| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V65803S133BQIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 4.2ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 165 | 133MHz | RAM, SDR, SRAM | - | 2005 | e0 | no | Active | 3 (168 Hours) | 165 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 133MHz | 20 | 165 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 320mA | - | 7.5 ns | - | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
| 71V65803S133BQI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3558S166PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 3.5ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 166MHz | RAM, SDR, SRAM | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 166MHz | 30 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | - | 3.5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3558S166PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67602S150PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | TQFP | YES | 100 | 150MHz | RAM, SDR, SRAM | - | 2004 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 150MHz | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | - | 0.325mA | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | COMMON | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V67602S150PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75902S85BGGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 8.5ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | 2005 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 2.5V | - | 91MHz | 30 | 119 | - | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 225mA | - | 8.5 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71T75902S85BGG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S133PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 4.2ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 133MHz | RAM, SDR, SRAM | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 133MHz | 30 | 100 | - | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 215mA | - | 4.2 ns | - | 3-STATE | 20b | 18 Mb | 0.06A | COMMON | Synchronous | 18b | 2.38V | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75802S133PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65703S80PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 8ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH | QUAD | GULL WING | 260 | 1 | 3.3V | - | 95MHz | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 60mA | - | 8 ns | 256KX36 | - | 18b | 9 Mb | - | - | Synchronous | 36b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V65703S80PFGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA20YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | - | 20 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA20YG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BQGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 165-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | YES | 165 | 133MHz | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 3.3V | - | 133MHz | 30 | 165 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | - | 0.28mA | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | COMMON | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V67603S133BQGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | - | 15 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15YGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71124S15YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 32 | - | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 155mA | - | 15 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | - | 3.683mm | 20.9mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71124S15YGI8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7164L20YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 28 | - | 5V | 5V | INDUSTRIAL | Parallel | 5.5V | 4.5V | 8kB | 1 | 100mA | - | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 7164L20YGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 44 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 150mA | - | 12 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12YG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L15BEG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | TFBGA | YES | 48 | - | RAM, SDR, SRAM - Asynchronous | - | 2012 | e1 | yes | Active | 3 (168 Hours) | 48 | - | TIN SILVER COPPER | 70°C | 0°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.75mm | - | NOT SPECIFIED | 48 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | - | - | 15 ns | - | 3-STATE | 18b | 4 Mb | - | COMMON | - | - | 3V | - | 9mm | 9mm | 1.2mm | - | RoHS Compliant | Lead Free | ||
| 71V416L15BEG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S200PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 2.5V CORE ZBT X18 18M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 200MHz | RAM, SDR, SRAM | - | 2012 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 200MHz | 30 | 100 | - | 2.5V | - | COMMERCIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 275mA | - | 3.2 ns | - | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75802S200PFG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V65603S100PFG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 5ns 100-Pin TQFP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2007 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED ARCHITECTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 250mA | - | 10 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V65603S100PFG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S20PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 5V | 0.8mm | - | 30 | 44 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 170mA | - | 20 ns | - | 3-STATE | 16b | 1 Mb | - | COMMON | Asynchronous | 16b | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71016S20PHG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V2556SA133BGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M X36 2.5V I/O SLOW ZBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2011 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 133MHz | 20 | 119 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 310mA | - | 4.2 ns | - | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V2556SA133BGI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3577S75BQAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 4.5MBIT 7.5NS 165CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | FBGA | - | 165 | - | RAM, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 165 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 117MHz | 20 | 165 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | - | 1 | 255mA | - | 7.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
| 71V3577S75BQ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7130LA20JG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 8K-Bit 1K x 8 20ns 52-Pin PLCC T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 52 | - | RAM, SDR, SRAM | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | QUAD | J BEND | 260 | 1 | 5V | - | - | - | 52 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 1kB | 2 | 200mA | - | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 4.57mm | 19mm | 19mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7130LA20JG8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA12PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | SOIC | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | - | - | 30 | 32 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 128kB | 1 | 130mA | - | 12 ns | - | 3-STATE | 17b | 1 Mb | - | COMMON | Asynchronous | 8b | 3V | - | 20.95mm | 10.16mm | 1mm | - | RoHS Compliant | Lead Free | ||
| 71V124SA12PHG8 |
Индекс :
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