| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Memory Types | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Voltage - Supply | Memory Size | Clock Frequency | Memory Format | Memory Interface | Write Cycle Time - Word, Page | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25WD20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 2Mb 256K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD20CTIGR | ||||||||||||||||||||||
 | Mfr. ТипGD25WD10CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 1Mb 128K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD10CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25WD20CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 2Mb 256K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD20CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25WD40CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 4Mb 512K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD40CTIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25WD40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 4Mb 512K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD40CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25LQ80CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~2.1V | 8Mb 1M x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25LQ80CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25WD80CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 8Mb 1M x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD80CTIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25Q32CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
Dual and Quad Serial Flash
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | 2.7V~3.6V | 32Mb 4M x 8 | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25Q32CSIGR | ||||||||||||||||||||||
 | Mfr. ТипGD25Q64CFIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | 2.7V~3.6V | 64Mb 8M x 8 | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25Q64CFIGR | ||||||||||||||||||||||
 | Mfr. ТипGD25S512MDYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
3.3V Uniform Sector Dual and Quad Serial Flash
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 2.7V~3.6V | 512Mb 64M x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25S512MDYIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25S512MDFIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 2.7V~3.6V | 512Mb 64M x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25S512MDFIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25D10CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tube | - | Active | 3 (168 Hours) | 2.7V~3.6V | 1Mb 128K x 8 | 100MHz | FLASH | SPI - Dual I/O | 50μs, 4ms | ROHS3 Compliant | ||
| GD25D10CTIG | ||||||||||||||||||||||
| | Mfr. ТипGD25LD05CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~2V | 512Kb 64K x 8 | 50MHz | FLASH | SPI - Dual I/O | 55μs, 6ms | ROHS3 Compliant | ||
| GD25LD05CTIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25LD20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~2V | 2Mb 256K x 8 | 50MHz | FLASH | SPI - Dual I/O | 97μs, 6ms | ROHS3 Compliant | ||
| GD25LD20CTIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25WD10CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~3.6V | 1Mb 128K x 8 | - | FLASH | SPI - Quad I/O | - | ROHS3 Compliant | ||
| GD25WD10CTIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25Q16CSJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 2.7V~3.6V | 16Mb 2M x 8 | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25Q16CSJGR | ||||||||||||||||||||||
| | Mfr. ТипGD25VQ16CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 2.3V~3.6V | 16Mb 2M x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | ROHS3 Compliant | ||
| GD25VQ16CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25D10CKIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
1MBIT3.3VSPIUSON8 1.5X1.5X0.45MM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 2.7V~3.6V | 1Mb 128K x 8 | 100MHz | FLASH | SPI - Dual I/O | 50μs, 4ms | ROHS3 Compliant | ||
| GD25D10CKIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25LQ10CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~2.1V | 1Mb 128K x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25LQ10CEIGR | ||||||||||||||||||||||
| | Mfr. ТипGD25LQ05CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 1.65V~2.1V | 512Kb 64K x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | ||
| GD25LQ05CEIGR |
Индекс :
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