| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Programming Voltage | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25VE40CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE40CSIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE40CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE40CSIG | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD80CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 60μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD80CTIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ80CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ80CSIGR | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LD80CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 60μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD80CEIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CEIGR | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q80CWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 1.27mm | NOT SPECIFIED | R-PDSO-N8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 0.8mm | 6mm | 5mm | ROHS3 Compliant | ||
| GD25Q80CWIGR | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LQ40COIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ40COIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD20CUIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 97μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD20CUIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD10CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 1Mb 128K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 55μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD10CTIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q20CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q20CSIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD40CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 97μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD40CTIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q40CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q40CSIG | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ20CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ20CSIGR | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ20CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ20CSIG | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ16CWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ16CWIGR | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q127CBIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CBIGY | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F1GQ4UEYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F1GQ4UEYIGY | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F1GQ4UFYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F1GQ4UFYIGY | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25D05CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 512Kb 64K x 8 | - | 100MHz | FLASH | SPI - Dual I/O | - | - | 50μs, 4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25D05CEIGR |
Индекс :
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