| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Programming Voltage | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25VE20CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE20CSIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LD40COIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 97μs, 6ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD40COIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VQ20CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ20CEIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE32CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE32CSIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ20CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | - | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ20CTIG | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q64CZIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | 2016 | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CZIGY | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ32DSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ32DSIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25D10CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 1Mb 128K x 8 | - | 100MHz | FLASH | SPI - Dual I/O | - | - | 50μs, 4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25D10CTIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25D05CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 512Kb 64K x 8 | - | 100MHz | FLASH | SPI - Dual I/O | - | - | 50μs, 4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25D05CTIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VE32CVIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Discontinued | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE32CVIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Discontinued | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE40CEIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE16CSIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Discontinued | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE16CSIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q40CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q40CEIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q80CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.5mm | NOT SPECIFIED | R-PDSO-N8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 0.5mm | 3mm | 2mm | ROHS3 Compliant | ||
| GD25Q80CEIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q16CNIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-UDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q16CNIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CNIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-UDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CNIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ16CNIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-UDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ16CNIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD9FS1G8F2AMGIAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SLC NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 48-TFSOP (0.173, 4.40mm Width) | - | Non-Volatile | - | Tray | - | Active | 3 (168 Hours) | - | 1.7V~1.95V | - | - | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | - | FLASH | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD9FS1G8F2AMGI | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25D80CKIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
8MBIT3.3VSPIUSON8 1.5X1.5X0.45MM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 100MHz | FLASH | SPI - Dual I/O | - | - | 50μs, 4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25D80CKIGR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F4GQ4RBYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | - | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4RBYIGR |
Индекс :
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