Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page33

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Length	Width
	Mfr. Тип IDT70V3399S133BFG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Сборник данных Сравнение	Min.:1 Mult.:1	YES	208	4.2 ns	133 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	131072 words	128000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	LFBGA	LFBGA, BGA208,17X17,32	BGA208,17X17,32	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Transferred	BGA	Yes	3.3 V	e1	Yes	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	260	1	0.8 mm	compliant	30	208	S-CBGA-B208	Not Qualified	3.45 V	COMMERCIAL	3.15 V	2	SYNCHRONOUS	0.4 mA	128KX18	3-STATE	1.7 mm	18	0.03 A	2359296 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3.15 V	-	15 mm	15 mm
IDT70V3399S133BFG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT8M624S60CB Anlielectronics Тип	Integrated Device Technology Inc	Description: SRAM Module, 64KX16, 60ns, CMOS, CDMA40 Сборник данных Сравнение	Min.:1 Mult.:1	NO	40	60 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	65536 words	64000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	-	DIP40,.6	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete	-	No	5 V	e0	-	3A001.A.2.C	TIN LEAD	TTL COMPATIBLE INPUTS/OUTPUTS	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	-	R-CDMA-T40	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	0.34 mA	64KX16	3-STATE	-	16	0.08 A	1048576 bit	MIL-STD-883 Class B (Modified)	PARALLEL	COMMON	SRAM MODULE	4.5 V	-	-	-
IDT8M624S60CB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7187L55CB Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 64KX1, 55ns, CMOS, CDIP22, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-22 Сборник данных Сравнение	Min.:1 Mult.:1	NO	22	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	65536 words	64000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	DIP, DIP22,.3	DIP22,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	22	R-CDIP-T22	Not Qualified	5.5 V	MILITARY	4.5 V	1	ASYNCHRONOUS	0.095 mA	64KX1	3-STATE	5.08 mm	1	0.0006 A	65536 bit	38535Q/M;38534H;883B	PARALLEL	SEPARATE	STANDARD SRAM	2 V	NO	27.432 mm	7.62 mm
IDT7187L55CB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT8M624S45CB Anlielectronics Тип	Integrated Device Technology Inc	Description: SRAM Module, 64KX16, 45ns, CMOS, CDMA40 Сборник данных Сравнение	Min.:1 Mult.:1	NO	40	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	65536 words	64000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	-	DIP40,.6	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete	-	No	5 V	e0	-	3A001.A.2.C	TIN LEAD	TTL COMPATIBLE INPUTS/OUTPUTS	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	-	R-CDMA-T40	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	0.34 mA	64KX16	3-STATE	-	16	0.08 A	1048576 bit	MIL-STD-883 Class B (Modified)	PARALLEL	COMMON	SRAM MODULE	4.5 V	-	-	-
IDT8M624S45CB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7130SA45L52 Anlielectronics Тип	Integrated Device Technology Inc	Description: Multi-Port SRAM, 1KX8, 45ns, CMOS, CQCC52, LCC-52 Сборник данных Сравнение	Min.:1 Mult.:1	YES	52	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	1024 words	1000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	QCCN, LCC52,.75SQ	LCC52,.75SQ	SQUARE	CHIP CARRIER	Obsolete	LCC	No	5 V	e0	No	EAR99	TIN LEAD	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	52	S-CQCC-N52	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.19 mA	1KX8	3-STATE	2.2098 mm	8	0.015 A	8192 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	YES	19.05 mm	19.05 mm
IDT7130SA45L52 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7005L20JB Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 8KX8, 20ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, PLASTIC, LCC-68 Сборник данных Сравнение	Min.:1 Mult.:1	YES	68	20 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	8192 words	8000	125 °C	-55 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC68,1.0SQ	LDCC68,1.0SQ	SQUARE	CHIP CARRIER	Transferred	LCC	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	QUAD	J BEND	225	1	1.27 mm	not_compliant	20	68	S-PQCC-J68	Not Qualified	5.5 V	MILITARY	4.5 V	2	ASYNCHRONOUS	0.32 mA	8KX8	3-STATE	4.572 mm	8	0.004 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	-	24.2062 mm	24.2062 mm
IDT7005L20JB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT8M824S45CB Anlielectronics Тип	Integrated Device Technology Inc	Description: SRAM Module, 128KX8, 45ns, CMOS, CDMA32 Сборник данных Сравнение	Min.:1 Mult.:1	NO	32	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	131072 words	128000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	-	DIP32,.6	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete	-	No	5 V	e0	-	3A001.A.2.C	TIN LEAD	TTL COMPATIBLE INPUTS/OUTPUTS	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	-	R-CDMA-T32	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	0.265 mA	128KX8	3-STATE	-	8	0.08 A	1048576 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	SRAM MODULE	4.5 V	-	-	-
IDT8M824S45CB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7005S20PFB Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 8KX8, 20ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 Сборник данных Сравнение	Min.:1 Mult.:1	YES	64	20 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	8192 words	8000	125 °C	-55 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP64,.66SQ,32	QFP64,.66SQ,32	SQUARE	FLATPACK, LOW PROFILE	Obsolete	QFP	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	QUAD	GULL WING	240	1	0.8 mm	not_compliant	30	64	S-PQFP-G64	Not Qualified	5.5 V	MILITARY	4.5 V	2	ASYNCHRONOUS	0.37 mA	8KX8	3-STATE	1.6 mm	8	0.03 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	-	14 mm	14 mm
IDT7005S20PFB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7165L35J Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 35ns, CMOS, PQCC32, PLASTIC, LCC-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	35 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	8192 words	8000	70 °C	-	PLASTIC/EPOXY	QCCJ	PLASTIC, LCC-32	LDCC32,.5X.6	RECTANGULAR	CHIP CARRIER	Obsolete	QFJ	No	5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	J BEND	225	1	1.27 mm	not_compliant	20	32	R-PQCC-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.13 mA	8KX8	3-STATE	3.55 mm	8	0.00006 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	13.97 mm	11.43 mm
IDT7165L35J Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7025L25PFB Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 8KX16, 25ns, CMOS, PQFP100, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	8192 words	8000	125 °C	-55 °C	PLASTIC/EPOXY	LFQFP	LFQFP,	-	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	5 V	e0	No	3A001.A.2.C	Tin/Lead (Sn85Pb15)	CONFIGURABLE AS 8K X 16	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	-	8KX16	-	1.6 mm	16	-	131072 bit	MIL-PRF-38535	PARALLEL	-	DUAL-PORT SRAM	-	-	14 mm	14 mm
IDT7025L25PFB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT6116SA120L32B Anlielectronics Тип	Integrated Device Technology Inc	Description: Standard SRAM, 2KX8, 120ns, CMOS, CQCC32, LCC-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	120 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-32	LCC32,.45X.55	RECTANGULAR	CHIP CARRIER	Obsolete	QFJ	No	5 V	e0	-	3A001.A.2.C	Tin/Lead (Sn/Pb)	-	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	32	R-CQCC-N32	Not Qualified	5.5 V	MILITARY	4.5 V	1	ASYNCHRONOUS	0.1 mA	2KX8	3-STATE	3.048 mm	8	0.01 A	16384 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	STANDARD SRAM	4.5 V	YES	13.97 mm	11.43 mm
IDT6116SA120L32B Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71V3548S133PF Anlielectronics Тип	Integrated Device Technology Inc	Description: ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	4.2 ns	133 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LQFP	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	-	3A991.B.2.A	Tin/Lead (Sn85Pb15)	PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	225	1	0.65 mm	not_compliant	20	100	R-PQFP-G100	Not Qualified	3.465 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.3 mA	256KX18	3-STATE	1.6 mm	18	0.04 A	4718592 bit	-	PARALLEL	COMMON	ZBT SRAM	3.14 V	-	20 mm	14 mm
IDT71V3548S133PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 70V3389S6BFG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 64KX18, 6ns, CMOS, CBGA208, 15 X 15 MM X 1.40 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Сборник данных Сравнение	Min.:1 Mult.:1	YES	208	6 ns	83 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	65536 words	64000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	TFBGA	TFBGA, BGA208,17X17,32	BGA208,17X17,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	Transferred	BGA	Yes	3.3 V	e1	Yes	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	8542.32.00.41	BOTTOM	BALL	260	1	0.8 mm	compliant	30	208	S-CBGA-B208	Not Qualified	3.45 V	COMMERCIAL	3.15 V	2	SYNCHRONOUS	0.31 mA	64KX18	3-STATE	1.2 mm	18	0.015 A	1179648 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3.15 V	-	15 mm	15 mm
70V3389S6BFG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7132SA90XCB Anlielectronics Тип	Integrated Device Technology Inc	Multi-Port SRAM, 2KX8, 90ns, CMOS, CDIP48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	90 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	125 °C	-55 °C	CERAMIC	SDIP	-	SDIP48,.4	RECTANGULAR	IN-LINE, SHRINK PITCH	Obsolete	-	No	5 V	e0	-	3A001.A.2.C	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	1.78 mm	not_compliant	-	-	R-XDIP-T48	Not Qualified	-	MILITARY	-	2	ASYNCHRONOUS	-	2KX8	3-STATE	-	8	0.03 A	16384 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	MULTI-PORT SRAM	-	-	-	-
IDT7132SA90XCB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71V546S117PFI Anlielectronics Тип	Integrated Device Technology Inc	Description: ZBT SRAM, 128KX36, 4.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	4.5 ns	117 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	14 X 20 MM, PLASTIC, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	Tin/Lead (Sn85Pb15)	-	8542.32.00.41	QUAD	GULL WING	225	1	0.65 mm	not_compliant	20	100	R-PQFP-G100	Not Qualified	3.465 V	INDUSTRIAL	3.135 V	-	SYNCHRONOUS	0.285 mA	128KX36	3-STATE	1.6 mm	36	0.045 A	4718592 bit	-	PARALLEL	COMMON	ZBT SRAM	3.14 V	-	20 mm	14 mm
IDT71V546S117PFI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V24L25PFG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	4096 words	4000	70 °C	-	PLASTIC/EPOXY	LFQFP	LFQFP, QFP100,.63SQ,20	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Transferred	QFP	Yes	3.3 V	e3	Yes	EAR99	Matte Tin (Sn) - annealed	-	8542.32.00.41	QUAD	GULL WING	260	1	0.5 mm	compliant	30	100	S-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	2	ASYNCHRONOUS	0.165 mA	4KX16	3-STATE	1.6 mm	16	0.0025 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	14 mm	14 mm
IDT70V24L25PFG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7130LA25JB Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 1KX8, 25ns, CMOS, PQCC52, PLASTIC, LCC-52 Сборник данных Сравнение	Min.:1 Mult.:1	YES	52	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	1024 words	1000	125 °C	-55 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC52,.8SQ	LDCC52,.8SQ	SQUARE	CHIP CARRIER	Transferred	LCC	No	5 V	e0	No	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	QUAD	J BEND	225	1	1.27 mm	not_compliant	20	52	S-PQCC-J52	Not Qualified	5.5 V	MILITARY	4.5 V	2	ASYNCHRONOUS	0.22 mA	1KX8	3-STATE	4.57 mm	8	0.004 A	8192 bit	MIL-PRF-38535	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	-	19.1262 mm	19.1262 mm
IDT7130LA25JB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V9089S7PF Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 64KX8, 18ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	18 ns	83 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	65536 words	64000	70 °C	-	PLASTIC/EPOXY	LFQFP	14 X 14 MM, 1.40 MM HEIGHT, TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Transferred	QFP	No	3.3 V	e0	No	3A991.B.2.B	Tin/Lead (Sn85Pb15)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	2	SYNCHRONOUS	0.335 mA	64KX8	3-STATE	1.6 mm	8	0.005 A	524288 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	14 mm	14 mm
IDT70V9089S7PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7006S45PF Anlielectronics Тип	Integrated Device Technology Inc	Multi-Port SRAM, 16KX8, 45ns, CMOS, PQFP64, PLASTIC, TQFP-64 Сборник данных Сравнение	Min.:1 Mult.:1	YES	64	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	16384 words	16000	70 °C	-	PLASTIC/EPOXY	LQFP	PLASTIC, TQFP-64	QFP64,.66SQ,32	SQUARE	FLATPACK, LOW PROFILE	Obsolete	QFP	No	5 V	e0	-	EAR99	TIN LEAD	INTERRUPT FLAG; ARBITER; SEMAPHORE	8542.32.00.41	QUAD	GULL WING	240	1	0.8 mm	not_compliant	30	64	S-PQFP-G64	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.34 mA	16KX8	3-STATE	1.6 mm	8	0.015 A	131072 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	YES	14 mm	14 mm
IDT7006S45PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7132LA25P Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX8, 25ns, CMOS, PDIP48, 0.550 X 2.430 INCH, 0.180 INCH HEIGHT, PLASTIC, DIP-48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	PLASTIC/EPOXY	DIP	0.550 X 2.430 INCH, 0.180 INCH HEIGHT, PLASTIC, DIP-48	DIP48,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	EAR99	Tin/Lead (Sn85Pb15)	BATTERY BACK UP	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	48	R-PDIP-T48	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.17 mA	2KX8	3-STATE	5.08 mm	8	0.0015 A	16384 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	-	61.849 mm	15.24 mm
IDT7132LA25P Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: IDT70V3399S133BFG,IDT8M624S60CB,IDT7187L55CB,IDT8M624S45CB,IDT7130SA45L52.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 6623 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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