| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Memory Types | Operating Temperature | Packaging | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Programming Voltage | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипGD25LE128DLIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 21-XFBGA, WLSCP | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | 1.65V~2V | - | - | - | - | - | - | - | - | - | 128Mb 16M x 8 | - | 120MHz | FLASH | SPI - Quad I/O | - | - | 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LE128DLIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25S512MDBIGYAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 24-TBGA | - | Non-Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | - | 512Mb 64M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25S512MDBIGY | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ16LIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | Surface Mount | 8-XFBGA, WLCSP | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 8542.32.00.51 | 1.65V~2.1V | BOTTOM | NOT SPECIFIED | 1 | 1.8V | 0.5mm | NOT SPECIFIED | R-PBGA-B8 | 2V | 1.65V | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 16MX1 | 1 | 50μs, 2.4ms | 16777216 bit | SERIAL | 1.8V | 0.5mm | 2.525mm | 1.511mm | ROHS3 Compliant | ||
| GD25LQ16LIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25LQ20CUIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | Surface Mount | 8-UFDFN Exposed Pad | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | 1.65V~2.1V | - | - | - | - | - | - | - | - | - | 2Mb 256K x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25LQ20CUIGR | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGD25VQ32CTIGRAnlielectronics Тип | GigaDevice Semiconductor (HK) Limited |
NOR FLASH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Active | 3 (168 Hours) | - | - | 2.3V~3.6V | - | - | - | - | - | - | - | - | - | 32Mb 4M x 8 | - | 104MHz | FLASH | SPI - Quad I/O | - | - | 50μs, 2.4ms | - | - | - | - | - | - | ROHS3 Compliant | ||
| GD25VQ32CTIGR |
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