| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Number of Functions | Supply Voltage | Terminal Pitch | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Supply Current-Max | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Boot Block | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25LX256EBIRYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | 256Mb 32M x 8 | - | 200MHz | - | FLASH | SPI - Octal I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LX256EBIRY | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD9FU1G8F2AMGIAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SLC NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 48-TFSOP (0.173, 4.40mm Width) | - | Non-Volatile | - | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | - | - | FLASH | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD9FU1G8F2AMGI | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F4GQ4RBYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4RBYIGR | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25WD05CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | 512Kb 64K x 8 | - | 100MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD05CEIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F1GQ4UFYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
1Gb SPI NAND Flash 1.65V-2.0V WSON8 (8*6mm)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F1GQ4UFYIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ256DYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | 256Mb 32M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ256DYIGR | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F2GQ4UF9IGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | Surface Mount | 8-VLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4UF9IGR | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VQ16CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ16CTIG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ16CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ16CSIG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q16CTJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q16CTJG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ16CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ16CTIG | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LQ16C8IGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ16C8IGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE20CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE20CTIG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE20CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE20CSIG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q256DBIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 256Mb 32M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q256DBIGY | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q32CVIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CVIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CTJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 3.3V | 1.27mm | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 4M x 8 | SYNCHRONOUS | 120MHz | 0.025mA | FLASH | SPI - Quad I/O | 32MX1 | 1 | 50μs, 2.4ms | 0.000005A | 33554432 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM/TOP | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| GD25Q32CTJG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ32DQIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ32DQIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LE32DLIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 21-XFBGA, WLSCP | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 1 (Unlimited) | - | 1.65V~2V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LE32DLIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CZIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CZIGY |
Индекс :
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