| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Surface Mount | Number of pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Supply Voltage-Nom (Vsup) | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Rated voltage | Output Enable | Profile | Saturation Current | Length | Width | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIDT7M912S35CBAnlielectronics Тип | Integrated Device Technology Inc |
Description: SRAM Module, 64KX9, 35ns, CMOS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 40 | 35 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 65536 words | 64000 | 125 °C | -55 °C | UNSPECIFIED | DIP | - | DIP40,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | - | No | - | - | 5 V | - | - | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | - | R-XDMA-T40 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | 1.08 mA | 64KX9 | 3-STATE | - | 9 | 0.18 A | 589824 bit | MIL-STD-883 Class B (Modified) | PARALLEL | SEPARATE | SRAM MODULE | 4.5 V | - | - | - | - | - | - | - | - | ||
| IDT7M912S35CB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7007S55JGIAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 32KX8, 55ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 68 | 55 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 1 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68 | PGA68,11X11 | SQUARE | CHIP CARRIER | Obsolete | LCC | Yes | - | - | 5 V | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | - | 8542.32.00.41 | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | - | 30 | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.31 mA | 32KX8 | 3-STATE | 4.572 mm | 8 | 0.03 A | 262144 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | - | - | - | 24.2062 mm | 24.2062 mm | - | - | ||
| IDT7007S55JGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7198S15PAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 15ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 24 | 15 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.135 mA | 16KX4 | 3-STATE | 4.191 mm | 4 | 0.02 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | YES | - | - | 31.6865 mm | 7.62 mm | - | - | ||
| IDT7198S15P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT768-153.6-6Anlielectronics Тип | Integrated Device Technology Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IDT768-153.6-6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7025S20PFBAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 8KX16, 20ns, CMOS, PQFP100, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 100 | 20 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | LFQFP | LFQFP, | - | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | - | - | 5 V | - | - | e0 | No | 3A001.A.2.C | Tin/Lead (Sn85Pb15) | CONFIGURABLE AS 8K X 16 | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | - | 20 | 100 | S-PQFP-G100 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 8KX16 | - | 1.6 mm | 16 | - | 131072 bit | MIL-PRF-38535 | PARALLEL | - | DUAL-PORT SRAM | - | - | - | - | - | 14 mm | 14 mm | - | - | ||
| IDT7025S20PFB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V7278S15PFAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 32KX16, 15ns, CMOS, PQFP100, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | YES | 30 | 100 | 15 ns | - | socket | 2x15 | 2.54mm | THT | 1.38 g | INTEGRATED DEVICE TECHNOLOGY INC | female | - | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | LFQFP | TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | 2.54mm | straight | 3.3 V | pin strips | -40...163°C | e0 | - | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | - | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 1.5A | 20 | 100 | S-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | 2 | ASYNCHRONOUS | 0.28 mA | 32KX16 | 3-STATE | 1.6 mm | 16 | 0.006 A | 524288 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3.14 V | 60V | - | beryllium copper | 3 | 14 mm | 14 mm | 0.254µm | UL94V-0 | ||
| IDT70V7278S15PF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7130SA70L52Anlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 1KX8, 70ns, CMOS, CQCC52, LCC-52
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 52 | 70 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 1024 words | 1000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-52 | LCC52,.75SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | - | - | 5 V | - | - | e0 | No | EAR99 | TIN LEAD | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | 1.27 mm | not_compliant | - | - | 52 | S-CQCC-N52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.18 mA | 1KX8 | 3-STATE | 2.2098 mm | 8 | 0.015 A | 8192 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | YES | - | - | 19.05 mm | 19.05 mm | - | - | ||
| IDT7130SA70L52 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT6168SA100DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 4KX4, 100ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 20 | 100 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 4096 words | 4000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-20 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 20 | R-GDIP-T20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | - | 4KX4 | 3-STATE | 5.08 mm | 4 | - | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | NO | - | - | 25.3365 mm | 7.62 mm | - | - | ||
| IDT6168SA100DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7130SA20PFGAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 1KX8, 20ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 64 | 20 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | Yes | - | - | 5 V | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | - | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.25 mA | 1KX8 | 3-STATE | 1.6 mm | 8 | 0.015 A | 8192 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | - | - | - | 14 mm | 14 mm | - | - | ||
| IDT7130SA20PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7M912S100CBAnlielectronics Тип | Integrated Device Technology Inc |
SRAM Module, 64KX9, 100ns, CMOS, CDIP40
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 40 | 100 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC | DIP | - | DIP40,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | 5 V | - | - | e0 | No | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | not_compliant | - | - | - | R-XDIP-T40 | Not Qualified | - | MILITARY | - | - | ASYNCHRONOUS | 1.08 mA | 64KX9 | 3-STATE | - | 9 | 0.18 A | 589824 bit | MIL-STD-883 Class B (Modified) | PARALLEL | SEPARATE | SRAM MODULE | 4.5 V | - | - | - | - | - | - | - | - | ||
| IDT7M912S100CB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71982S25CAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 25ns, CMOS, CDIP28, 0.400 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 28 | 25 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | 0.400 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-28 | DIP28,.4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.135 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.015 A | 65536 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | - | YES | - | - | 35.56 mm | 10.16 mm | - | - | ||
| IDT71982S25C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7030LA25PAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 1KX8, 25ns, CMOS, PDIP48, 0.600 INCH, PLASTIC, DIP-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 48 | 25 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP48,.6 | DIP48,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | No | EAR99 | TIN LEAD | BATTERY BACK-UP | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 48 | R-PDIP-T48 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.18 mA | 1KX8 | 3-STATE | 5.08 mm | 8 | 0.0015 A | 8192 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | - | - | - | - | 61.849 mm | 15.24 mm | - | - | ||
| IDT7030LA25P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT6116SA55L32Anlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 2KX8, 55ns, CMOS, CQCC32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 32 | 55 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 2048 words | 2000 | 70 °C | - | CERAMIC | QCCN | - | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | - | No | - | - | 5 V | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | QUAD | NO LEAD | - | - | 1.27 mm | unknown | - | - | - | R-XQCC-N32 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.1 mA | 2KX8 | 3-STATE | - | 8 | 0.002 A | 16384 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | - | - | - | - | - | - | - | ||
| IDT6116SA55L32 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V9289L6PRFGAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 64KX16, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 128 | 15 ns | 100 MHz | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | LFQFP | 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128 | QFP128,.63X.87,20 | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | Yes | - | - | 3.3 V | - | - | e3 | Yes | 3A991.B.2.B | Matte Tin (Sn) - annealed | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.5 mm | unknown | - | 30 | 128 | R-PQFP-G128 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 2 | SYNCHRONOUS | 0.28 mA | 64KX16 | 3-STATE | 1.6 mm | 16 | 0.002 A | 1048576 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | - | - | - | - | 20 mm | 14 mm | - | - | ||
| IDT70V9289L6PRFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT6168SA20DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 4KX4, 20ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 20 | 20 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 4096 words | 4000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERAMIC, DIP-20 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 20 | R-GDIP-T20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.12 mA | 4KX4 | 3-STATE | 5.08 mm | 4 | - | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | NO | - | - | 25.3365 mm | 7.62 mm | - | - | ||
| IDT6168SA20DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7164S30L28Anlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 8KX8, 29ns, CMOS, CQCC28, LCC-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 28 | 29 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 8192 words | 8000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-28 | LCC28,.45SQ | SQUARE | CHIP CARRIER | Obsolete | QLCC | No | - | - | 5 V | - | - | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | 1.27 mm | not_compliant | - | - | 28 | S-CQCC-N28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 8KX8 | 3-STATE | 2.54 mm | 8 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | YES | - | - | 11.43 mm | 11.43 mm | - | - | ||
| IDT7164S30L28 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V3319S133PRFGIAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 256KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 128 | 4.2 ns | 133 MHz | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | LFQFP, QFP128,.63X.87 | QFP128,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Transferred | QFP | Yes | - | - | 3.3 V | - | - | e3 | Yes | 3A991.B.2.A | Matte Tin (Sn) - annealed | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.5 mm | compliant | - | 30 | 128 | R-PQFP-G128 | Not Qualified | 3.45 V | INDUSTRIAL | 3.15 V | 2 | SYNCHRONOUS | 0.4 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | - | - | - | 3 | 20 mm | 14 mm | - | - | ||
| IDT70V3319S133PRFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7005S25JBAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 8KX8, 25ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, PLASTIC, LCC-68
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 68 | 25 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 1 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC68,1.0SQ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | Transferred | LCC | No | - | - | 5 V | - | - | e0 | No | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | - | 20 | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.34 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.03 A | 65536 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | - | - | - | 24.2062 mm | 24.2062 mm | - | - | ||
| IDT7005S25JB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7198L55CBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 55ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, DIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 24 | 55 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, SIDE BRAZED, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | No | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 24 | R-CDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.11 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.0006 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | YES | - | - | 30.607 mm | 7.62 mm | - | - | ||
| IDT7198L55CB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7188S45DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 22 | 45 ns | - | - | - | - | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP22,.3 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | - | 5 V | - | - | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | 22 | R-GDIP-T22 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.14 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.02 A | 65536 bit | MIL-STD-883 Class B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | NO | - | - | 27.051 mm | 7.62 mm | - | - | ||
| IDT7188S45DB |
Индекс :
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