| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Voltage - Supply | Terminal Position | Number of Functions | Supply Voltage | Terminal Pitch | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Supply Current-Max | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Boot Block | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25LQ20CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~2.1V | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ20CTIG | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q32CHIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-UFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CHIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CSJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 3.3V | 1.27mm | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 4M x 8 | SYNCHRONOUS | 120MHz | 0.025mA | FLASH | SPI - Quad I/O | 32MX1 | 1 | 50μs, 2.4ms | 0.000005A | 33554432 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM/TOP | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | ||
| GD25Q32CSJG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q32CBIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q32CBIGY | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25WD40CTIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 1.65V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | - | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25WD40CTIG | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD5F1GQ4RF9IGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-VLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F1GQ4RF9IGY | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F2GQ4RF9IGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-VLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 2Gb 256M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F2GQ4RF9IGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F1GQ4RF9IGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-VLGA Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 1Gb 128M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 700μs | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F1GQ4RF9IGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q64CQIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CQIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q64CPIGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-DIP (0.260, 6.60mm) | - | Non-Volatile | -40°C~85°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CPIG | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q64CBIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CBIGY | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q64CSJGAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | - | Non-Volatile | -40°C~105°C TA | Tube | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 64Mb 8M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q64CSJG | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25Q16CWIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25Q16CWIGR | ||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипGD25VE20CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE20CEIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25Q40CEJGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 4Mb 512K x 8 | - | 80MHz | - | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| GD25Q40CEJGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VE16CEIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.1V~3.6V | - | - | - | - | - | - | - | 16Mb 2M x 8 | - | 104MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VE16CEIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4RCYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
4Gb SPI NAND Flash 1.65V-2.0V WSON8 (8*6mm)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4RCYIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4UBYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4UBYIGY | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4UBYIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | 2.7V~3.6V | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4UBYIGR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD5F4GQ4RBYIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
SPI NAND FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | 1.7V~2V | - | - | - | - | - | - | - | 4Gb 512M x 8 | - | 120MHz | - | FLASH | SPI - Quad I/O | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD5F4GQ4RBYIGY |
Индекс :
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