| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Boot Block | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25WD20CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 1.65V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD20CTIG | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LE16CLIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 21-XFBGA, WLSCP | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 1 (Unlimited) | - | - | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LE16CLIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ80CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ80CTIG | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD80CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 60μs, 6ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD80CSIG | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 97μs, 6ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD40CTIG | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LQ20COIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ20COIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q127CZIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CZIGY | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ128DSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ128DSIG | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q127CSJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CSJG | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F2GQ4UEYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4UEYIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F2GQ4UEYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4UEYIGY | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F2GQ4UFYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4UFYIGY | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ64CQIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 8542.32.00.51 | 1.65V~2V | DUAL | NOT SPECIFIED | 1 | 1.8V | 0.8mm | NOT SPECIFIED | S-PDSO-N8 | 2V | 1.65V | 64Mb 8M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 2.4ms | - | 67108864 bit | SERIAL | 1.8V | - | - | - | - | - | 0.5mm | 4mm | 4mm | ROHS3 Compliant | ||
| GD25LQ64CQIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LE64CLIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 21-XFBGA, WLSCP | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 1 (Unlimited) | - | - | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 133MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LE64CLIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ20CTIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VQ80CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | - | - | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ80CEIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE20CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | - | - | - | 2.1V~3.6V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE20CTIGR | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | 8 | - | - | 2.7V~3.6V | DUAL | - | 1 | 3.3V | 1.27mm | - | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 4M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 32MX1 | 1 | 50μs, 2.4ms | 0.000005A | 33554432 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM/TOP | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| GD25Q32CTIG | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | - | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CTIG | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CTIGR |
Индекс :
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