μs, 3ms | - | ROHS3 Compliant | ||
| GD25VQ16CSIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ32DWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI FLASH MUST BE TAPED Top right Pin 1 orientation
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~2V | 32Mb 4M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | 2.4ms | - | ROHS3 Compliant | ||
| GD25LQ32DWIGR | |||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q64CFIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tube | 2016 | - | Active | 3 (168 Hours) | 2.7V~3.6V | 64Mb 8M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | 50μs, 2.4ms | - | ROHS3 Compliant | ||
| GD25Q64CFIG | |||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q16CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 2.7V~3.6V | 16Mb 2M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | 50μs, 2.4ms | - | ROHS3 Compliant | ||
| GD25Q16CEIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4RCYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tray | 2016 | - | Active | 3 (168 Hours) | 1.7V~2V | 4Gb 512M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD5F4GQ4RCYIGY | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4UCYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tray | 2016 | - | Active | 3 (168 Hours) | 2.7V~3.6V | 4Gb 512M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD5F4GQ4UCYIGY | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 2Mb 256K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD20CTIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD10CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 1Mb 128K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD10CEIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD20CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 2Mb 256K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD20CEIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD40CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 4Mb 512K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD40CTIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 4Mb 512K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD40CEIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ80CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~2.1V | 8Mb 1M x 8 | 104MHz | - | FLASH | SPI - Quad I/O | 50μs, 2.4ms | - | ROHS3 Compliant | ||
| GD25LQ80CEIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD80CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | - | - | Active | 3 (168 Hours) | 1.65V~3.6V | 8Mb 1M x 8 | - | - | FLASH | SPI - Quad I/O | - | - | ROHS3 Compliant | ||
| GD25WD80CTIGR | |||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
Dual and Quad Serial Flash
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | - | - | Non-Volatile | - | - | - | - | - | -40°C~85°C TA | Tape & Reel (TR) | 2016 | - | Active | 3 (168 Hours) | 2.7V~3.6V | 32Mb 4M x 8 | 120MHz | - | FLASH | SPI - Quad I/O | 50μs, 2.4ms | - | ROHS3 Compliant | ||
| GD25Q32CSIGR |
Индекс :
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