| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Frequency(Max) | Ihs Manufacturer | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Output Enable | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIDT71V2577S85PFAnlielectronics Тип | Integrated Device Technology Inc |
Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 100 | 8.5 ns | 86 MHz | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | LQFP | 14 X 20 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | - | - | e0 | - | - | - | - | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | - | - | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | - | 0.65 mm | not_compliant | - | 20 | 100 | R-PQFP-G100 | Not Qualified | - | 3.465 V | - | COMMERCIAL | 3.135 V | - | - | - | - | - | - | SYNCHRONOUS | - | 0.18 mA | - | 128KX36 | 3-STATE | 1.6 mm | 36 | - | - | 0.03 A | 4718592 bit | - | PARALLEL | COMMON | - | - | CACHE SRAM | 3.14 V | - | - | 20 mm | 14 mm | - | - | - | - | ||
| IDT71V2577S85PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71321SA55PFGAnlielectronics Тип | Integrated Device Technology Inc |
Description: Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 64 | 55 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | Yes | 5 V | - | - | e3 | Yes | - | - | - | EAR99 | Matte Tin (Sn) - annealed | - | - | AUTOMATIC POWER DOWN | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | - | 0.8 mm | compliant | - | 30 | 64 | S-PQFP-G64 | Not Qualified | - | 5.5 V | - | COMMERCIAL | 4.5 V | - | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.155 mA | - | 2KX8 | 3-STATE | 1.6 mm | 8 | - | - | 0.015 A | 16384 bit | - | PARALLEL | COMMON | - | - | MULTI-PORT SRAM | 4.5 V | - | - | 14 mm | 14 mm | - | - | - | - | ||
| IDT71321SA55PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71256S25L32BAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 32KX8, 25ns, CMOS, CQCC32, LCC-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 32 | 25 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-32 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | - | - | e0 | - | - | - | - | 3A001.A.2.C | TIN LEAD | - | - | - | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | - | 1.27 mm | not_compliant | - | - | 32 | R-CQCC-N32 | Not Qualified | - | 5.5 V | - | MILITARY | 4.5 V | - | - | - | - | 1 | - | ASYNCHRONOUS | - | 0.15 mA | - | 32KX8 | 3-STATE | 3.048 mm | 8 | - | - | 0.02 A | 262144 bit | MIL-STD-883 Class B | PARALLEL | COMMON | - | - | STANDARD SRAM | 4.5 V | YES | - | 13.97 mm | 11.43 mm | - | - | - | - | ||
| IDT71256S25L32B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип71V67703S75PFAnlielectronics Тип | Integrated Device Technology Inc |
Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM, PLASTIC, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 100 | 7.5 ns | 117 MHz | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | - | - | e0 | - | - | - | - | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | - | - | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | - | 0.65 mm | not_compliant | - | 20 | 100 | R-PQFP-G100 | Not Qualified | - | 3.465 V | - | COMMERCIAL | 3.135 V | - | - | - | - | - | - | SYNCHRONOUS | - | 0.265 mA | - | 256KX36 | 3-STATE | 1.6 mm | 36 | - | - | 0.05 A | 9437184 bit | - | PARALLEL | COMMON | - | - | CACHE SRAM | 3.14 V | - | - | 20 mm | 14 mm | - | - | - | - | ||
| 71V67703S75PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71V321L35TFIAnlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 64 | 35 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | - | QFP64,.47SQ,20 | SQUARE | FLATPACK | Obsolete | - | No | 3.3 V | - | - | e0 | No | - | - | - | EAR99 | Tin/Lead (Sn85Pb15) | - | - | - | 8542.32.00.41 | QUAD | GULL WING | 240 | - | - | 0.5 mm | not_compliant | - | 30 | - | S-PQFP-G64 | Not Qualified | - | - | - | INDUSTRIAL | - | - | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.095 mA | - | 2KX8 | 3-STATE | - | 8 | - | - | 0.004 A | 16384 bit | - | PARALLEL | COMMON | - | - | MULTI-PORT SRAM | 2 V | - | - | - | - | - | - | - | - | ||
| IDT71V321L35TFI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7026L20GBAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 16KX16, 20ns, CMOS, CPGA84, CERAMIC, PGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | 84 | 20 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA, PGA84M,11X11 | PGA84M,11X11 | SQUARE | GRID ARRAY | Transferred | PGA | No | 5 V | - | - | e0 | No | - | - | - | 3A001.A.2.C | TIN LEAD | - | - | 16K X 16 DUAL PORT SRAM | 8542.32.00.41 | PERPENDICULAR | PIN/PEG | - | 1 | - | 2.54 mm | not_compliant | - | - | 84 | S-CPGA-P84 | Not Qualified | - | 5.5 V | - | MILITARY | 4.5 V | - | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.315 mA | - | 16KX16 | 3-STATE | 5.207 mm | 16 | - | - | 0.01 A | 262144 bit | MIL-PRF-38535 | PARALLEL | COMMON | - | - | MULTI-PORT SRAM | 4.5 V | - | - | 27.94 mm | 27.94 mm | - | - | - | - | ||
| IDT7026L20GB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7MMV4101S12BGIAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 128KX24, 12ns, CMOS, PBGA119, PLASTIC, BGA-119
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 119 | 12 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | PLASTIC, BGA-119 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | No | 3.3 V | - | - | e0 | - | - | - | - | 3A991.B.2.A | TIN LEAD | - | - | - | 8542.32.00.41 | BOTTOM | BALL | 225 | 1 | - | 1.27 mm | not_compliant | - | 20 | 119 | R-PBGA-B119 | Not Qualified | - | 3.6 V | - | INDUSTRIAL | 3 V | - | - | - | - | - | - | ASYNCHRONOUS | - | 0.275 mA | - | 128KX24 | 3-STATE | 2.36 mm | 24 | - | - | 0.01 A | 3145728 bit | - | PARALLEL | COMMON | - | - | STANDARD SRAM | 3 V | - | - | 22 mm | 14 mm | - | - | - | - | ||
| IDT7MMV4101S12BGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT6116SA20PGIAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 2KX8, 19ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | 24 | 19 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-24 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | - | 2.54 mm | unknown | - | - | 24 | R-PDIP-T24 | Not Qualified | - | 5.5 V | - | INDUSTRIAL | 4.5 V | - | - | - | - | - | - | ASYNCHRONOUS | - | 0.105 mA | - | 2KX8 | 3-STATE | 4.699 mm | 8 | - | - | 0.002 A | 16384 bit | - | PARALLEL | COMMON | - | - | STANDARD SRAM | 4.5 V | - | - | 31.75 mm | 15.24 mm | - | - | - | - | ||
| IDT6116SA20PGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT70V7288L25PFAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 64KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | 100 | 25 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 3 | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | LFQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | 3.3 V | - | - | e0 | - | - | - | - | EAR99 | Tin/Lead (Sn85Pb15) | - | - | - | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | - | 0.5 mm | not_compliant | - | 20 | 100 | S-PQFP-G100 | Not Qualified | - | 3.465 V | - | COMMERCIAL | 3.135 V | - | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.2 mA | - | 64KX16 | 3-STATE | 1.6 mm | 16 | - | - | 0.003 A | 1048576 bit | - | PARALLEL | COMMON | - | - | MULTI-PORT SRAM | 3.14 V | - | - | 14 mm | 14 mm | - | - | - | - | ||
| IDT70V7288L25PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7198L20DAnlielectronics Тип | Integrated Device Technology Inc |
Description: Standard SRAM, 16KX4, 19ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | 24 | 19 ns | - | - | INTEGRATED DEVICE TECHNOLOGY INC | - | - | 16384 words | 16000 | 70 °C | - | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | - | - | e0 | No | - | - | - | EAR99 | TIN LEAD | - | - | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | - | 2.54 mm | not_compliant | - | - | 24 | R-GDIP-T24 | Not Qualified | - | 5.5 V | - | COMMERCIAL | 4.5 V | - | - | - | - | 1 | - | ASYNCHRONOUS | - | 0.115 mA | - | 16KX4 | 3-STATE | 5.08 mm | 4 | - | - | 0.00015 A | 65536 bit | - | PARALLEL | COMMON | - | - | STANDARD SRAM | 2 V | YES | - | 32.004 mm | 7.62 mm | - | - | - | - | ||
| IDT7198L20D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71124S12YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 32 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 128kB | 1 | 160mA | - | - | - | 12 ns | - | 3-STATE | - | - | 17b | 1 Mb | - | - | - | - | COMMON | Asynchronous | 8b | - | - | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71124S12YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA12TYGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 32 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | - | - | - | 12 ns | - | 3-STATE | - | - | 17b | 1 Mb | - | - | - | - | COMMON | Asynchronous | 8b | - | 3V | - | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA12TYG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA10PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3.15V | 128kB | 1 | - | - | - | - | 10 ns | - | 3-STATE | - | - | 16b | 1 Mb | - | - | - | - | COMMON | Asynchronous | 16b | - | - | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA10PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L15PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | Not Qualified | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 145mA | - | - | - | 15 ns | - | 3-STATE | - | - | 19b | 4 Mb | - | - | - | - | COMMON | Asynchronous | 8b | - | 3V | - | - | 18.41mm | 10.16mm | 1mm | - | RoHS Compliant | Lead Free | ||
| 71V424L15PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA15YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 15ns 28-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | - | - | 28 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 28 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 32kB | 1 | 150mA | - | 150mA | - | 15 ns | 32KX8 | 3-STATE | - | - | 15b | 256 kb | - | - | - | - | COMMON | Asynchronous | 8b | - | - | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256SA15YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L12PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 155mA | - | - | - | 12 ns | - | 3-STATE | - | - | 19b | 4 Mb | - | - | - | - | COMMON | Asynchronous | 8b | - | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V424L12PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA25YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 25ns 28-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 28 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 28 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 32kB | 1 | 145mA | - | - | - | 25 ns | 32KX8 | 3-STATE | - | - | 15b | 256 kb | - | - | - | - | COMMON | Asynchronous | 8b | - | - | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256SA25YG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S12YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin SOJ Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | - | - | - | - | RAM, SDR, SRAM - Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 44 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 128kB | 1 | 210mA | - | - | - | 12 ns | - | 3-STATE | - | - | 16b | 1 Mb | - | - | - | - | COMMON | Asynchronous | 16b | - | - | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71016S12YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65603S150BQGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 165 | - | - | - | 150MHz | - | RAM, SDR, SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2005 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | 150MHz | 30 | 165 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 345mA | - | - | - | 6.7 ns | 256KX36 | 3-STATE | - | - | 18b | 9 Mb | 0.06A | - | - | - | COMMON | Synchronous | 36b | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V65603S150BQGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V27L15PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx16 3.3V DUAL- PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | - | - | - | - | RAM, SDR, SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | 2008 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | - | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 64kB | 2 | 225mA | - | - | - | 15 ns | - | 3-STATE | - | - | 30b | 512 kb | 0.003A | - | - | - | COMMON | Asynchronous | 16b | - | 3V | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V27L15PFG |
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