| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Number of Functions | Supply Voltage | Terminal Pitch | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Boot Block | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25Q16CSJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q16CSJG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE16CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE16CSIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 3.3V | 1.27mm | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 4M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 32MX1 | 1 | 50μs, 2.4ms | 0.000005A | 33554432 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM/TOP | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||
| GD25Q32CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CTIGR | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ40CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ40CSIG | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q64CYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CYIGR | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q127CFIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 12μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q127CFIG | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25LQ128DVIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ128DVIGR | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F2GQ4RF9IGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4RF9IGY | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE40CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ40CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LD80CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~2V | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 50MHz | FLASH | SPI - Dual I/O | - | - | 60μs, 6ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LD80CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ80CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ80CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD80CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD80CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ80CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ80CSIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ80CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.3V~3.6V | - | - | - | - | - | - | - | 8Mb 1M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 3ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ80CSIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD05CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | 512Kb 64K x 8 | - | 100MHz | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD05CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD10CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | 1Mb 128K x 8 | - | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD10CTIG | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q20CSIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q20CSIG |
Индекс :
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