| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Programming Voltage | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25Q64CFIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CFIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q80CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
8Mb SPI NOR Flash 2.7V-3.6V SOP8 (150mm)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 1.27mm | NOT SPECIFIED | R-PDSO-G8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | ||
| GD25Q80CSIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ80CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ80CTIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q20CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
2Mb SPI NOR Flash 2.7V-3.6V SOP8 (150mm)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q20CEIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LQ256DWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 256Mb 32M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ256DWIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q64CSJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CSJGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q127CYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CYIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ128DYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
128MBIT 1.8V WSON8 6X8MM IND
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ128DYIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q127CWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
128Mb SPI NOR Flash 2.7V-3.6V SOP8 (208mm)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CWIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ128DWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ128DWIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD05CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | - | - | 512Kb 64K x 8 | - | 100MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD05CTIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ16CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ16CTIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ16CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | - | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ16CSIG | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q16CTJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q16CTJGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 97μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD40CEIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ32DSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ32DSIG | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CTJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CTJGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ20CTIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CSIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q80CNIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-UDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | NOT SPECIFIED | R-PDSO-N8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 0.6mm | 4mm | 3mm | ROHS3 Compliant | ||
| GD25Q80CNIGR |
Индекс :
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