Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page34

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Saturation Current	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Saturation Current	Length	Width
	Mfr. Тип IDT71V3576S166PF Anlielectronics Тип	Integrated Device Technology Inc	Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	3.5 ns	166 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	131072 words	128000	70 °C	-	PLASTIC/EPOXY	LQFP	14 X 20 MM, PLASTIC, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.A	Tin/Lead (Sn85Pb15)	ALSO REQUIRES 3.3V I/O SUPPLY	8542.32.00.41	QUAD	GULL WING	225	1	0.65 mm	not_compliant	20	100	R-PQFP-G100	Not Qualified	3.465 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.32 mA	128KX36	3-STATE	1.6 mm	36	0.02 A	4718592 bit	-	PARALLEL	COMMON	CACHE SRAM	3.14 V	-	-	20 mm	14 mm
IDT71V3576S166PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V25S20PFI Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 8KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	20 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	8192 words	8000	85 °C	-40 °C	PLASTIC/EPOXY	LFQFP	LFQFP, QFP100,.63SQ,20	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	EAR99	Tin/Lead (Sn85Pb15)	-	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	3.6 V	INDUSTRIAL	3 V	2	ASYNCHRONOUS	0.225 mA	8KX16	3-STATE	1.6 mm	16	0.015 A	131072 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	-	14 mm	14 mm
IDT70V25S20PFI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71256L55J Anlielectronics Тип	Integrated Device Technology Inc	Description: Standard SRAM, 32KX8, 55ns, CMOS, PQCC32, PLASTIC, LCC-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	32768 words	32000	70 °C	-	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6	RECTANGULAR	CHIP CARRIER	Obsolete	QFJ	No	5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	J BEND	225	1	1.27 mm	not_compliant	20	32	R-PQCC-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.105 mA	32KX8	3-STATE	3.55 mm	8	0.00012 A	262144 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	13.97 mm	11.43 mm
IDT71256L55J Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7164L30L28 Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 29ns, CMOS, CQCC28, LCC-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	29 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-28	LCC28,.45SQ	SQUARE	CHIP CARRIER	Obsolete	QLCC	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	28	S-CQCC-N28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA	8KX8	3-STATE	2.54 mm	8	0.00006 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	11.43 mm	11.43 mm
IDT7164L30L28 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7133LA35JI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX16, 35ns, CMOS, PQCC68, PLASTIC, LCC-68 Сборник данных Сравнение	Min.:1 Mult.:1	YES	68	35 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	2048 words	2000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	PLASTIC, LCC-68	LDCC68,1.0SQ	SQUARE	CHIP CARRIER	Obsolete	LCC	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	J BEND	225	1	1.27 mm	not_compliant	20	68	S-PQCC-J68	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	2	ASYNCHRONOUS	0.295 mA	2KX16	3-STATE	4.57 mm	16	0.004 A	32768 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	-	-	24.2062 mm	24.2062 mm
IDT7133LA35JI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7132SA55PG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX8, 55ns, CMOS, PDIP48, 0.550 X 2.430 INCH, 0.180 INCH HEIGHT, GREEN, PLASTIC, MS-011AD, DIP-48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	48	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP48,.6	DIP48,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	Yes	5 V	e3	Yes	EAR99	MATTE TIN	AUTOMATIC POWER DOWN	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	48	R-PDIP-T48	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.155 mA	2KX8	3-STATE	5.08 mm	8	0.015 A	16384 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	-	-	61.849 mm	15.24 mm
IDT7132SA55PG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT71256L20TP Anlielectronics Тип	Integrated Device Technology Inc	Description: Standard SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	20 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	32768 words	32000	70 °C	-	PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-28	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	EAR99	Tin/Lead (Sn85Pb15)	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.135 mA	32KX8	3-STATE	4.57 mm	8	0.00012 A	262144 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	34.67 mm	7.62 mm
IDT71256L20TP Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7142SA90L52 Anlielectronics Тип	Integrated Device Technology Inc	Multi-Port SRAM, 2KX8, 90ns, CMOS, CQCC52, LCC-52 Сборник данных Сравнение	Min.:1 Mult.:1	YES	52	90 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-52	LCC52,.75SQ	SQUARE	CHIP CARRIER	Obsolete	LCC	No	5 V	e0	No	EAR99	TIN LEAD	AUTOMATIC POWER-DOWN	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	52	S-CQCC-N52	Not Qualified	5.5 V	COMMERCIAL	4.5 V	2	ASYNCHRONOUS	0.18 mA	2KX8	3-STATE	2.2098 mm	8	0.015 A	16384 bit	MIL-STD-883 Class B (Modified)	PARALLEL	COMMON	MULTI-PORT SRAM	4.5 V	YES	-	19.05 mm	19.05 mm
IDT7142SA90L52 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7187L25DB Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 64KX1, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Сборник данных Сравнение	Min.:1 Mult.:1	NO	22	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	65536 words	64000	125 °C	-55 °C	CERAMIC, GLASS-SEALED	DIP	0.300 INCH, CERAMIC, DIP-22	DIP22,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	not_compliant	-	22	R-GDIP-T22	Not Qualified	5.5 V	MILITARY	4.5 V	1	ASYNCHRONOUS	0.11 mA	64KX1	3-STATE	5.08 mm	1	0.0006 A	65536 bit	MIL-STD-883 Class B	PARALLEL	SEPARATE	STANDARD SRAM	2 V	NO	-	27.051 mm	7.62 mm
IDT7187L25DB Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70P257L55BYGI8 Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	8192 words	8000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100	BGA100,10X10,20	SQUARE	GRID ARRAY	Obsolete	BGA	Yes	1.8 V	e1	-	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	-	8542.32.00.41	BOTTOM	BALL	260	1	0.5 mm	unknown	30	100	S-PBGA-B100	Not Qualified	1.9 V	INDUSTRIAL	1.7 V	2	ASYNCHRONOUS	0.025 mA	8KX16	3-STATE	-	16	0.000008 A	131072 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	1.7 V	-	-	-	-
IDT70P257L55BYGI8 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V3569S6DRI Anlielectronics Тип	Integrated Device Technology Inc	Description: Dual-Port SRAM, 16KX36, 6ns, CMOS, PQFP208, PLASTIC, QFP-208 Сборник данных Сравнение	Min.:1 Mult.:1	YES	208	6 ns	83 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	16384 words	16000	85 °C	-40 °C	PLASTIC/EPOXY	FQFP	PLASTIC, QFP-208	QFP208,1.2SQ,20	SQUARE	FLATPACK, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	8542.32.00.41	QUAD	GULL WING	NOT SPECIFIED	1	0.5 mm	not_compliant	NOT SPECIFIED	208	S-PQFP-G208	Not Qualified	3.45 V	INDUSTRIAL	3.15 V	2	SYNCHRONOUS	0.36 mA	16KX36	3-STATE	4.1 mm	36	0.03 A	589824 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3.15 V	-	-	28 mm	28 mm
IDT70V3569S6DRI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7164L45L28 Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 8KX8, 45ns, CMOS, CQCC28, LCC-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	45 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	8192 words	8000	70 °C	-	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-28	LCC28,.45SQ	SQUARE	CHIP CARRIER	Obsolete	QLCC	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	not_compliant	-	28	S-CQCC-N28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.12 mA	8KX8	3-STATE	2.54 mm	8	0.00006 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	11.43 mm	11.43 mm
IDT7164L45L28 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 5962-8700206ZC Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 2KX8, 90ns, CMOS, CERAMIC, DIP-48 Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	90 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	2048 words	2000	125 °C	-55 °C	CERAMIC, GLASS-SEALED	DIP	DIP,	-	-	IN-LINE	Obsolete	DIP	-	5 V	e0	-	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	-	unknown	-	48	-	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	-	2KX8	-	-	8	-	16384 bit	-	PARALLEL	-	MULTI-PORT SRAM	-	-	-	-	-
5962-8700206ZC Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT6198S25Y Anlielectronics Тип	Integrated Device Technology Inc	Description: Standard SRAM, 16KX4, 25ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	16384 words	16000	70 °C	-	PLASTIC/EPOXY	SOJ	0.300 INCH, SOJ-24	SOJ24,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	225	1	1.27 mm	not_compliant	30	24	R-PDSO-J24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.125 mA	16KX4	3-STATE	3.76 mm	4	0.015 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	4.5 V	YES	-	15.88 mm	7.62 mm
IDT6198S25Y Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70T3519S133BCG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Сборник данных Сравнение	Min.:1 Mult.:1	YES	256	15 ns	133 MHz	INTEGRATED DEVICE TECHNOLOGY INC	3	262144 words	256000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA256,16X16,40	BGA256,16X16,40	SQUARE	GRID ARRAY, LOW PROFILE	Transferred	BGA	Yes	2.5 V	e1	Yes	3A991.B.2.A	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED OR FLOW-THROUGH ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	260	1	1 mm	compliant	30	256	S-PBGA-B256	Not Qualified	2.6 V	COMMERCIAL	2.4 V	2	SYNCHRONOUS	0.37 mA	256KX36	3-STATE	1.7 mm	36	0.015 A	9437184 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2.4 V	-	-	17 mm	17 mm
IDT70T3519S133BCG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V27L35PFG Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 32KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	35 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	32768 words	32000	70 °C	-	PLASTIC/EPOXY	LFQFP	LFQFP, QFP100,.63SQ,20	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Transferred	QFP	Yes	3.3 V	e3	Yes	EAR99	Matte Tin (Sn) - annealed	-	8542.32.00.41	QUAD	GULL WING	260	1	0.5 mm	compliant	30	100	S-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3 V	2	ASYNCHRONOUS	0.19 mA	32KX16	3-STATE	1.6 mm	16	0.003 A	524288 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	-	14 mm	14 mm
IDT70V27L35PFG Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT6167SA70D Anlielectronics Тип	Integrated Device Technology Inc	Standard SRAM, 16KX1, 70ns, CMOS, CDIP20 Сборник данных Сравнение	Min.:1 Mult.:1	NO	20	70 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	16384 words	16000	70 °C	-	CERAMIC	DIP	-	DIP20,.3	RECTANGULAR	IN-LINE	Obsolete	-	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	2.54 mm	not_compliant	-	-	R-XDIP-T20	Not Qualified	-	COMMERCIAL	-	-	ASYNCHRONOUS	-	16KX1	3-STATE	-	1	-	16384 bit	-	PARALLEL	SEPARATE	STANDARD SRAM	-	-	-	-	-
IDT6167SA70D Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT7130LA55JG8 Anlielectronics Тип	Integrated Device Technology Inc	Multi-Port SRAM, 1KX8, 55ns, CMOS, PQCC52 Сборник данных Сравнение	Min.:1 Mult.:1	YES	52	55 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	-	1024 words	1000	70 °C	-	PLASTIC/EPOXY	QCCJ	-	LDCC52,.8SQ	SQUARE	CHIP CARRIER	Obsolete	-	Yes	5 V	e3	Yes	EAR99	Matte Tin (Sn) - annealed	-	8542.32.00.41	QUAD	J BEND	260	-	1.27 mm	unknown	30	-	S-PQCC-J52	Not Qualified	-	COMMERCIAL	-	2	ASYNCHRONOUS	0.11 mA	1KX8	3-STATE	-	8	0.0015 A	8192 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	-	1	-	-
IDT7130LA55JG8 Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V24S25JI Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	1	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC84,1.2SQ	LDCC84,1.2SQ	SQUARE	CHIP CARRIER	Obsolete	LCC	No	3.3 V	e0	No	EAR99	Tin/Lead (Sn85Pb15)	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	8542.32.00.41	QUAD	J BEND	225	1	2.54 mm	not_compliant	30	84	S-PQCC-J84	Not Qualified	3.6 V	INDUSTRIAL	3 V	2	ASYNCHRONOUS	0.19 mA	4KX16	3-STATE	4.572 mm	16	0.005 A	65536 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3 V	-	-	29.3116 mm	29.3116 mm
IDT70V24S25JI Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IDT70V7288S25PF Anlielectronics Тип	Integrated Device Technology Inc	Dual-Port SRAM, 64KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	25 ns	-	INTEGRATED DEVICE TECHNOLOGY INC	3	65536 words	64000	70 °C	-	PLASTIC/EPOXY	LFQFP	14 X 14 MM, 1.40 MM HEIGHT, TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn85Pb15)	-	8542.32.00.41	QUAD	GULL WING	240	1	0.5 mm	not_compliant	20	100	S-PQFP-G100	Not Qualified	3.465 V	COMMERCIAL	3.135 V	2	ASYNCHRONOUS	0.25 mA	64KX16	3-STATE	1.6 mm	16	0.006 A	1048576 bit	-	PARALLEL	COMMON	MULTI-PORT SRAM	3.14 V	-	-	14 mm	14 mm
IDT70V7288S25PF Integrated Device Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: IDT71V3576S166PF,IDT70V25S20PFI,IDT71256L55J,IDT7164L30L28,IDT7133LA35JI.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 6623 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)