Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page16

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Length	Width
	Mfr. Тип IDT83905AGLF Anlielectronics Тип	Integrated Device Technology Inc	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IDT83905AGLF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7025L55PFB Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 8KX16, 55ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	8192 words	8000	125 °C	-55 °C	PLASTIC/EPOXY	LFQFP	LFQFP,	-	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	5 V	e0	No	3A001.A.2.C	Tin/Lead (Sn85Pb15)	CONFIGURABLE AS 8K X 16	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	-	8KX16	-	1.6 mm	16	-	131072 bit	MIL-PRF-38535	PARALLEL	-	DUAL-PORT SRAM	-	-	14 mm	14 mm
IDT7025L55PFB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71321SA55L52 Anlielectronics Тип	Integrated Device Technology Inc	Description: Multi-Port SRAM, 2KX8, 55ns, CMOS, CQCC52, LCC-52 Сборник данных Сравнение	Min.:1 Mult.:1	YES	52	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	QCCN, LCC52,.75SQ	LCC52,.75SQ	SQUARE	CHIP CARRIER	Obsolete	LCC	No	5 V	e0	No	EAR99	TIN LEAD	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	52	S-CQCC-N52	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.18 mA	2KX8	3-STATE	2.2098 mm	8	0.015 A	16384 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	YES	19.05 mm	19.05 mm
IDT71321SA55L52 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V9279S15PRF Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 32KX16, 30ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Сборник данных Сравнение	Min.:1 Mult.:1	YES	128	30 ns	40 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	32768 words	32000	70 °C	-	PLASTIC/EPOXY	LFQFP	14 X 20 MM, 1.40 MM HEIGHT, TQFP-128	QFP128,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	EAR99	Tin/Lead (Sn85Pb15)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	225	1	0.5 mm	not_compliant	30	128	R-PQFP-G128	Not Qualified	3.6 V	COMMERCIAL	3 V	2	SYNCHRONOUS	0.22 mA	32KX16	3-STATE	1.6 mm	16	0.005 A	524288 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	20 mm	14 mm
IDT70V9279S15PRF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7198L85CB Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 16KX4, 85ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, DIP-24 Сборник данных Сравнение	Min.:1 Mult.:1	NO	24	85 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	16384 words	16000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	0.300 INCH, SIDE BRAZED, DIP-24	DIP24,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	24	R-CDIP-T24	Not Qualified	5.5 V	MILITARY	4.5 V	1	ASYNCHRONOUS	0.105 mA	16KX4	3-STATE	5.08 mm	4	0.0006 A	65536 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	30.607 mm	7.62 mm
IDT7198L85CB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71322S70C Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX8, 70ns, CMOS, CDIP48, 0.600 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	70 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	DIP	0.600 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-48	DIP48,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	EAR99	TIN LEAD	BATTERY BACKUP OPERATION	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	48	R-CDIP-T48	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	-	2KX8	3-STATE	4.826 mm	8	0.015 A	16384 bit	-	PARALLEL	-	MULTI-PORT SRAM	4.5 V	-	60.96 mm	15.24 mm
IDT71322S70C Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7165S45TCB Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, THIN, SIDE BRAZED, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	0.300 INCH, THIN, SIDE BRAZED, DIP-28	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	28	R-CDIP-T28	Not Qualified	5.5 V	MILITARY	4.5 V	1	ASYNCHRONOUS	0.16 mA	8KX8	3-STATE	5.08 mm	8	0.02 A	65536 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	STANDARD SRAM	4.5 V	YES	35.56 mm	7.62 mm
IDT7165S45TCB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7142LA35XC Anlielectronics Тип	Integrated Device Technology Inc	Description: Multi-Port SRAM, 2KX8, 35ns, CMOS, CDIP48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	35 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	CERAMIC	SDIP	-	SDIP48,.4	RECTANGULAR	IN-LINE, SHRINK PITCH	Obsolete	-	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	1.78 mm	not_compliant	-	-	R-XDIP-T48	Not Qualified	-	COMMERCIAL	-	2	ASYNCHRONOUS	-	2KX8	3-STATE	-	8	0.0015 A	16384 bit	MIL-STD-883 Class B (Modified)	PARALLEL	COMMON	MULTI-PORT SRAM	-	-	-	-
IDT7142LA35XC Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7143SA45GB Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX16, 45ns, CMOS, CPGA68, CERAMIC, PGA-68 Сборник данных Сравнение	Min.:1 Mult.:1	NO	68	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	PGA	CERAMIC, PGA-68	PGA68,11X11	SQUARE	GRID ARRAY	Obsolete	PGA	No	5 V	e0	-	3A001.A.2.C	TIN LEAD	AUTOMATIC POWER-DOWN	8542.32.00.41	PERPENDICULAR	PIN/PEG	-	1	2.54 mm	not_compliant	-	68	S-CPGA-P68	Not Qualified	5.5 V	MILITARY	4.5 V	2	ASYNCHRONOUS	0.33 mA	2KX16	3-STATE	3.683 mm	16	0.004 A	32768 bit	MIL-PRF-38535	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	YES	29.464 mm	29.464 mm
IDT7143SA45GB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7M134S70C Anlielectronics Тип	Integrated Device Technology Inc	Description: Multi-Port SRAM Module, 8KX8, 70ns, CMOS, CDIP58 Сборник данных Сравнение	Min.:1 Mult.:1	NO	58	70 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	70 °C	-	CERAMIC	DIP	-	DIP58,.6	RECTANGULAR	IN-LINE	Obsolete	-	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	2.54 mm	not_compliant	-	-	R-XDIP-T58	Not Qualified	-	COMMERCIAL	-	2	ASYNCHRONOUS	0.38 mA	8KX8	3-STATE	-	8	0.08 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM MODULE	4.5 V	-	-	-
IDT7M134S70C Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V3389S6PRFI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 64KX18, 6ns, CMOS, PQFP128, PLASTIC, TQFP-128 Сборник данных Сравнение	Min.:1 Mult.:1	YES	128	6 ns	83 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	PLASTIC, TQFP-128	QFP128,.63X.87,20	RECTANGULAR	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	Tin/Lead (Sn85Pb15)	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	8542.32.00.41	QUAD	GULL WING	225	1	0.5 mm	not_compliant	30	128	R-PQFP-G128	Not Qualified	3.45 V	INDUSTRIAL	3.15 V	2	SYNCHRONOUS	0.36 mA	64KX18	3-STATE	1.6 mm	18	0.03 A	1179648 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3.15 V	-	20 mm	14 mm
IDT70V3389S6PRFI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7130SA55PG Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 1KX8, 55ns, CMOS, PDIP48, GREEN, PLASTIC, DIP-48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	1024 words	1000	70 °C	-	PLASTIC/EPOXY	DIP	GREEN, PLASTIC, DIP-48	-	RECTANGULAR	IN-LINE	Obsolete	DIP	Yes	5 V	e3	-	EAR99	MATTE TIN	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	48	R-PDIP-T48	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	-	1KX8	-	5.08 mm	8	-	8192 bit	-	PARALLEL	-	MULTI-PORT SRAM	-	-	61.849 mm	15.24 mm
IDT7130SA55PG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70T3399S133BCG Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 Сборник данных Сравнение	Min.:1 Mult.:1	YES	256	4.2 ns	133 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	131072 words	128000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	LBGA	LBGA, BGA256,16X16,40	BGA256,16X16,40	SQUARE	GRID ARRAY, LOW PROFILE	Transferred	BGA	Yes	2.5 V	e1	Yes	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	260	1	1 mm	compliant	30	256	S-CBGA-B256	Not Qualified	2.6 V	COMMERCIAL	2.4 V	2	SYNCHRONOUS	0.37 mA	128KX18	3-STATE	1.7 mm	18	0.015 A	2359296 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2.4 V	-	17 mm	17 mm
IDT70T3399S133BCG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V9169L7PF Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 16KX9, 18ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	18 ns	83 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	16384 words	16000	70 °C	-	PLASTIC/EPOXY	LFQFP	14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	EAR99	Tin/Lead (Sn85Pb15)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	2	SYNCHRONOUS	0.28 mA	16KX9	3-STATE	1.6 mm	9	0.003 A	147456 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	14 mm	14 mm
IDT70V9169L7PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V9079L15PF Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 32KX8, 30ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	30 ns	40 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	32768 words	32000	70 °C	-	PLASTIC/EPOXY	LFQFP	14 X 14 MM, 1.40 MM HEIGHT, TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	EAR99	Tin/Lead (Sn85Pb15)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	2	SYNCHRONOUS	0.185 mA	32KX8	3-STATE	1.6 mm	8	0.003 A	262144 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	14 mm	14 mm
IDT70V9079L15PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70T659S10BFGI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 128KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM PITCH, GREEN, FBGA-208 Сборник данных Сравнение	Min.:1 Mult.:1	YES	208	10 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	LFBGA	15 X 15 MM, 1.40 MM PITCH, GREEN, FBGA-208	BGA208,17X17,32	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA	Yes	2.5 V	e1	Yes	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	-	8542.32.00.41	BOTTOM	BALL	260	1	0.8 mm	unknown	30	208	S-PBGA-B208	Not Qualified	2.6 V	INDUSTRIAL	2.4 V	2	ASYNCHRONOUS	0.445 mA	128KX36	3-STATE	1.5 mm	36	0.02 A	4718592 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2.4 V	-	15 mm	15 mm
IDT70T659S10BFGI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V27L25PFGI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 32KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	LFQFP,	-	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	Yes	3.3 V	e3	Yes	EAR99	Matte Tin (Sn)	-	8542.32.00.41	QUAD	GULL WING	NOT SPECIFIED	1	0.5 mm	compliant	NOT SPECIFIED	100	S-PQFP-G100	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	-	32KX16	-	1.6 mm	16	-	524288 bit	-	PARALLEL	-	MULTI-PORT SRAM	-	-	14 mm	14 mm
IDT70V27L25PFGI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V24L25PFGI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	LFQFP, QFP100,.63SQ,20	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Transferred	QFP	Yes	3.3 V	e3	Yes	EAR99	Matte Tin (Sn) - annealed	-	8542.32.00.41	QUAD	GULL WING	260	1	0.5 mm	compliant	30	100	S-PQFP-G100	Not Qualified	3.6 V	INDUSTRIAL	3 V	2	ASYNCHRONOUS	0.18 mA	4KX16	3-STATE	1.6 mm	16	0.0025 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	14 mm	14 mm
IDT70V24L25PFGI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7164S25E Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 25ns, CMOS, CDFP28, CERPACK-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	70 °C	-	CERAMIC, GLASS-SEALED	DFP	CERPACK-28	FL28,.4	RECTANGULAR	FLATPACK	Obsolete	DFP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	FLAT	-	1	1.27 mm	not_compliant	-	28	R-GDFP-F28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.17 mA	8KX8	3-STATE	2.921 mm	8	0.015 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	4.5 V	YES	18.288 mm	12.446 mm
IDT7164S25E Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7164L45L32 Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 45ns, CMOS, CQCC32, LCC-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-32	LCC32,.45X.55	RECTANGULAR	CHIP CARRIER	Obsolete	QFJ	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	32	R-CQCC-N32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.12 mA	8KX8	3-STATE	3.048 mm	8	0.00006 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	13.97 mm	11.43 mm
IDT7164L45L32 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: IDT83905AGLF,IDT7025L55PFB,IDT71321SA55L52,IDT70V9279S15PRF,IDT7198L85CB.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 6623 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)