Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page2

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Weight	Number of Terminals	Access Time-Max	Analog	Base Product Number	Capacitors series	Case - inch	Case - mm	Execution	Gross weight	Ihs Manufacturer	Kind of capacitor	Manufacturer	Manufacturer Part Number	Melting temperature	Memory Types	Mfr	Mounting	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Risk Rank	RoHS	Rohs Code	Sample Rate	Soldering temperature	Supply Voltage-Nom	Supply Voltage-Nom (Vsup)	Transport packaging size/quantity	Type of capacitor	Operating temperature	Operating Temperature	Packaging	Series	Tolerance	JESD-609 Code	ECCN Code	Type	Terminal Finish	Composition	Applications	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Supply	Terminal Position	Terminal Form	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Dielectric	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Configuration	Memory Size	Number of Ports	Operating Mode	Number of Bits	Supply Current-Max	Input Type	Access Time	Memory Format	Memory Interface	Architecture	Number of Inputs	Organization	Output Characteristics	Converter Type	Reference Type	Memory Width	Data Interface	Write Cycle Time - Word, Page	Voltage - Supply, Analog	Standby Current-Max	Memory Density	Voltage - Supply, Digital	Number of Analog In Channels	Sampling Rate (Per Second)	Output Bit Code	Linearity Error-Max (EL)	Sample and Hold / Track and Hold	Screening Level	Number of A/D Converters	Parallel/Serial	I/O Type	Ratio - S/H:ADC	Memory IC Type	Analog Input Voltage-Max	Output Format	Negative Supply Voltage-Nom	Standby Voltage-Min	Analog Input Voltage-Min	Conversion Time-Max	Output Enable	Features	Operating voltage	Memory Organization	Diameter

Изображение	Тип	Марка	Объяснение	Количество	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Weight	Number of Terminals	Access Time-Max	Analog	Base Product Number	Capacitors series	Case - inch	Case - mm	Execution	Gross weight	Ihs Manufacturer	Kind of capacitor	Manufacturer	Manufacturer Part Number	Melting temperature	Memory Types	Mfr	Mounting	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Risk Rank	RoHS	Rohs Code	Sample Rate	Soldering temperature	Supply Voltage-Nom	Supply Voltage-Nom (Vsup)	Transport packaging size/quantity	Type of capacitor	Operating temperature	Operating Temperature	Packaging	Series	Tolerance	JESD-609 Code	ECCN Code	Type	Terminal Finish	Composition	Applications	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Supply	Terminal Position	Terminal Form	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Dielectric	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Configuration	Memory Size	Number of Ports	Operating Mode	Number of Bits	Supply Current-Max	Input Type	Access Time	Memory Format	Memory Interface	Architecture	Number of Inputs	Organization	Output Characteristics	Converter Type	Reference Type	Memory Width	Data Interface	Write Cycle Time - Word, Page	Voltage - Supply, Analog	Standby Current-Max	Memory Density	Voltage - Supply, Digital	Number of Analog In Channels	Sampling Rate (Per Second)	Output Bit Code	Linearity Error-Max (EL)	Sample and Hold / Track and Hold	Screening Level	Number of A/D Converters	Parallel/Serial	I/O Type	Ratio - S/H:ADC	Memory IC Type	Analog Input Voltage-Max	Output Format	Negative Supply Voltage-Nom	Standby Voltage-Min	Analog Input Voltage-Min	Conversion Time-Max	Output Enable	Features	Operating voltage	Memory Organization	Diameter
	Mfr. Тип MWS5101AEL2 Anlielectronics Тип	Harris Corporation	256X4-BIT STANDARD SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	22-DIP (0.400", 10.16mm)	-	22-PDIP	-	-	-	-	MWS5101	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	0°C ~ 70°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1Kbit	-	-	-	-	-	250 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	300ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	256 x 4	-
MWS5101AEL2 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWS5114D2 Anlielectronics Тип	Harris Corporation	1024X4-BIT STANDARD SRAM, Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-CDIP (0.300", 7.62mm)	-	18-SBDIP	-	-	-	-	MWS5114	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	0°C ~ 70°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 6.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Kbit	-	-	-	-	-	250 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	250ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1K x 4	-
MWS5114D2 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWS5101AEL3 Anlielectronics Тип	Harris Corporation	256X4-BIT STANDARD SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	22-DIP (0.400", 10.16mm)	-	22-PDIP	-	-	-	-	MWS5101	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	0°C ~ 70°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1Kbit	-	-	-	-	-	350 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	400ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	256 x 4	-
MWS5101AEL3 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM1-65642C-9 Anlielectronics Тип	Harris Corporation	8K X 8 ASYNCHRONOUS CMOS SRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HM1-65642C-9 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM4-6516-9 Anlielectronics Тип	Harris Corporation	2K X 8 CMOS RAM Сборник данных Сравнение	Min.:1 Mult.:1	Surface Mount	32-CLCC	-	32-CLCC (13.97x11.43)	-	-	-	-	HM4-6516	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	16Kbit	-	-	-	-	-	200 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	280ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2K x 8	-
HM4-6516-9 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM3-6504S-9 Anlielectronics Тип	Harris Corporation	4096 X 1 CMOS RAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-DIP (0.300", 7.62mm)	NO	18-PDIP	-	18	120 ns	-	HM3-6504	-	-	-	-	-	ROCHESTER ELECTRONICS LLC	-	Rochester Electronics LLC	HM3-6504S-9	-	Volatile	Harris Corporation	-	4096 words	4000	85 °C	-40 °C	Bulk	PLASTIC/EPOXY	-	-	-	RECTANGULAR	IN-LINE	Active	-	Active	5.77	-	-	-	-	-	5 V	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	ADDRESS LATCH	-	-	-	4.5V ~ 5.5V	DUAL	THROUGH-HOLE	1	-	unknown	-	R-PDIP-T18	COMMERCIAL	-	5.5 V	-	INDUSTRIAL	4.5 V	-	4Kbit	-	ASYNCHRONOUS	-	-	-	120 ns	SRAM	Parallel	-	-	4KX1	-	-	-	1	-	170ns	-	-	4096 bit	-	-	-	-	-	-	-	-	PARALLEL	-	-	STANDARD SRAM	-	-	-	-	-	-	-	-	-	4K x 1	-
HM3-6504S-9 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWS5101EL3 Anlielectronics Тип	Harris Semiconductor	Standard SRAM, 256X4, 350ns, CMOS, PDIP22, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	NO	-	0.4 kg	22	350 ns	POS40	-	KGM	1206	3216	wire	415.00	HARRIS SEMICONDUCTOR	MLCC	-	-	183...240 °C	-	-	SMD	256 words	256	70 °C	-	-	PLASTIC/EPOXY	DIP	DIP-22	DIP22,.4	RECTANGULAR	IN-LINE	Obsolete	-	-	-	-	No	-	285...330 °C	-	5 V	292540/30	ceramic	-55...125°C	-	coil	-	±10%	e0	EAR99	Soft lead-tin solder Sn/Pb	TIN LEAD	lead - 40%; tin - 60%	-	-	8542.32.00.41	68pF	-	-	DUAL	THROUGH-HOLE	1	2.54 mm	unknown	-	R-PDIP-T22	Not Qualified	C0G (NP0)	6.5 V	-	COMMERCIAL	4 V	-	-	1	ASYNCHRONOUS	-	0.008 mA	-	-	-	-	-	-	256X4	3-STATE	-	-	4	-	-	-	0.00005 A	1024 bit	-	-	-	-	-	-	-	-	PARALLEL	SEPARATE	-	STANDARD SRAM	-	-	-	2 V	-	-	YES	-	2kV	-	1.2 mm
MWS5101EL3 Harris Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWS5101EL2 Anlielectronics Тип	Harris Semiconductor	Standard SRAM, 256X4, 250ns, CMOS, PDIP22, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	NO	-	0.5 kg	22	250 ns	POS40	-	-	-	-	tube	526.67	HARRIS SEMICONDUCTOR	-	-	-	183...240 °C	-	-	-	256 words	256	70 °C	-	-	PLASTIC/EPOXY	DIP	DIP, DIP22,.4	DIP22,.4	RECTANGULAR	IN-LINE	Obsolete	-	-	-	-	No	-	285...330 °C	-	5 V	422815/30	-	-	-	coil	-	-	e0	EAR99	RUICHI Tin-Lead Solder Sn/Pb with flux, soft	TIN LEAD	-	-	-	8542.32.00.41	-	-	-	DUAL	THROUGH-HOLE	1	2.54 mm	unknown	-	R-PDIP-T22	Not Qualified	-	6.5 V	-	COMMERCIAL	4 V	-	-	1	ASYNCHRONOUS	-	0.008 mA	-	-	-	-	-	-	256X4	3-STATE	-	-	4	-	-	-	0.00001 A	1024 bit	-	-	-	-	-	-	-	-	PARALLEL	SEPARATE	-	STANDARD SRAM	-	-	-	2 V	-	-	YES	-	-	-	0.6 mm
MWS5101EL2 Harris Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM4-65262B/883 Anlielectronics Тип	Harris Semiconductor	Description: Standard SRAM, 16KX1, 70ns, CMOS, CQCC20 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	-	20	70 ns	-	-	-	-	-	-	-	HARRIS SEMICONDUCTOR	-	-	-	-	-	-	-	16384 words	16000	125 °C	-55 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	QCCN, LCC20,.3X.43	LCC20,.3X.43	SQUARE	CHIP CARRIER	Obsolete	-	-	-	-	No	-	-	-	5 V	-	-	-	-	-	-	-	e0	3A001.A.2.C	-	TIN LEAD	-	-	-	8542.32.00.41	-	-	-	QUAD	NO LEAD	1	1.27 mm	unknown	-	S-CQCC-N20	Not Qualified	-	5.5 V	-	MILITARY	4.5 V	-	-	1	ASYNCHRONOUS	-	0.07 mA	-	-	-	-	-	-	16KX1	3-STATE	-	-	1	-	-	-	0.00002 A	16384 bit	-	-	-	-	-	-	38535Q/M;38534H;883B	-	PARALLEL	SEPARATE	-	STANDARD SRAM	-	-	-	2 V	-	-	NO	-	-	-	-
HM4-65262B/883 Harris Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HI3-7152J-5 Anlielectronics Тип	HARRIS	10-BIT HIGH SPEED ADC Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	28-CDIP (0.600, 15.24mm)	NO	28-CERDIP	-	28	-	-	-	-	-	-	-	-	ROCHESTER ELECTRONICS LLC	-	Rochester Electronics LLC	HI3-7152J-5	-	-	Harris Corporation	-	-	-	75 °C	-	Bulk	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Contact Manufacturer	DIP	Active	5.7	-	-	0.2 MHz	-	5 V	-	-	-	-	0°C ~ 75°C	-	-	-	-	-	-	-	-	Cable compression lugs and connectors	-	8542.39.00.01	-	Analog to Digital Converters	-	DUAL	THROUGH-HOLE	1	2.54 mm	unknown	28	R-PDIP-T28	Not Qualified	-	-	+-5 V	COMMERCIAL EXTENDED	-	S/H-ADC	-	-	-	10	-	Single Ended	-	-	-	Two-Step	1	-	-	ADC, FLASH METHOD	External	-	Parallel	-	±4.5V ~ 5.5V	-	-	±4.5V ~ 5.5V	1	200k	2S COMPLEMENT BINARY	0.0977%	TRACK	-	1	-	-	1:1	-	2.6 V	PARALLEL, 8 BITS, PARALLEL, WORD	-5 V	-	-2.6 V	5 µs	-	-	-	-	-
HI3-7152J-5 HARRIS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CS82C37AS2455 Anlielectronics Тип	HARRIS	CMOS HIGH PERFORMANCE PROGRAMMAB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CS82C37AS2455 HARRIS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CS82C37AB6009 Anlielectronics Тип	HARRIS	CMOS HIGH PERFORMANCE PROGRAMMAB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TANSITOR ELECTRONICS COMPANY	-	-	-	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	NO	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CS82C37AB6009 HARRIS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM1-6518-9 Anlielectronics Тип	Harris Corporation	1024 X 1 CMOS RAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-DIP (0.300", 7.62mm)	-	18-CERDIP	-	-	-	-	HM1-6518	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1Kbit	-	-	-	-	-	250 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	350ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1K x 1	-
HM1-6518-9 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CDP1824CD Anlielectronics Тип	Harris Corporation	32-WORD X 8-BIT SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-CDIP	-	18-CDIP	-	-	-	-	CDP18	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4V ~ 6.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	256bit	-	-	-	-	-	710 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	32 x 8	-
CDP1824CD Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 8102402VA Anlielectronics Тип	Harris Corporation	1024 X 4 CMOS RAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-CDIP (0.300", 7.62mm)	-	18-CERDIP	-	-	-	-	810240	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-55°C ~ 125°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Kbit	-	-	-	-	-	120 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	170ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1K x 4	-
8102402VA Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HM165162B-9 Anlielectronics Тип	Harris Corporation	2K X 8 ASYNCHRONOUS CMOS SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	24-CDIP (0.600", 15.24mm)	-	24-CERDIP	-	-	-	-	HM1-65162	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	16Kbit	-	-	-	-	-	70 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	70ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2K x 8	-
HM165162B-9 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IM6654MJG/883B Anlielectronics Тип	Harris Corporation	4096-BIT CMOS UV EPROM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	24-CDIP (0.600", 15.24mm)	-	24-CERDIP	-	-	-	-	IM6654	-	-	-	-	-	-	-	-	-	-	Non-Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-55°C ~ 125°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Kbit	-	-	-	-	-	600 ns	EPROM	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512 x 8	-
IM6654MJG/883B Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWS5101DL3X Anlielectronics Тип	Harris Corporation	256X4-BIT STANDARD SRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	MWS5101	-	-	-	-	-	-	-	-	-	-	-	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MWS5101DL3X Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CDP1824D Anlielectronics Тип	Harris Corporation	32-WORD X 8-BIT SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-CDIP (0.300", 7.62mm)	-	18-SBDIP	-	-	-	-	CDP18	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4V ~ 10.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	256bit	-	-	-	-	-	320 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	32 x 8	-
CDP1824D Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CMM5104D3 Anlielectronics Тип	Harris Corporation	4K X 1-BIT SRAM Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	18-CDIP (0.300", 7.62mm)	-	18-CERDIP	-	-	-	-	CMM5104	-	-	-	-	-	-	-	-	-	-	Volatile	Harris Corporation	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-55°C ~ 125°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5V ~ 5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Kbit	-	-	-	-	-	250 ns	SRAM	Parallel	-	-	-	-	-	-	-	-	250ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4K x 1	-
CMM5104D3 Harris Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: MWS5101AEL2,MWS5114D2,MWS5101AEL3,HM1-65642C-9,HM4-6516-9.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 51 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)