| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V124SA15YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | 15 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 160mA | 12 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V24S55PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 64K-Bit 4K x 16 55ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | SDR | Bulk | 2004 | e3 | yes | Active | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.5mm | - | 30 | 100 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 180mA | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V24S55PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V256SA20PZGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 20ns 28-Pin TSOP-I
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TSSOP | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2001 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.55mm | - | 30 | 28 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 32kB | 1 | 85mA | 20 ns | 32KX8 | - | 15b | 256 kb | - | - | Asynchronous | 8b | - | - | 8mm | 11.8mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V256SA20PZG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S200BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 200MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 200MHz | - | 119 | 2.5V | - | COMMERCIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 275mA | 3.2 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75802S200BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L12YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 44 | - | MATTE TIN | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 170mA | 12 ns | - | 3-STATE | 18b | 4 Mb | - | COMMON | Asynchronous | 16b | 3V | - | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V416L12YG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA15YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 15ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | 15 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA15YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S15PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | GULL WING | 260 | 1 | 5V | 0.8mm | - | 30 | 44 | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 180mA | 15 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71016S15PHGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71024S20YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 20ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 32 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 140mA | 20 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71024S20YG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256SA12YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | YES | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 28 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 32kB | 1 | - | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | - | COMMON | - | - | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256SA12YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L10PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | 10 ns | - | 3-STATE | 18b | 4 Mb | - | COMMON | Asynchronous | 16b | 3V | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416L10PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65803S100PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | BURST COUNTER | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 250mA | 10 ns | - | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V65803S100PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3509MS133BPIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 1024Kx36 STD-PWR 2.5V DUAL PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Surface Mount | BGA | - | 256 | 133MHz | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | 133MHz | 20 | 256 | 2.5V | - | INDUSTRIAL | Parallel | 2.6V | 2.4V | 4.5MB | 2 | 1.37A | 4.2 ns | 1MX36 | 3-STATE | 40b | 36 Mb | 0.08A | COMMON | Synchronous | 36b | - | - | 17mm | 17mm | 1.76mm | No | RoHS Compliant | Contains Lead | ||
| 70T3509MS133BPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75602S133BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 4.2ns 119-Pin BGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2012 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | - | 133MHz | - | 119 | 2.5V | - | COMMERCIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 195mA | 4.2 ns | - | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71T75602S133BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424S15PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 160mA | 15 ns | - | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V424S15PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S166PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 3.5ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 166MHz | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 166MHz | 30 | 100 | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | 3.5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S166PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65703S80PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 8ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH | QUAD | GULL WING | 260 | 1 | 3.3V | - | 95MHz | 30 | 100 | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 60mA | 8 ns | 256KX36 | - | 18b | 9 Mb | - | - | Synchronous | 36b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V65703S80PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S133PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 4.2ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 133MHz | 30 | 100 | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 215mA | 4.2 ns | - | 3-STATE | 20b | 18 Mb | 0.06A | COMMON | Synchronous | 18b | 2.38V | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75802S133PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | 15 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15YGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA20YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | 20 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA20YG |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ