| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип7134SA25JIAnlielectronics Тип | IDT |
IC SRAM 32K PARALLEL 52PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 52-LCC (J-Lead) | - | 52-PLCC (19.13x19.13) | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C ~ 85°C (TA) | Tube | -- | - | - | Obsolete | - | - | - | - | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Kb (4K x 8) | - | - | - | 25ns | SRAM | Parallel | - | - | - | - | 25ns | - | - | - | - | - | - | - | - | - | - | ||
| 7134SA25JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип7025S45PFI8Anlielectronics Тип | IDT |
IC SRAM 128K PARALLEL 100TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 100-LQFP | - | 100-TQFP (14x14) | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C ~ 85°C (TA) | Tape & Reel (TR) | -- | - | - | Obsolete | - | - | - | - | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | - | - | - | - | - | - | - | - | - | - | - | - | - | 128Kb (8K x 16) | - | - | - | 45ns | SRAM | Parallel | - | - | - | - | 45ns | - | - | - | - | - | - | - | - | - | - | ||
| 7025S45PFI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT8M624S60CBAnlielectronics Тип | Integrated Device Technology Inc |
Description: SRAM Module, 64KX16, 60ns, CMOS, CDMA40
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 40 | 60 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | - | DIP40,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | - | No | 5 V | - | - | - | e0 | - | - | 3A001.A.2.C | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | R-CDMA-T40 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | - | ASYNCHRONOUS | 0.34 mA | - | - | - | 64KX16 | 3-STATE | - | 16 | - | 0.08 A | 1048576 bit | MIL-STD-883 Class B (Modified) | PARALLEL | COMMON | SRAM MODULE | 4.5 V | - | - | - | ||
| IDT8M624S60CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67703S75PFAnlielectronics Тип | Integrated Device Technology Inc |
Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM, PLASTIC, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 100 | 7.5 ns | 117 MHz | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | - | - | - | e0 | - | - | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | - | - | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | - | SYNCHRONOUS | 0.265 mA | - | - | - | 256KX36 | 3-STATE | 1.6 mm | 36 | - | 0.05 A | 9437184 bit | - | PARALLEL | COMMON | CACHE SRAM | 3.14 V | - | 20 mm | 14 mm | ||
| 71V67703S75PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7005L35PFGIAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 8KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 64 | 35 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | Yes | 5 V | - | - | - | e3 | Yes | - | EAR99 | MATTE TIN | - | 8542.32.00.41 | - | - | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | 40 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | 2 | ASYNCHRONOUS | 0.25 mA | - | - | - | 8KX8 | 3-STATE | 1.6 mm | 8 | - | 0.004 A | 65536 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | - | 14 mm | 14 mm | ||
| IDT7005L35PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7198L45CBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 45ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, DIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 24 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, SIDE BRAZED, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | - | - | - | e0 | No | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 24 | R-CDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | 1 | ASYNCHRONOUS | 0.11 mA | - | - | - | 16KX4 | 3-STATE | 5.08 mm | 4 | - | 0.0006 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 30.607 mm | 7.62 mm | ||
| IDT7198L45CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT70V24S25JIAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 1 | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC84,1.2SQ | LDCC84,1.2SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 3.3 V | - | - | - | e0 | No | - | EAR99 | Tin/Lead (Sn85Pb15) | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | - | - | QUAD | J BEND | 225 | 1 | 2.54 mm | not_compliant | 30 | 84 | S-PQCC-J84 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | 2 | ASYNCHRONOUS | 0.19 mA | - | - | - | 4KX16 | 3-STATE | 4.572 mm | 16 | - | 0.005 A | 65536 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | - | 29.3116 mm | 29.3116 mm | ||
| IDT70V24S25JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V7288S25PFAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 64KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 100 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | LFQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | 3.3 V | - | - | - | e0 | - | - | EAR99 | Tin/Lead (Sn85Pb15) | - | 8542.32.00.41 | - | - | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 20 | 100 | S-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | 2 | ASYNCHRONOUS | 0.25 mA | - | - | - | 64KX16 | 3-STATE | 1.6 mm | 16 | - | 0.006 A | 1048576 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3.14 V | - | 14 mm | 14 mm | ||
| IDT70V7288S25PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71V2577S85PFAnlielectronics Тип | Integrated Device Technology Inc |
Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 100 | 8.5 ns | 86 MHz | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | LQFP | 14 X 20 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | - | - | - | e0 | - | - | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | - | - | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | - | SYNCHRONOUS | 0.18 mA | - | - | - | 128KX36 | 3-STATE | 1.6 mm | 36 | - | 0.03 A | 4718592 bit | - | PARALLEL | COMMON | CACHE SRAM | 3.14 V | - | 20 mm | 14 mm | ||
| IDT71V2577S85PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71321SA55PFGAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 64 | 55 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | Yes | 5 V | - | - | - | e3 | Yes | - | EAR99 | Matte Tin (Sn) - annealed | AUTOMATIC POWER DOWN | 8542.32.00.41 | - | - | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | 2 | ASYNCHRONOUS | 0.155 mA | - | - | - | 2KX8 | 3-STATE | 1.6 mm | 8 | - | 0.015 A | 16384 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | 14 mm | 14 mm | ||
| IDT71321SA55PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7198S35DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX4, 35ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 24 | 35 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | - | - | - | e0 | - | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | 1 | ASYNCHRONOUS | 0.14 mA | - | - | - | 16KX4 | 3-STATE | 5.08 mm | 4 | - | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 32.004 mm | 7.62 mm | ||
| IDT7198S35DB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип5962-8700206ZCAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 2KX8, 90ns, CMOS, CERAMIC, DIP-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | 90 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, | - | - | IN-LINE | Obsolete | DIP | - | 5 V | - | - | - | e0 | - | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | 48 | - | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | - | ASYNCHRONOUS | - | - | - | - | 2KX8 | - | - | 8 | - | - | 16384 bit | - | PARALLEL | - | MULTI-PORT SRAM | - | - | - | - | ||
| 5962-8700206ZC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT6198S25YAnlielectronics Тип | Integrated Device Technology Inc |
Description: Standard SRAM, 16KX4, 25ns, CMOS, PDSO24, 0.300 INCH, SOJ-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 24 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.300 INCH, SOJ-24 | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | - | - | - | e0 | - | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 30 | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | 1 | ASYNCHRONOUS | 0.125 mA | - | - | - | 16KX4 | 3-STATE | 3.76 mm | 4 | - | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 15.88 mm | 7.62 mm | ||
| IDT6198S25Y | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT6167SA70DAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX1, 70ns, CMOS, CDIP20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 20 | 70 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 70 °C | - | CERAMIC | DIP | - | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | - | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | - | 2.54 mm | not_compliant | - | - | R-XDIP-T20 | Not Qualified | - | COMMERCIAL | - | - | - | ASYNCHRONOUS | - | - | - | - | 16KX1 | 3-STATE | - | 1 | - | - | 16384 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | - | - | - | - | ||
| IDT6167SA70D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7187L55CBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 64KX1, 55ns, CMOS, CDIP22, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 22 | 55 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP22,.3 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | - | - | - | e0 | No | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 22 | R-CDIP-T22 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | 1 | ASYNCHRONOUS | 0.095 mA | - | - | - | 64KX1 | 3-STATE | 5.08 mm | 1 | - | 0.0006 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | SEPARATE | STANDARD SRAM | 2 V | NO | 27.432 mm | 7.62 mm | ||
| IDT7187L55CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7187L25DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 64KX1, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 22 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERAMIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | - | - | - | e0 | - | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 22 | R-GDIP-T22 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | 1 | ASYNCHRONOUS | 0.11 mA | - | - | - | 64KX1 | 3-STATE | 5.08 mm | 1 | - | 0.0006 A | 65536 bit | MIL-STD-883 Class B | PARALLEL | SEPARATE | STANDARD SRAM | 2 V | NO | 27.051 mm | 7.62 mm | ||
| IDT7187L25DB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT8M824S45CBAnlielectronics Тип | Integrated Device Technology Inc |
Description: SRAM Module, 128KX8, 45ns, CMOS, CDMA32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 32 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | - | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | - | No | 5 V | - | - | - | e0 | - | - | 3A001.A.2.C | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | R-CDMA-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | - | ASYNCHRONOUS | 0.265 mA | - | - | - | 128KX8 | 3-STATE | - | 8 | - | 0.08 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | SRAM MODULE | 4.5 V | - | - | - | ||
| IDT8M824S45CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70P257L55BYGI8Anlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 100 | 55 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100 | BGA100,10X10,20 | SQUARE | GRID ARRAY | Obsolete | BGA | Yes | 1.8 V | - | - | - | e1 | - | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | - | - | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 30 | 100 | S-PBGA-B100 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | - | 2 | ASYNCHRONOUS | 0.025 mA | - | - | - | 8KX16 | 3-STATE | - | 16 | - | 0.000008 A | 131072 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 1.7 V | - | - | - | ||
| IDT70P257L55BYGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7164L45L28Anlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 8KX8, 45ns, CMOS, CQCC28, LCC-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 28 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 8192 words | 8000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-28 | LCC28,.45SQ | SQUARE | CHIP CARRIER | Obsolete | QLCC | No | 5 V | - | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | - | - | QUAD | NO LEAD | - | 1 | 1.27 mm | not_compliant | - | 28 | S-CQCC-N28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | 1 | ASYNCHRONOUS | 0.12 mA | - | - | - | 8KX8 | 3-STATE | 2.54 mm | 8 | - | 0.00006 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 11.43 mm | 11.43 mm | ||
| IDT7164L45L28 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V3569S6DRIAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 16KX36, 6ns, CMOS, PQFP208, PLASTIC, QFP-208
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 208 | 6 ns | 83 MHz | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | FQFP | PLASTIC, QFP-208 | QFP208,1.2SQ,20 | SQUARE | FLATPACK, FINE PITCH | Obsolete | QFP | No | 3.3 V | - | - | - | e0 | No | - | 3A991.B.2.B | Tin/Lead (Sn/Pb) | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 8542.32.00.41 | - | - | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | not_compliant | NOT SPECIFIED | 208 | S-PQFP-G208 | Not Qualified | 3.45 V | INDUSTRIAL | 3.15 V | - | 2 | SYNCHRONOUS | 0.36 mA | - | - | - | 16KX36 | 3-STATE | 4.1 mm | 36 | - | 0.03 A | 589824 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | - | 28 mm | 28 mm | ||
| IDT70V3569S6DRI |
Индекс :
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