Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page3

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Data Polling	Toggle Bit	Command User Interface	Page Size	Ready/Busy	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Data Polling	Toggle Bit	Command User Interface	Page Size	Ready/Busy	Length	Width
	Mfr. Тип HM6148HP-55 Anlielectronics Тип	Hitachi Ltd	Standard SRAM, 1KX4, 55ns, CMOS, PDIP18 Сборник данных Сравнение	Min.:1 Mult.:1	NO	18	55 ns	HITACHI LTD	-	-	1024 words	1000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP18,.3	DIP18,.3	RECTANGULAR	IN-LINE	Obsolete	-	-	-	-	No	5 V	e0	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	-	-	DUAL	THROUGH-HOLE	-	-	2.54 mm	unknown	-	R-PDIP-T18	Not Qualified	-	-	COMMERCIAL	-	ASYNCHRONOUS	0.1 mA	1KX4	3-STATE	-	4	-	4096 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-
HM6148HP-55 Hitachi Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM62W85128LTT7 Anlielectronics Тип	Hitachi Ltd	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HM62W85128LTT7 Hitachi Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58C66T25 Anlielectronics Тип	Hitachi	EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	250 ns	HITACHI LTD	Hitachi Ltd	HN58C66T-25	8192 words	8000	70 °C	-	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP	-	5.88	Non-Compliant	No	5 V	e0	EAR99	Tin/Lead (Sn/Pb)	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE	8542.32.00.51	EEPROMs	CMOS	DUAL	GULL WING	-	1	0.5 mm	unknown	32	R-PDSO-G32	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V	ASYNCHRONOUS	0.025 mA	8KX8	-	1.2 mm	8	0.001 A	65536 bit	PARALLEL	-	EEPROM	5 V	-	-	10	YES	NO	NO	32 words	YES	12.4 mm	8 mm
HN58C66T25 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58C65P-25 Anlielectronics Тип	Hitachi	EEPROM, 8KX8, 250ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	250 ns	HITACHI LTD	Hitachi Ltd	HN58C65P-25	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	NOT SPECIFIED	5.26	-	No	5 V	e0	EAR99	Tin/Lead (Sn/Pb)	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE	8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown	28	R-PDIP-T28	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V	ASYNCHRONOUS	0.025 mA	8KX8	-	5.7 mm	8	0.001 A	65536 bit	PARALLEL	-	EEPROM	5 V	-	-	10	YES	NO	NO	32 words	YES	35.6 mm	15.24 mm
HN58C65P-25 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58V256ATI-12 Anlielectronics Тип	Hitachi	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	120 ns	HITACHI LTD	Hitachi Ltd	HN58V256ATI-12	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP28,.53,22	TSSOP28,.53,22	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred	TSOP	-	8.4	Non-Compliant	-	3 V	-	EAR99	-	-	8542.32.00.51	EEPROMs	CMOS	DUAL	GULL WING	-	1	0.55 mm	unknown	28	R-PDSO-G28	Not Qualified	5.5 V	3/5 V	INDUSTRIAL	2.7 V	ASYNCHRONOUS	0.03 mA	32KX8	-	1.2 mm	8	0.00002 A	262144 bit	PARALLEL	-	EEPROM	3 V	100000 Write/Erase Cycles	10 ms	-	YES	YES	NO	64 words	-	11.8 mm	8 mm
HN58V256ATI-12 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58C66P-25 Anlielectronics Тип	Hitachi	EEPROM, 8KX8, 250ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	250 ns	HITACHI LTD	Hitachi Ltd	HN58C66P-25	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	-	5.27	-	No	5 V	e0	EAR99	Tin/Lead (Sn/Pb)	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE	8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	28	R-PDIP-T28	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V	ASYNCHRONOUS	0.025 mA	8KX8	-	5.7 mm	8	0.001 A	65536 bit	PARALLEL	-	EEPROM	5 V	-	-	10	YES	NO	NO	32 words	YES	35.6 mm	15.24 mm
HN58C66P-25 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58C256FPI-20 Anlielectronics Тип	Hitachi	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HN58C256FPI-20 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HN58C257T-20 Anlielectronics Тип	Hitachi	EEPROM, 32KX8, 200ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	200 ns	HITACHI LTD	Hitachi Ltd	HN58C257T-20	32768 words	32000	70 °C	-	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred	TSOP	-	7.98	-	No	5 V	e0	EAR99	Tin/Lead (Sn/Pb)	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS	8542.32.00.51	EEPROMs	CMOS	DUAL	GULL WING	-	1	0.5 mm	unknown	32	R-PDSO-G32	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V	ASYNCHRONOUS	0.03 mA	32KX8	-	1.2 mm	8	0.0002 A	262144 bit	PARALLEL	-	EEPROM	5 V	-	-	10	YES	NO	NO	64 words	YES	12.4 mm	8 mm
HN58C257T-20 Hitachi RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: HM6148HP-55,HM62W85128LTT7,HN58C66T25,HN58C65P-25,HN58V256ATI-12.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 48 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)